MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
- MPD series using 5th Generation IGBT and FWDi -
CM1000DUC-34NF
●I C ….………………….….. 1000 A
●V CES ……………..…...….. 1700 V
●Flat base Type
●Copper (non-plating) base plate
●RoHS Directive compliant
Dual switch (Half-Bridge)
●UL Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension
Tolerance
0.5
to
3
±0.2
over
3
to
6
±0.3
over
6
to
30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
G2
E2
(Es2)
1
C2E1
C2
(Cs2)
C1
(Cs1)
Di1
Di2
Tr1
Tr2
E1
(Es1)
G1
E2
C1
April-2012
MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Symbol
Item
Conditions
Rating
Unit
VCES
Collector-emitter voltage
G-E short-circuited
1700
V
VGES
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
DC, TC=104 °C
Collector current
ICRM
(Note2)
1000
(Note3)
Pulse, Repetitive
A
2000
Total power dissipation
TC=25 °C
(Note2, 4)
Emitter current
(Free wheeling diode forward current)
TC=25 °C
(Note2, 4)
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Tj
Junction temperature
-
-40 ~ +150
Tstg
Storage temperature
(Note7)
-40 ~ +125
Ptot
IE
(Note1)
IERM
(Note1)
(Note3)
Pulse, Repetitive
8925
1000
W
A
2000
3500
V
°C
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1
mA
IGES
Gate-emitter leakage current
VGE=VGES, C-E short-circuited
-
-
5
μA
VGE(th)
Gate-emitter threshold voltage
IC=100 mA, VCE=10 V
6
7
8
V
T j =25 °C
-
2.2
2.85
T j =125 °C
-
2.45
-
-
-
220
-
-
25
-
-
4.7
-
6000
-
-
-
600
VCEsat
Collector-emitter saturation voltage
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
IC=1000 A
(Note5)
,
VGE=15 V
VCE=10 V, G-E short-circuited
VCC=1000 V, IC=1000 A, VGE=15 V
VCC=1000 V, IC=1000 A, VGE=±15 V,
RG=0.47 Ω, Inductive load
-
200
-
1000
-
-
300
-
2.3
3.0
V
-
500
ns
μC
Emitter-collector voltage
IE=1000 A, G-E short-circuited
trr
(Note1)
Reverse recovery time
VCC=1000 V, IE=1000 A, VGE=±15 V,
-
Qrr
(Note1)
Reverse recovery charge
RG=0.47 Ω, Inductive load
-
90
-
Turn-on switching energy per pulse
VCC=1000 V, IC=IE=1000 A,
-
272.4
-
Err
(Note1)
nC
-
VEC
Eoff
nF
-
(Note1)
Eon
(Note5)
V
ns
mJ
Turn-off switching energy per pulse
VGE=±15 V, RG=0.47 Ω, T j =125 °C,
-
250.2
-
Reverse recovery energy per pulse
Inductive load
Main terminals-chip, per switch,
(Note2)
TC=25 °C
Per switch
-
172.4
-
-
0.286
-
mΩ
-
0.67
-
Ω
R CC'+EE'
Internal lead resistance
rg
Internal gate resistance
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Item
Thermal resistance
(Note2)
Contact thermal resistance
Limits
Conditions
(Note2)
Min.
Typ.
Max.
Unit
Junction to case, per IGBT
-
-
14
K/kW
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
(Note6)
Thermal grease applied
-
-
23
K/kW
-
12
-
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Item
Mounting torque
Limits
Conditions
Min.
Typ.
Max.
Unit
Main terminals
M 6 screw
3.5
4.0
4.5
Mounting to heat sink
M 6 screw
3.5
4.0
4.5
-
1450
-
g
-50
-
+100
μm
m
Weight
-
ec
Flatness of base plate
On the centerline X, Y1, Y2
2
(Note8)
N·m
April-2012
MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
Conditions
Limits
Min.
Typ.
Max.
VCC
(DC) Supply voltage
Applied across C1-E2
-
1000
1100
VGEon
Gate (-emitter drive) voltage
Applied across G1-Es1/G2-Es2
13.5
15.0
16.5
RG
External gate resistance
Per switch
0.47
-
4.7
Unit
V
Ω
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
2. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R t h ( s - a ) } should measure just under the chips.
3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.
4. Junction temperature (T j ) should not increase beyond T j m a x rating.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of test circuit)
6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
7. The operation temperature is restrained by the permission temperature of female connector housing.
8. Base plate flatness measurement points are as in the following figure.
39 mm
39 mm
Y2
+: Convex
-: Concave
Y1
X
Bottom
-: Concave
Bottom
Label side
Bottom
+: Convex
9. Generally, the company name, the brand name listed in this material are the trademark of the companies or registered tradem
arks.
3
April-2012
MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: FWDi. Each mark points the center position of each chip.
4
April-2012
MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
C1
Cs1
VGE=15 V
Shortcircuited
IC
G1
Shortcircuited
C2E1
VGE=15 V
G2
E2
Es2
Tr1
IE
E2
Es2
Di2
～
vGE
90 %
0V
0V
Load
IE
VC C
iC
t
90 %
Irr
G2
vGE
iC
Es2
E2
tf
tr
td ( o n )
t
t d ( of f )
t r r , Q r r test waveform
Switching characteristics test circuit and waveforms
iE
iC
ICM
VCE
iC
IC M
0.5×I r r
10%
0A
vC E
trr
0A
～
+
vCE
-V GE
0
Q r r =0.5×I r r ×t r r
t
Es1
C2E1
RG
iE
0
Cs2
+V GE
E2
VEC test circuit
iE
-VGE
IE
Es2
V
Di1
C1
G1
Shortcircuited
Cs2
G2
V C E s a t test circuit
Cs1
C2E1
Es1
C2E1
Cs2
Tr2
C1
Cs1
G1
G2
E2
Es2
V
Shortcircuited
IC
Shortcircuited
Es1
V
Cs2
G2
C1
Cs1
G1
Es1
C2E1
Cs2
Shortcircuited
G1
Es1
V
C1
Cs1
IEM
vEC
vC E
VC C
VC C
0.1×ICM
0.1×V CC
0.1×VC C
t
0
0.02×IC M
Eon
E of f
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
0A
t
0V
t
Er r
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy integral range
5
April-2012
MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
VGE=15 V
(Chip)
2000
(Chip)
4
VGE=20 V
13.5 V
T j =125 °C
12 V
1500
1000
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
COLLECTOR CURRENT
IC (A)
15 V
11 V
500
10 V
3
T j =25 °C
2
1
9 V
0
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
10
0
500
VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T j =25 °C
1500
2000
IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
(Chip)
10
(Chip)
10000
6
IC=1000 A
IE (A)
IC=2000 A
8
IC=400 A
EMITTER CURRENT
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
1000
COLLECTOR CURRENT
4
T j =125 °C
1000
T j =25 °C
2
0
100
6
8
10
12
14
GATE-EMITTER VOLTAGE
16
18
0.5
20
VGE (V)
1
1.5
2
2.5
EMITTER-COLLECTOR VOLTAGE
6
3
3.5
VEC (V)
April-2012
MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=0.47 Ω, T j =125 °C,
INDUCTIVE LOAD
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, IC=1000 A, VGE=±15 V, T j =125 °C,
INDUCTIVE LOAD
10000
td(off)
1000
td(on)
SWITCHING TIME (ns)
SWITCHING TIME (ns)
10000
tf
tr
100
10
100
tf
tr
100
10000
0.1
IC (A)
1
EXTERNAL GATE RESISTANCE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=0.47 Ω, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
10
RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, IC/IE=1000 A, VGE=±15 V, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
1000
10000
Eon
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
td(on)
10
1000
COLLECTOR CURRENT
Eoff
Err
100
10
100
td(off)
1000
Eon
1000
Eoff
100
Err
10
1000
10000
0.1
1
EXTERNAL GATE RESISTANCE
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
7
10
RG (Ω)
April-2012
MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=0.47 Ω, T j =25 °C,
INDUCTIVE LOAD
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T j =25 °C
10000
1000
Cies
t r r (ns), I r r (A)
CAPACITANCE (nF)
100
10
Coes
1000
Irr
1
trr
Cres
0.1
0.1
1
10
COLLECTOR-EMITTER VOLTAGE
100
100
100
VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
IC=1000 A, T j =25 °C
Single pulse, TC=25°C
Zth(j-c)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
VGE (V)
VCC=800 V
GATE-EMITTER VOLTAGE
10000
IE (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
15
VCC=1000 V
10
5
0
0
1000
EMITTER CURRENT
2000
4000
GATE CHARGE
6000
8000
10000
QG (nC)
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
R t h ( j - c ) Q =14 K/kW, R t h ( j - c ) D =23 K/kW
TIME (S)
8
April-2012
MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
Keep safety first in your circuit designs!
·Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is
always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property
damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of
substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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9
April-2012