AP6982GN2-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V Gate Drive
D
▼ Small Size & Lower Profile
▼ Halogen Free & RoHS Compliant Product
BVDSS
20V
RDS(ON)
12.5mΩ
ID
G
11A
S
Top view
Description
D
AP6982 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
D
D
D
S
S
D
S
D
D
G
DFN 2x2
D
D
G
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
20
V
+8
V
3
11
A
3
8.7
A
40
A
2.4
W
Continuous Drain Current @ VGS=4.5V
Continuous Drain Current @ VGS=4.5V
1
Pulsed Drain Current
IDM
Rating
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient 3
52
℃/W
Data and specifications subject to change without notice
1
201408202
AP6982GN2-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
20
-
-
V
VGS=4.5V, ID=10A
-
9.3
12.5
mΩ
VGS=2.5V, ID=5A
-
11.3
16
mΩ
VGS=1.8V, ID=2A
-
15
21
mΩ
0.3
0.5
1
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=10A
-
34
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=10A
-
22
35.2
nC
Qgs
Gate-Source Charge
VDS=10V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
9
-
ns
tr
Rise Time
ID=1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
40
-
ns
tf
Fall Time
VGS=5V
-
10
-
ns
Ciss
Input Capacitance
.
VGS=0V
Coss
Output Capacitance
Crss
Rg
-
1500 2400
pF
VDS=10V
-
170
-
pF
Reverse Transfer Capacitance
f=1.0MHz
-
155
-
pF
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
11
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
5
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s ; 165oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6982GN2-HF
40
40
o
30
ID , Drain Current (A)
ID , Drain Current (A)
T A = 150 o C
5.0V
4.5V
3.5V
2.5V
V G = 1.8V
T A = 25 C
20
10
30
20
10
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
2.0
I D = 10 A
V G = 4.5 V
14
12
.
Normalized RDS(ON)
ID=2A
T A =25 ℃
RDS(ON) (mΩ)
5.0V
4.5V
3.5V
2.5V
V G = 1.8V
10
1.6
1.2
0.8
8
0.4
0
1
2
3
4
5
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
I D =250uA
1.6
Normalized VGS(th)
IS(A)
8
6
T j =150 o C
4
T j =25 o C
2
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6982GN2-HF
f=1.0MHz
2000
I D = 10A
V DS =10V
5
1600
C iss
4
C (pF)
VGS , Gate to Source Voltage (V)
6
1200
3
800
2
400
1
C oss
C rss
0
0
0
10
20
30
1
40
5
9
Fig 7. Gate Charge Characteristics
17
21
25
Fig 8. Typical Capacitance Characteristics
100
1
100us
10
1ms
10ms
1
.
100ms
1s
DC
0.1
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 165℃/W
Single Pulse
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
12
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
10
30
20
T j =150 o C
8
6
4
10
T j =25 o C
2
T j = -40 o C
0
0
0
1
2
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
3
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4
AP6982GN2-HF
MARKING INFORMATION
Part Number : 6982
6982
YWWS
Date Code (YWWS)
Y：Last Digit Of The Year
WW：Week
S：Sequence
.
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : DFN 2x2-6L
E
Millimeters
SYMBOLS
D
D
D
E1
e
NOM
MAX
A
0.70
0.75
0.80
A1
0.00
0.03
0.05
b
0.25
0.30
0.35
C
E2
1
MIN
L
b
0.203 (ref.)
D
1.924
2.00
2.076
D1
1.05
0.85
0.95
D2
0.46
0.56
0.66
E
1.924
2.00
2.076
E1
0.80
0.90
1.00
E2
0.20
0.30
0.40
e
Bottom View
L
0.65 (TYP)
0.174
0.25
0.326
A1
A
C
.
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Draw No. M2-N2S6-G-v00
DFN 2X2-6L
DFN 2X2-6L FOOTPRINT
0.65mm
0.85mm
2.00mm
0.4mm
0.25mm
0.3mm
0.9mm
0.65mm
0.3mm
.
ADVANCED POWER ELECTRONICS CORP.
Draw No. M2-N2S6-G-v00