AP9565BGH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
-40V
RDS(ON)
52mΩ
ID
G
-17A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP9565BGJ) is
available for low-profile applications.
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
-17
A
ID@TC=100℃
Drain Current, VGS @ 10V
-11
A
-60
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.2
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Units
5.0
℃/W
62.5
℃/W
110
℃/W
1
201501273
AP9565BGH/J-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-40
-
-
V
VGS=-10V, ID=-8A
-
-
52
mΩ
VGS=-4.5V, ID=-6A
-
-
90
mΩ
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-8A
-
9.6
-
S
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (T j=125 C) VDS=-32V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-8A
-
7.8
12.5
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-32V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.8
-
nC
2
td(on)
Turn-on Delay Time
VDS=-20V
-
8
-
ns
tr
Rise Time
ID=-8A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
22
-
ns
tf
Fall Time
VGS=-10V
-
23
-
ns
Ciss
Input Capacitance
VGS=0V
-
530
850
pF
Coss
Output Capacitance
VDS=-25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Min.
Typ.
IS=-8A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-8A, VGS=0V,
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9565BGH/J-HF
40
40
30
-ID , Drain Current (A)
-ID , Drain Current (A)
T C = 25 C
-10V
-7.0V
T C = 150 o C
-10V
-7.0V
o
-5.0V
-4.5V
20
10
30
-5.0V
-4.5V
20
10
V G = -3.0 V
V G = -3.0 V
0
0
0
1
2
3
4
5
6
0
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
90
1.8
I D =-8A
V G =-10V
I D = -6 A
o
T C =25 C
80
Normalized RDS(ON)
RDS(ON) (mΩ )
1.5
70
60
1.2
0.9
50
0.6
40
2
4
6
8
-50
10
10
1.4
8
1.2
6
o
T j =150 C
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Normalized VGS(th)
-IS(A)
Fig 3. On-Resistance v.s. Gate Voltage
o
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
T j =25 C
4
1
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9565BGH/J-HF
f=1.0MHz
10000
V DS = -32V
I D = -8A
10
8
1000
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C iss
C oss
C rss
100
4
2
10
0
0
5
10
15
1
20
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us
-ID (A)
10
1ms
1
10ms
100ms
DC
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V DS =-5V
VG
-ID , Drain Current (A)
30
T j =25 o C
QG
T j =150 o C
-4.5V
QGS
20
QGD
10
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9565BGH/J-HF
MARKING INFORMATION
TO-251
9565BGJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
9565BGH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5