AP4506GEM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low On-resistance D1 RDS(ON) D1 ▼ Fast Switching Performance 30mΩ ID G2 6.4A P-CH BVDSS S2 SO-8 30V G1 S1 -30V RDS(ON) 40mΩ ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and costeffectiveness. -6A D1 G1 D2 G2 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Units P-channel 30 -30 V +20 +20 V Continuous Drain Current 3 6.4 -6.0 A Continuous Drain Current 3 5.1 -4.8 A 30 -30 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 2.0 W Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 62.5 ℃/W 1 200902103 AP4506GEM o N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. 30 - - V VGS=10V, ID=6A - - 30 mΩ VGS=4.5V, ID=4A - - 36 mΩ VGS=0V, ID=250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=6A - 17 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=70 C) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA ID=6A - 8.3 13 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC 2 td(on) Turn-on Delay Time VDS=15V - 6 - ns tr Rise Time ID=1A - 5.6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 17 - ns tf Fall Time RD=15Ω - 3.6 - ns Ciss Input Capacitance VGS=0V - 575 920 pF Coss Output Capacitance VDS=25V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Min. Typ. IS=1.5A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=6A, VGS=0V - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC 2 AP4506GEM P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. -30 - - V VGS=-10V, ID=-5A - - 40 mΩ VGS=-4.5V, ID=-3A - - 52 mΩ VGS=0V, ID=-250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5A - 12 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -1 uA Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA ID=-5A - 12.6 20 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 2.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6.2 - nC 2 td(on) Turn-on Delay Time VDS=-15V - 7 - ns tr Rise Time ID=-1A - 5.6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 24 - ns tf Fall Time RD=15Ω - 35 - ns Ciss Input Capacitance VGS=0V - 1045 1670 pF Coss Output Capacitance VDS=-20V - 220 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 150 - pF Min. Typ. IS=-1.5A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-5A, VGS=0V - 23 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 15 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4506GEM N-Channel 30 30 10V 7.0V 5.0V 4.5V ID , Drain Current (A) 20 V G =3.0V 10 20 V G =3.0V 10 0 0 0 1 2 3 4 0 5 1 V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 28 1.8 ID=6A V G =10V ID=4A 26 T A =25 o C 1.6 Normalized RDS(ON) RDS(ON) (mΩ) 10V 7.0V 5.0V 4.5V o T A = 150 C ID , Drain Current (A) o T A = 25 C 24 22 1.4 1.2 20 1.0 18 0.8 16 2 4 6 8 25 10 50 75 100 125 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.6 Normalized VGS(th) (V) IS(A) 8 6 T j =150 o C T j =25 o C 4 1.2 0.8 2 0.4 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4506GEM N-Channel f=1.0MHz 1000 C iss I D =6A V DS =24V 8 C (pF) VGS , Gate to Source Voltage (V) 12 C oss 100 C rss 4 10 0 0 5 10 15 1 20 5 9 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 100us ID (A) 13 V DS , Drain-to-Source Voltage (V) 1ms 1 10ms 100ms 0.1 1s T A =25 o C Single Pulse DC 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W Single Pulse 0.01 0.1 1 10 100 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.1 1 10 100 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 5 AP4506GEM P-Channel 30 30 -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) 20 V G = - 3.0V 10 20 V G = - 3.0V 10 0 0 0 1 2 3 4 0 5 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 44 1.6 I D = -5A V G = -10V I D = -3 A T A = 25 o C 1.4 Normalized RDS(ON) 40 RDS(ON) (mΩ) -10V -7.0V -5.0V -4.5V o T A = 150 C -ID , Drain Current (A) o T A = 25 C 36 32 1.2 1.0 0.8 28 0.6 24 2 4 6 8 -50 10 0 50 100 150 o -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.6 Normalized -VGS(th) (V) -IS(A) 8 6 T j =150 o C T j =25 o C 4 1.2 0.8 2 0 0.4 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4506GEM P-Channel f=1.0MHz 10000 I D = -5 A V DS = -24 V C iss 1000 8 C (pF) -VGS , Gate to Source Voltage (V) 12 C oss C rss 100 4 10 0 0 10 20 1 30 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 100us 10 1ms -ID (A) 9 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 10ms 1 100ms 1s 0.1 o T c =25 C Single Pulse DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W Single Pulse 0.01 0.01 0.1 1 10 100 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 7