TENTATIVE < IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .............….......................… 1 4 0 0 A Collector-emitter voltage V CES ......................… 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 °C ●Flat base Type ●Copper base plate (non-plating) ●RoHS Directive compliant Dual switch (Half-Bridge) APPLICATION Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm INTERNAL CONNECTION Tolerance otherwise specified C2E1 C2 (Cs2) Di2 G2 C1 (Cs1) Di1 Tr1 Tr2 E1 (Es1) Division of Dimension 3 Tolerance 0.5 to ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to be ±0.4. E2 (Es2) G1 E2 C1 July-2012 1 < IGBT MODULES > TENTATIVE CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ± 20 V IC Item DC, TC=124 °C Collector current ICRM Ptot IE IERM (Note1) (Note2, 4) 1400 (Note3) 2800 Pulse, Repetitive Total power dissipation (Note1) Conditions TC=25 °C (Note2, 4) 9375 (Note2) Emitter current A W 1400 (Note3) Pulse, Repetitive A 2800 Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 4000 V Tjmax Maximum junction temperature - 175 °C TCmax Maximum case temperature (Note4) 125 °C Tjop Operating junction temperature - -40 ~ +150 Tstg Storage temperature - -40 ~ +125 °C ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 3.0 μA VGE(th) Gate-emitter threshold voltage IC=140 mA, VCE=10 V V 5.4 6.0 6.6 T j =25 °C - 1.55 1.90 VGE=15 V, T j =125 °C - 1.75 - (Terminal) T j =150 °C - 1.80 - - - 150 IC=1400 A VCEsat Collector-emitter saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance (Note6) , V IC=1400 A, VGE=15 V, (Chip) QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time VCE=10 V, G-E short-circuited VCC=600 V, IC=1400 A, VGE=15 V VCC=600 V, IC=1400 A, VGE=±15 V, RG=0 Ω, Inductive load IE=1400 A VEC (Note1) trr (Note1) Qrr (Note1) Eon Eoff Err (Note1) Emitter-collector voltage Reverse recovery time (Note6) , - - 30 - - 2.5 - 3500 - - - - - 900 250 - - 950 - - 350 nF nC ns T j =25 °C - 1.65 2.10 G-E short-circuited, T j =125 °C - 1.65 - (Terminal) T j =150 °C - 1.65 - IE=1400 A, G-E short-circuited, (Chip) - 1.65 - V VCC=600 V, IE=1400 A, VGE=±15 V, - - 450 ns μC V Reverse recovery charge RG=0 Ω, Inductive load - VCC=600 V, IC=IE=1400 A, - 90 82.2 - Turn-on switching energy per pulse Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, T j =150 °C, - 260 - Reverse recovery energy per pulse Inductive load - 122 - mJ - 0.286 - mΩ - 1.7 - Ω R CC'+EE' Internal lead resistance rg Internal gate resistance Main terminals-chip, per switch, TC=25 °C (Note4) Per switch July-2012 2 - mJ TENTATIVE < IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE THERMAL RESISTANCE CHARACTERISTICS Symbol Item Rth(j-c)Q Thermal resistance Rth(j-c)D Rth(c-s) Limits Conditions (Note4) Contact thermal resistance (Note4) Min. Typ. Max. Junction to case, per Inverter IGBT - - 16 Junction to case, per Inverter FWDi - - 26 - 6 - Case to heat sink, per 1 module, Thermal grease applied (Note7) Unit K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Mt Mounting torque Ms ds Creepage distance da Clearance m Weight ec Limits Conditions Min. Max. Main terminals M 6 screw 3.5 4.0 4.5 Mounting to heat sink M 6 screw 3.5 4.0 4.5 Terminal to terminal 24 - - Terminal to base plate 33 - - 14 - - - - - 1450 - g -50 - +100 μm On the centerline X, Y1, Y2 (Note5) 36 mm Y2 +: Convex X Bottom -: Concave Bottom Label side Bottom mm 33 -: Concave Y1 N·m Terminal to base plate Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 2. Junction temperature (T j ) should not increase beyond T j m a x rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit. 6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 7. The base plate (mounting side) flatness measurement points (X, Y1, Y2) are as follows of the following figure. 36 mm Unit Terminal to terminal - Flatness of base plate Typ. +: Convex 8. The company name and product names herein are the trademarks and registered trademarks of the respective companies. July-2012 3 mm < IGBT MODULES > TENTATIVE CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS Symbol Item Limits Conditions Min. Typ. Max. Unit VCC (DC) Supply voltage Applied across P-N terminals - 600 850 VGEon Gate (-emitter drive) voltage Applied across G-Es terminals 13.5 15.0 16.5 V RG External gate resistance Per switch 0 - 2.2 Ω CHIP LOCATION (Top view) V Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi TEST CIRCUIT C1 Cs1 VGE=15V IC G1 V Shortcircuited Shortcircuited Shortcircuited V Es1 C2E1 Cs2 C2E1 Shortcircuited VGE=15V G2 IC G2 Es2 E2 V Tr1 C1 Cs1 IE Shortcircuited G1 G1 Es1 Cs2 C1 Cs1 Es2 G1 Es1 Cs2 Es1 C2E1 Shortcircuited G2 Tr2 E2 V Di1 V C E s a t test circuit 4 C2E1 IE Es2 E2 Di2 VEC test circuit July-2012 Cs2 G2 Es2 E2 C1 Cs1 < IGBT MODULES > TENTATIVE CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS ～ vGE iE C1 Cs1 90 % 0V G1 -VGE IE Es1 VC C iC ～ + Cs2 +V GE 0V G2 vGE t Irr iC Es2 0A tf tr td ( o n ) t d ( of f ) t Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE iC iC ICM 0.5×I r r 10% E2 vCE trr 0A 90 % vCE -V GE Q r r =0.5×I r r ×t r r t Load C2E1 RG iE 0 VCC ICM VCC IEM vEC vCE t 0A 0 0.1×ICM 0.1×VCC t 0 0.1×VCC 0.02×ICM ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t VCC 0V t ti FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) July-2012 5 < IGBT MODULES > TENTATIVE CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 °C VGE=15 V 2800 3.5 VGE=20 V 13.5 V 12 V 2400 3.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (A) 15 V 2000 11 V 1600 1200 10 V 800 9V 400 T j =125 °C 2.5 T j =150 °C 2.0 1.5 T j =25 °C 1.0 0.5 0 0.0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 10 0 VCE (V) 400 800 1200 1600 COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2000 2400 2800 IC (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) T j =25 °C G-E short-circuited 2800 10 2400 6 IC=560 A 4 IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) IC=1400 A 2000 EMITTER CURRENT IC=2800 A 8 1600 T j =150 °C 1200 T j =125 °C 800 2 400 0 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 18 T j =25 °C 0 20 0.0 VGE (V) 0.5 1.0 1.5 2.0 EMITTER-COLLECTOR VOLTAGE July-2012 6 2.5 VEC (V) 3.0 < IGBT MODULES > TENTATIVE CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC=1400 A, VGE=±15 V, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 10000 1000 10000 td(on) SWITCHING TIME td(off) tf 10 100 100 1000 td(off) tf 100 0.1 1 IC (A) 10 EXTERNAL GATE RESISTANCE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 td(off) , tf 1000 10 10000 COLLECTOR CURRENT (ns) (ns) 100 SWITCHING TIME 1000 SWITCHING TIME 100 SWITCHING TIME tr tr td(on) , tr td(off) , tf td(on) , tr (ns) (ns) td(on) RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC/IE=1400 A, VGE=±15 V, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 100 Err 100 10 10 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) (mJ) Eoff SWITCHING ENERGY Eoff SWITCHING ENERGY Eon (mJ) REVERSE RECOVERY ENERGY (mJ) Eon 1000 Eon 100 Err 10 1 100 Eoff 0.1 10000 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) 1 EXTERNAL GATE RESISTANCE July-2012 7 10 RG (Ω) < IGBT MODULES > TENTATIVE CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C G-E short-circuited, T j =25 °C 1000 1000 Irr Cies 10 Coes 1 Cres trr t r r (ns), I r r (A) CAPACITANCE (nF) 100 0.1 100 0.1 1 10 COLLECTOR-EMITTER VOLTAGE 100 100 IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) V C C = 600 V, I C = 1400 A, T j =25 °C Single pulse, TC=25°C R t h ( j - c ) Q =16 K/kW, R t h ( j - c ) D =26 K/kW Zth(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE VGE (V) GATE-EMITTER VOLTAGE 10000 EMITTER CURRENT 20 15 10 5 0 0 1000 VCE (V) 1000 2000 GATE CHARGE 3000 4000 5000 QG (nC) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 TIME (S) July-2012 8 0.1 1 10 < IGBT MODULES > TENTATIVE CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. •Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (www.MitsubishiElectric.com/semiconductors/). •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2012 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. July-2012 9