AP25G45EM Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability C ▼ 4.5V Gate Drive ▼ Strobe Flash Applications S VCE 450V ICP 150A C C C C G G E SO-8 E E E Absolute Maximum Ratings Parameter Symbol Rating Units VCE Collector-Emitter Voltage 450 V VGE Gate-Emitter Voltage ±6 V VGEP Pulsed Gate-Emitter Voltage ±8 V Pulsed Collector Current 150 A Maximum Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ ICP PD@TC=25℃ 1 Electrical Characteristics@Tj=25oC(unless otherwise specified) Parameter Symbol Min. Typ. Max. Units - - 10 uA IGES Gate-Emitter Leakage Current Test Conditions VGE=± 6V, VCE=0V ICES Collector-Emitter Leakage Current (Tj=25℃) VCE=450V, VGE=0V - - 10 uA VCE(sat) Collector-Emitter Saturation Voltage VGE=4.5V, ICP=150A (Pulsed) - 6 8 V VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 0.35 - 1.2 V Qg Total Gate Charge IC=50A - 64.5 - nC Qge Gate-Emitter Charge VCE=360V - 7 - nC Qgc Gate-Collector Charge VGE=5V - 30 - nC td(on) Turn-on Delay Time VCC=225V - 11.5 - ns tr Rise Time IC=50A - 24.5 - ns td(off) Turn-off Delay Time RG=25Ω - 150 - ns tf Fall Time VGE=5V - 3.3 - µs Cies Input Capacitance VGE=0V - 2227 - pF Coes Output Capacitance VCE=25V - 200 - pF Reverse Transfer Capacitance f=1.0MHz - 79 - pF - - 50 ℃/W Cres RthJA 1 Thermal Resistance Junction-Ambient Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad. Data and specifications subject to change without notice 200507032 AP25G45EM 140 180 T A =25 o C ID , Drain Current (A) 140 120 3.0V 100 80 60 2.0V 40 5.0V 4.5V 4.0V T A =150 o C 120 IC , Collector Current (A) 160 5.0V 4.5V 4.0V 100 3.0V 80 60 2.0V 40 20 20 VG=1.0V VG=1.0V 0 0 0 2 4 6 8 0 10 2 Fig 1. Typical Output Characteristics 8 10 12 10 V GE =4.5V VCE(sat),Saturation Voltage(V) V CE =4.5V 25 ℃ 70 ℃ 125 ℃ T A =150 ℃ 120 80 40 I C =130A 8 6 I C =100A 4 I C =50A 2 0 0 0 1 2 3 4 5 0 6 20 40 60 80 100 120 140 160 Junction Temperature ( o C) V GE , Cate-Emitter Voltage (V) Fig 3. Collector Current v.s. Gate-Emitter Voltage Fig 4. Collector- Emitter Saturation Voltage v.s. Junction Temperature 200 ICP, Peak Collector Current (A) 1.5 1.2 VGE(th) (V) 6 Fig 2. Typical Output Characteristics 160 IC , Collector Current(A) 4 V CE , Collector-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V) 0.9 0.6 0.3 0 160 120 80 40 0 -50 0 50 Junction Temperature ( 100 o C) Fig 5. Gate Threshold Voltage v.s. Junction Temperature 150 0 1 2 3 4 5 6 V GE , Gate-to-Emitter Voltage (V) Fig 6. Minimum Gate Drive Area 7 AP25G45EM f=1.0MHz 10000 12 VGE , Gate -Emitter Voltage (V) 11 Capacitance (pF) Cies 1000 Coes 100 Cres I CP =50A V CC =360V 10 9 8 7 6 5 4 3 2 1 0 10 1 5 9 13 17 21 25 29 0 30 Fig 7. Typical Capacitance Characterisitics 60 90 120 150 Q G , Gate Charge (nC) VCE, Collector-Emitter Voltage (V) Fig 8. Gate Charge Waveform VCE RC 90% TO THE OSCILLOSCOPE C VCE G RG 225 V 10% E VGE + - 5V VGE td(on) tr Fig 9. Switching Time Test Circuit td(off) tf Fig 10. Switching Time Waveform VCE TO THE OSCILLOSCOPE C Flasher Vtrig G 300V E CM RG V GE + _ IGBT + - 1~3mA IG VG IC VCM = 300V CM =100uF Fig 11. Gate Charge Test Circuit ICP = 150A VG =5V Fig 12. Application Test Circuit VCM