AP9923GEO-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance G2 S2 ▼ Small & Thin Package D2 ▼ Capable of 1.8V Gate Drive S2 TSSOP-8 ▼ RoHS Compliant & Halogen-Free S1 D1 BVDSS -12V RDS(ON) 25mΩ ID G1 S1 -7A D1 Description G1 D2 G2 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. S1 S2 Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units - 12 V +8 V 3 -7.0 A 3 -5.0 A -30 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient Rthj-L Maximum Thermal Resistance, Junction-lead Data and specifications subject to change without notice 3 Value Unit 125 ℃/W 75 ℃/W 1 201009294 AP9923GEO-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -12 - - V VGS=-4.5V, ID=-7A - - 25 mΩ VGS=-2.5V, ID=-6A - - 32 mΩ VGS=-1.8V, ID=-5A - - 48 mΩ -0.3 - -1 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-5V, ID=-7A - 7 - S IDSS Drain-Source Leakage Current VDS=-12V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 C) VDS=-9.6V ,VGS=0V - - -10 uA Gate-Source Leakage VGS=+8V, VDS=0V - - +30 uA ID= -7A - 28 45 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS= -6V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS= -4.5V - 8 - nC VDS= -6V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID= -5A - 55 - ns td(off) Turn-off Delay Time RG= 3.3Ω,VGS= -5V - 75 - ns tf Fall Time RD= 1.2Ω - 100 - ns Ciss Input Capacitance VGS=0V - 2250 3600 pF Coss Output Capacitance VDS=-6V - 635 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 565 - pF Rg Gate Resistance f=1.0MHz - 5 7.5 Ω Min. Typ. Tj=25℃, IS=-0.84A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS= -7A, VGS=0V, - 61 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 56 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9923GEO-HF 30 30 T A =25 o C 20 25 -ID , Drain Current (A) -ID , Drain Current (A) 25 -5.0V -4.5V -3.5V -2.5V V G = -1.8 V o T A =150 C -5.0V -4.5V -3.5V -2.5V V G = -1.8V 15 10 5 20 15 10 5 0 0 0 1 2 3 0 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 40 I D = -6.0A I D = -7.0A V G = -4.5V T A =25 o C Normalized RDS(ON) 1.3 RDS(ON) (mΩ) 30 20 1.0 0.7 10 0.4 0 2 4 6 -50 8 0 50 100 150 o -V GS (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 0.8 8 -VGS(th) (V) -IS (A) 0.6 6 T j =150 o C T j =25 o C 0.4 4 0.2 2 0 0 0 0.2 0.4 0.6 0.8 1 -V SD (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9923GEO-HF f=1.0MHz 10000 6 C iss I D = -7A C (pF) -VGS , Gate to Source Voltage (V) 8 V DS = -6V 4 1000 C oss C rss 2 0 100 0 10 20 30 40 50 1 3 5 Q G , Total Gate Charge (nC) 7 9 11 13 -V DS (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty Factor=0.5 Operation in this area limited by RDS(ON) -ID (A) 10 Normalized Thermal Response (R thja) 100us 1ms 10ms 1 100ms 1s DC 0.1 T A =25 o C Single Pulse 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=208oC/W 0.001 0.01 0.01 0.1 1 10 100 0.0001 0.001 -V DS (V) 0.01 0.1 1 10 100 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 o V DS = -5V T j =25 C T j =150 o C VG -ID , Drain Current (A) 25 QG -4.5V 20 QGS 15 QGD 10 Charge 5 Q 0 0 1 2 3 4 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4