AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability C C C VCE 400V ICP 150A C ▼ Low Gate Drive ▼ Strobe Flash Applications TSSOP-8 E E E C G G E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGEP Peak Gate-Emitter Voltage ±6 V Pulsed Collector Current, V GE @ 2.5V 150 A Maximum Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range 150 ℃ ICP PD@TA=25℃ 1 o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGE=± 6V, VCE=0V Min. Typ. Max. Units - - ±10 uA - - 10 uA - 5.2 9 V 0.3 - 1.2 V IGES Gate-Emitter Leakage Current ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V VCE(sat) Collector-Emitter Saturation Voltage VGE=2.5V, ICP=150A (Pulsed) VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA Qg Total Gate Charge IC=40A - 76 130 nC Qge Gate-Emitter Charge VCE=200V - 4 - nC Qgc Gate-Collector Charge VGE=4V - 26 - nC td(on) Turn-on Delay Time VCC=320V - 220 - ns tr Rise Time IC=160A - 800 - ns td(off) Turn-off Delay Time RG=10Ω - 1.6 - µs tf Fall Time VGE=4V - 1.5 - µs Cies Input Capacitance VGE=0V - 4485 8240 pF Coes Output Capacitance VCE=30V - 44 - pF Reverse Transfer Capacitance f=1.0MHz - 40 - pF - - 125 ℃/W Cres RthJA 1 Thermal Resistance Junction-Ambient Notes: 2 1.Surface mounted on 1 in copper pad of FR4 board, t=10s. Data and specifications subject to change without notice 1 200805306 AP28G40GEO 80 160 o T A =25 C 60 IC , Collector Current (A) IC , Collector Current (A) 120 5.0 V 4. 5 V 3.5 V 3 .0V V G = 2.5 V T A = 150 o C 5.0V 4.5V 3.5V 3.0V V G =2.5V 80 40 0 40 20 0 0 2 4 6 8 0 2 4 6 8 V CE , Collector-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 6 240 V CE =6.0V V GE =4.0V VCE(sat) ,Saturation Voltage(V) 200 IC , Collector Current(A) o T A =25 C 160 o T A =150 C 120 80 40 0 5 I C =90A 4 I C =60A 3 2 I C =20A 1 0 1 2 3 4 5 6 0 20 40 60 80 120 140 160 o V GE , Gate-Emitter Voltage (V) Fig 3. Collector Current v.s. Gate-Emitter Voltage Fig 4. Collector- Emitter Saturation Voltage v.s. Junction Temperature 6 8 o T A =25 C T A =150 o C VCE ,Collector-Emitter Voltage(V) VCE ,Collector-Emitter Voltage(V) 100 Junction Temperature ( C) 5 4 I C = 120A 3 I C =80A 2 I C =40A 1 7 6 I C =80A 5 I C =60A 4 I C =40A 3 2 0 1 2 3 4 V GE , Gate-Emitter Voltage(V) Fig 5. Collector Current v.s. Gate-Emitter Voltage 5 6 0 1 2 3 4 5 6 V GE , Gate-Emitter Voltage(V) Fig 6. Collector Current v.s. Gate-Emitter Voltage 2 AP28G40GEO f=1.0MHz 10000 160 T C =70 o C ICP , Peak Collector Current (A) Cies C (pF) 1000 100 Coes Cres 10 120 80 40 0 1 5 9 13 17 21 25 29 33 37 0 2 4 6 8 V GE , Gate-to-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V)) Fig 7. Typical Capacitance Characterisitics Fig 8. Maximum Pulse Collector Current VCE 90% RC TO THE OSCILLOSCOPE C VCE G RG VCC=320 V 10% E VGE + - 4V VGE td(on) tr Fig 9. Switching Time Test Circuit td(off) tf Fig 10. Switching Time Waveform VCE TO THE C OSCILLOSCOPE G VCC=200V VGE E + 1~3mA - IG IC VGE , Gate -Emitter Voltage (V) 6 I CP =40A V CE =200V 5 4 3 2 1 0 0 20 40 60 80 100 120 Q G , Gate Charge (nC) Fig 11. Gate Charge Test Circuit Fig 12. Gate Charge Waveform 3 AP28G40GEO dV/dt Design Notice You should be design dV/dt value is below 400V/us, R G=30Ω when IGBT turn off. Definition of dV/dt The slope of VCE from 30V to 90V dv/dt = (90V-30V) / δt) = 60V / δt Waveform IC (begin) VCE IC (end) 0V, 0A dV/dt period VCE 90V 30V δt Caution on Usage This product is senstive to electrostatic discharge, please handle with caution. 4