< IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .............….......................… 9 0 0 A* Collector-emitter voltage V CES ......................… 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 °C ●Flat base Type ●Copper base plate (non-plating) ●Tin plating pin terminals ●RoHS Directive compliant ●Recognized under UL1557, File E323585 Dual (Half-Bridge) *. DC current rating is limited by power terminals. APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION TERMINAL Dimension in mm SECTION A INTERNAL CONNECTION Tolerance otherwise specified Division of Dimension Es1 G1 (62) (61) Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 C1 (1) TH2 (57) TH1 Cs1 (56) (52) Es2 G2 Cs2 (47) (46) (42) Th NTC C1 (2) The tolerance of size between terminals is assumed to be ±0.4. E2 (3) E2 (4) t=0.8 Publication Date : October 2011 1 Tr1 Di1 Tr2 Di2 C2E1 (33) C2E1 (32) < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/FWDi Symbol Item VCES Collector-emitter voltage VGES Gate-emitter voltage IC Ptot IE IERM (Note.1) TC=25 °C V ± 20 V 900 * (Note.3) 2000 (Note.2, 4) DC, TC=25 °C Emitter current Unit 1200 (Note.2, 4) Pulse, Repetitive Total power dissipation (Note.1) Rating C-E short-circuited DC, TC=124 °C Collector current ICRM Conditions G-E short-circuited 7500 (Note.2, 4) W 900 * (Note.3) Pulse, Repetitive A A 2000 MODULE Symbol Item Conditions Rating Unit Tjmax Maximum junction temperature - 175 TCmax Maximum case temperature (Note.2) 125 Tjop Operating junction temperature - -40 ~ +150 Tstg Storage temperature - -40 ~ +125 Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min °C 2500 °C V ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/FWDi Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=100 mA, VCE=10 V 5.4 6.0 6.6 V T j =25 °C - 1.85 2.30 T j =125 °C - 2.05 - T j =150 °C - 2.10 - T j =25 °C - 1.70 2.15 VGE=15 V, T j =125 °C - 1.90 - (Chip) T j =150 °C - 1.95 - - - 100 IC=1000 A (Note.5) , VGE=15 V, VCEsat Collector-emitter saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time (Terminal) IC=1000 A (Note.1) Emitter-collector voltage , VCE=10 V, G-E short-circuited VCC=600 V, IC=1000 A, VGE=15 V VCC=600 V, IC=1000 A, VGE=±15 V, RG=0 Ω, Inductive load - - 20 - - 1.7 - 2300 - - - 800 - - 200 - - 600 - - 300 T j =25 °C - 1.85 2.30 G-E short-circuited, T j =125 °C - 1.85 - (Terminal) T j =150 °C - 1.85 - IE=1000 A VEC (Note.5) IE=1000 A (Note.5) (Note.5) , T j =25 °C - 1.70 2.15 G-E short-circuited, , T j =125 °C - 1.70 - (Chip) T j =150 °C - 1.70 - V V nF nC ns V V trr (Note.1) Reverse recovery time VCC=600 V, IE=1000 A, VGE=±15 V, - - 300 ns Qrr (Note.1) Reverse recovery charge RG=0 Ω, Inductive load - 53.3 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=1000 A, - 45.6 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, T j =150 °C, - 97.1 - Reverse recovery energy per pulse Inductive load - 96.7 - mJ - - 0.5 mΩ - 2.0 - Ω Err (Note.1) R CC'+EE' Internal lead resistance rg Internal gate resistance Main terminals-chip, per switch, TC=25 °C (Note.2) Per switch Publication Date : October 2011 2 mJ < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified) NTC THERMISTOR PART Symbol Item Limits Conditions (Note.2) R25 Zero-power resistance TC=25 °C ΔR/R Deviation of resistance TC=100 °C, R100=493 Ω B(25/50) B-constant Approximate by equation P25 Power dissipation TC=25 °C (Note.6) (Note.2) Max. Unit Min. Typ. 4.85 5.00 5.15 kΩ -7.3 - +7.8 % - 3375 - K - - 10 mW THERMAL RESISTANCE CHARACTERISTICS Symbol Item Rth(j-c)Q Thermal resistance Rth(j-c)D Rth(c-s) Limits Conditions (Note.2) (Note.2) Contact thermal resistance Min. Typ. Max. Unit Junction to case, per Inverter IGBT - - 20 K/kW Junction to case, per Inverter FWDi - - 38 K/kW - 7 - K/kW Case to heat sink, per 1 module, Thermal grease applied (Note.7) MECHANICAL CHARACTERISTICS Symbol Item Mt Mounting torque Ms ds Creepage distance da Clearance m Weight ec Limits Conditions Main terminals M 6 screw Mounting to heat sink M 5 screw Typ. Max. 3.5 4.0 4.5 N·m N·m 2.5 3.0 3.5 Terminal to terminal 13.2 - - Terminal to base plate 15.3 - - mm Terminal to terminal 13.2 - - Terminal to base plate 14.8 - - - 690 - g ±0 - +100 μm - Flatness of base plate Unit Min. On the centerline X, Y (Note.8) mm Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 2. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. The heat sink thermal resistance should measure just under the chips. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Junction temperature (T j ) should not increase beyond T j m a x rating. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit. R 1 1 6. B ( 25 / 50) ln( 25 ) /( ) R 50 T25 T50 -: Concave +: Convex R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K] 7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 8. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. X Y mounting side mounting side -: Concave Label side mounting side +: Convex Publication Date : October 2011 3 < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE Note9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "M2.6×10 or M2.6×12 self tapping screw" The length of the screw depends on the thickness of the PCB. *. DC current rating is limited by power terminals. RECOMMENDED OPERATING CONDITIONS (T a =25 °C) Symbol Item Conditions VCC (DC) Supply voltage Applied across C1-E2 VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 RG External gate resistance Per switch CHIP LOCATION (Top view) Limits Min. Typ. Max. Unit - 600 850 V 13.5 15.0 16.5 V 0 - 5.1 Ω Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor Publication Date : October 2011 4 < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS 1/2 52 VGE=15 V Shortcircuited IC 61 Shortcircuited Shortcircuited Es1 32/33 42 VGE =15 V 3/4 47 Tr1 IE Es1 32/33 42 Shortcircuited 3/4 IE E2 Es2 V Di1 Di2 V C E s a t test circuit VEC test circuit ～ vGE iE 90 % 0V Q rr =0.5×I rr ×t r r iE 0 t Load t rr IE + VCC iC 0A ～ -VGE C2/E1 Cs2 G2 47 Tr2 C1 Cs1 G1 46 E2 Es2 V Shortcircuited IC G2 Shortcircuited 62 V C2/E1 Cs2 46 1/2 52 61 G1 62 V C1 Cs1 t 90 % +V GE 0V RG Irr vGE vCE iC -V GE 10% 0A tr t d( on ) tf t d ( of f ) t Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE vCE 0 iC iC ICM VCC 0.1×ICM 0.1×VCC ICM VCC t 0.5×I r r 0 0.1×VCC IEM vEC vCE 0.02×ICM ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t VCC 0A t 0V t ti FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) Publication Date : October 2011 5 < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) T j =25 °C VGE=15 V (Chip) 2000 (Chip) 3.5 VGE=20 V 13.5 V 1800 12 V 15 V T j =150 °C 3.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (A) 1600 1400 11 V 1200 1000 800 10 V 600 9V 400 T j =125 °C 2.5 2.0 T j =25 °C 1.5 1.0 0.5 200 0 0.0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 10 0 200 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 °C 600 800 1000 1200 1400 1600 1800 2000 IC (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) 10 (Chip) 10000 T j =125 °C IC=2000 A 8 IE (A) IC=1000 A 6 EMITTER CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 400 COLLECTOR CURRENT IC=400 A 4 1000 T j =150 °C 100 2 T j =25 °C 0 10 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 18 20 0.0 VGE (V) 0.5 1.0 1.5 2.0 EMITTER-COLLECTOR VOLTAGE Publication Date : October 2011 6 2.5 VEC (V) 3.0 < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC=1000 A, VGE=±15 V, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 10000 1000 td(off) td(off) 100 WITCHING TIME 1000 td(on) tr tr 10 100 100 10 10 100 COLLECTOR CURRENT 0.1 1000 IC (A) 1 10 EXTERNAL GATE RESISTANCE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC/IE=1000 A, VGE=±15 V, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100 1000 SWITCHING ENERGY Eon, Eoff (mJ) SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) t d ( o f f ) , t f (ns) tf 100 Err Eoff 10 Eon 1 10000 Eon 100 1000 Eoff 10 100 Err 1 10 100 1000 0.1 1 EXTERNAL GATE RESISTANCE COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) Publication Date : October 2011 7 10 100 10 RG (Ω) REVERSE RECOVERY ENERGY Err (mJ) SWITCHING TIME (ns) tf SWITCHING TIME t d ( o n ) , t r (ns) td(on) < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 °C 1000 1000 Irr Cies 100 t r r (ns), I r r (A) CAPACITANCE (nF) trr 10 Coes 1 Cres 0.1 10 0.1 1 10 COLLECTOR-EMITTER VOLTAGE 100 10 VCE (V) 1000 IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) VCC=600 V, IC=1000 A, T j =25 °C Single pulse, TC=25°C R t h ( j - c ) Q =20 K/kW, R t h ( j - c ) D =38 K/kW Zth(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE VGE (V) GATE-EMITTER VOLTAGE 100 EMITTER CURRENT 20 15 10 5 0 0 100 500 1000 1500 2000 GATE CHARGE 2500 3000 3500 QG (nC) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 TIME (S) Publication Date : October 2011 8 0.1 1 10 < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! 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