AP40T03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 30V RDS(ON) 25mΩ ID G 28A S Description AP40T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP40T03GJ) are available for low-profile applications. GD G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +25 V ID@TC=25℃ Drain Current, VGS @ 10V 28 A ID@TC=100℃ Drain Current, VGS @ 10V 18 A 95 A 31.25 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Units 4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 1 201409017 AP40T03GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=18A - - 25 mΩ VGS=4.5V, ID=14A - - 45 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=18A - 20 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS= +25V, VDS=0V - - +100 nA Qg Total Gate Charge ID=18A - 9 - nC Qgs Gate-Source Charge VDS=20V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC td(on) Turn-on Delay Time VDS=15V - 6 - ns tr Rise Time ID=18A - 62 - ns td(off) Turn-off Delay Time RG=3.3Ω - 16 - ns tf Fall Time VGS=10V - 5 - ns Ciss Input Capacitance VGS=0V - 655 - pF Coss Output Capacitance VDS=25V - 145 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Min. Typ. - - 28 A - - 95 A - - 1.3 V . Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.3V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 1 2 Forward On Voltage Tj=25℃, IS=28A, VGS=0V Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP40T03GH/J-HF 90 75 10V 8 .0V ID , Drain Current (A) 6 .0V 60 10V 8 .0V o T C =150 C ID , Drain Current (A) o T C =25 C 30 50 6 .0V 25 V G =4.0V V G = 4. 0V 0 0 0.0 1.0 2.0 3.0 4.0 0.0 1.0 V DS , Drain-to-Source Voltage (V) 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 70 I D =18A V G =10V RDS(ON) (mΩ) 50 . 30 Normalized RDS(ON) I D =14A T C =25 ℃ 1.4 0.8 0.2 10 0 5 10 -50 15 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 100 2.0 10 T j =25 o C IS(A) VGS(th) (V) T j =150 o C 1.5 1 1.0 0.5 0.1 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP40T03GH/J-HF f=1.0MHz 10 1000 C iss V DS =10V V DS =15V V DS =20V 6 C (pF) VGS , Gate to Source Voltage (V) I D =18A 8 C oss C rss 100 4 2 10 0 0 3 6 9 1 12 8 Fig 7. Gate Charge Characteristics 22 29 Fig 8. Typical Capacitance Characteristics 100 1 Operation in this area limited by RDS(ON) . 10 1ms T C =25 o C Single Pulse 10ms 100ms DC 1 0.1 1 10 Normalized Thermal Response (Rthjc) Duty factor = 0.5 100us ID (A) 15 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 100 0.00001 0.0001 Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP40T03GH/J-HF MARKING INFORMATION TO-251 40T03GJ Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence TO-252 40T03GH Part Number meet Rohs requirement for low voltage MOSFET only . Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5