AP28G45GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability C ▼ 3.3V Gate Drive ▼ Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8 E E E Absolute Maximum Ratings Rating Units VCE Symbol Collector-Emitter Voltage 450 V VGE Gate-Emitter Voltage ±6 V IGEP Pulsed Gate-Emitter Voltage ±8 V Pulsed Collector Current, VGE @ 3.3V 130 A Maximum Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ ICP PD@TC=25℃ 1 Parameter Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions VGE=± 6V, VCE=0V Min. Typ. Max. Units - - 10 uA - - 10 uA V IGES Gate-Emitter Leakage Current ICES Collector-Emitter Leakage Current VCE=450V, VGE=0V VCE(sat) Collector-Emitter Saturation Voltage VGE=3.3V, ICP=130A (Pulsed) - 3.8 6 VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA - - 1 V Qg Total Gate Charge IC=40A - 74 120 nC Qge Gate-Emitter Charge VCE=360V - 8 - nC Qgc Gate-Collector Charge VGE=4.5V - 34 - nC td(on) Turn-on Delay Time VCC=200V - 20 - ns tr Rise Time IC=15A - 100 - ns td(off) Turn-off Delay Time RG=10Ω - 400 - ns tf Fall Time VGE=5V - 3 - µs Cies Input Capacitance VGE=0V - 3020 4830 pF Coes Output Capacitance VCE=25V - 220 - pF Reverse Transfer Capacitance f=1.0MHz - 50 - pF - - 50 ℃/W Cres RthJA 1 Thermal Resistance Junction-Ambient Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad. Data and specifications subject to change without notice 201117031 AP28G45GEM 140 240 T A =25 o C 5.0V 4.0V IC , Collector Current (A) IC , Collector Current (A) 200 160 3.3V 120 2.0V 80 V G =1.0V 40 5.0V 4.0V o 120 T A = 150 C 3.3 V 100 80 60 2.0V 40 V G =1.0V 20 0 0 0 2 4 6 8 10 12 0 1 V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics 4 5 6 7 9 V GE =4.0V VCE(sat) ,Saturation Voltage(V) V CE =6.0V 200 o 25 C o 70 C o 125 C o T A =150 C 160 120 80 40 0 7 I C =130A I C =120A 5 I C =100A I C =50A 3 1 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 Junction Temperature ( o C) V GE , Gate-Emitter Voltage (V) Fig 3. Collector Current v.s. Gate-Emitter Voltage Fig 4. Collector- Emitter Saturation Voltage v.s. Junction Temperature 10 VCE ,Collector-Emitter Voltage(V) 1.2 VGE(th) ,Gate Threshold Voltage (V) 3 Fig 2. Typical Output Characteristics 240 IC , Collector Current(A) 2 V CE , Collector-Emitter Voltage (V) 1.0 0.8 0.6 0.4 0.2 0.0 o T A =25 C I C = 130 A 120A 100A 50A 8 6 4 2 0 -50 0 50 100 o Junction Temperature ( C ) Fig 5. Gate Threshold Voltage v.s. Junction Temperature 150 0 1 2 3 4 V GE , Gate-Emitter Voltage(V) Fig 6. Collector Current v.s. Gate-Emitter Voltage 5 6 AP28G45GEM f=1.0MHz 10000 160 o C (pF) 1000 Coes 100 Cres ICP , Peak Collector Current (A) T A =25 C Cies 10 120 80 40 0 1 5 9 13 17 21 25 29 0 2 4 6 8 V GE , Gate-to-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V)) Fig 7. Typical Capacitance Characterisitics Fig 8. Maximum Pulse Collector Current VCE 90% RC TO THE OSCILLOSCOPE C VCE G RG VCC=200 V 10% E VGE + - 5V VGE td(on) tr Fig 9. Switching Time Test Circuit td(off) tf Fig 10. Switching Time Waveform VCE TO THE C OSCILLOSCOPE G VCC=360V VGE E + 1~3mA - IG IC VGE , Gate -Emitter Voltage (V) 12 I CP =40A V CE =360V 10 8 6 4 2 0 0 40 80 120 160 Q G , Gate Charge (nC) Fig 11. Gate Charge Test Circuit Fig 12. Gate Charge Waveform 200