AP9971GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Low On-resistance
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Simple Drive Requirement
BVDSS
60V
RDS(ON)
36mΩ
ID
▼ Surface Mount Package
25A
G
▼ RoHS Compliant
S
Description
AP9971 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP9971GJ) are available for low-profile
applications.
G D
S
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
25
A
ID@TC=100℃
Drain Current, VGS @ 10V
16
A
1
IDM
Pulsed Drain Current
80
A
PD@TC=25℃
Total Power Dissipation
39
W
Linear Derating Factor
0.31
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Unit
3.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
201501264
AP9971GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
V
VGS=10V, ID=18A
-
-
36
mΩ
VGS=4.5V, ID=12A
-
-
50
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=18A
-
17
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=18A
-
18
30
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
11
-
nC
VDS=30V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
24
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
26
-
ns
tf
Fall Time
VGS=10V
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1700 2700
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Min.
Typ.
IS=18A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=18A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
38
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971GH/J-HF
100
70
o
T C =25 C
60
10V
7.0V
50
5.0V
o
T C =150 C
10V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
80
5.0V
60
4.5V
40
4.5V
40
30
20
V G =3.0V
20
V G =3.0V
10
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
2.5
I D = 18 A
I D =18A
V G =10V
T C =25 o C
Normalized RDS(ON)
2.0
RDS(ON) (mΩ)
35
30
1.5
1.0
0.5
trr
0.31
25
0.0
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
50
100
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
2.6
16
2.2
VGS(th) (V)
T j =25 o C
IS(A)
12
150
1.8
8
1.4
4
1
0
Qrr
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
o
T j =150 C
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9971GH/J-HF
f=1.0MHz
12
10000
V DS =30V
V DS =38V
V DS =48V
8
C iss
1000
C (pF)
VGS , Gate to Source Voltage (V)
I D =18A
10
6
4
C oss
C rss
100
2
0
10
0
10
20
30
40
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
10us
100us
10
ID (A)
1ms
10ms
1
100ms
DC
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
T
0.01
0.1
1
10
100
1000
trr
0.31
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
t
0.02
0.001
0.01
0.1
Qrr
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP9971GH/J-HF
MARKING INFORMATION
TO-251
9971GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
9971GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5