AP9930AGM
RoHS-compliant Product
Advanced Power
Electronics Corp.
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Full Bridge Application on
LCD Monitor Inverter
N-CH BVDSS
P2G
N2D/P2D
RDS(ON)
P1S/P2S
P1G
▼ RoHS Compliant
35mΩ
ID
N2G
5.2A
P-CH BVDSS
N1S/N2S
N1D/P1D
SO-8
30V
N1G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
-30V
RDS(ON)
72mΩ
ID
-3.5A
P1S
P2S
P1G
P2G
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
P2N2D
P1N1D
N2G
N1G
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
N2S
N1S
Absolute Maximum Ratings
Units
P-channel
30
-30
V
+20
+20
V
Continuous Drain Current
3
5.2
-3.5
A
Continuous Drain Current
3
4.1
-2.8
A
20
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
TJ
1.38
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
90
℃/W
1
201004261
AP9930AGM
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
VGS=10V, ID=5A
-
-
35
mΩ
VGS=4.5V, ID=3A
-
-
60
mΩ
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=5A
-
6.3
10
nC
2
VGS=0V, ID=250uA
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
15
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
420
670
pF
Coss
Output Capacitance
VDS=25V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8
-
nC
2
AP9930AGM
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-3A
-
-
72
mΩ
VGS=-4.5V, ID=-2A
-
-
100
mΩ
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-3A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-3A
-
6.3
10
nC
2
VGS=0V, ID=-250uA
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3
-
nC
2
td(on)
Turn-on Delay Time
VDS=-15V
-
5
-
ns
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
21
-
ns
tf
Fall Time
VGS=-10V
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
520
830
pF
Coss
Output Capacitance
VDS=-25V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-3A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board , t <10sec ; 186 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP9930AGM
N-Channel
20
20
10V
7.0V
6.0V
5.0V
V G =4.0V
16
ID , Drain Current (A)
16
ID , Drain Current (A)
o
T A =150 C
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =25 C
12
8
4
12
8
4
0
0
0
0
1
1
2
2
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
45
I D =5A
V G =10V
I D =3A
T A =25 ℃
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
40
35
30
1.2
1.0
0.8
25
0.6
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.4
1.2
T j =150 o C
Normalized VGS(th) (V)
IS(A)
6
T j =25 o C
4
1
0.8
2
0.6
0.4
0
0.1
0.3
0.5
0.7
0.9
1.1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP9930AGM
N-Channel
f=1.0MHz
10
800
8
600
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =5A
V DS =15V
C iss
400
4
200
2
C oss
C rss
0
0
0
2
4
6
8
10
1
12
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
100us
ID (A)
10
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 186℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP9930AGM
P-Channel
20
20
-10V
-7.0V
-6.0V
-5.0V
V G =-4.0V
-ID , Drain Current (A)
16
-10V
-7.0V
-6.0V
-5.0V
V G =-4.0V
o
T A =150 C
-ID , Drain Current (A)
o
T A =25 C
12
8
15
10
5
4
0
0
0
1
2
3
0
4
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
90
I D =-2A
T A =25 ℃
I D = -3 A
V G = -10 V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
80
70
1.4
1.2
1
60
0.8
50
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.4
1.2
T j =150 o C
Normalized -VGS(th) (V)
-IS(A)
6
T j =25 o C
4
2
1
0.8
0.6
0
0.4
0.1
0.3
0.5
0.7
0.9
1.1
-V SD ,Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP9930AGM
P-Channel
f=1.0MHz
800
I D =-3A
V DS =-15V
8
600
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C iss
400
4
200
2
C oss
C rss
0
0
0
2
4
6
8
10
1
12
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this
area limited by
RDS(ON)
100us
-ID (A)
10
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 186℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7