AP4002T-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement 600V RDS(ON) 5Ω ID G ▼ RoHS Compliant BVDSS 400mA S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for commercial-industrial applications. TO-92 G D S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage +30 V ID@TL=25℃ Continuous Drain Current, V GS @ 10V 400 mA 3 A 2 W 0.017 W/℃ 20 mJ 2 A 1 IDM Pulsed Drain Current PD@TL=25℃ Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 150 ℃/W Rthj-l Maximum Thermal Resistance, Junction-lead 60 ℃/W Data & specifications subject to change without notice 1 200807312 AP4002T-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. 600 - - V VGS=10V, ID=400mA - - 5 Ω VGS=0V, ID=1mA 3 Max. Units RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=400mA - 570 - mS IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+30V - - +1 uA ID=2A - 12 19 nC 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 5.5 - nC 3 td(on) Turn-on Delay Time VDD=200V - 10 - ns tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=50Ω,VGS=10V - 52 - ns tf Fall Time RD=200Ω - 19 - ns Ciss Input Capacitance VGS=0V - 375 600 pF Coss Output Capacitance VDS=10V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Min. Typ. Tj=25℃, IS=2A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=2A, VGS=0V, - 340 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 2.2 - uC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4002T-HF 2 2 T A =150 C ID , Drain Current (A) 10V 7.0V 6.0V 1.5 ID , Drain Current (A) 10V 7.0V 6.0V 5.0V o T A =25 o C 1 5.0V 1.5 1 V G = 4.5 V 0.5 0.5 V G = 4.5 V 0 0 0 4 8 0 12 4 8 12 16 20 24 28 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 I D =400mA V G =10V Normalized RDS(ON) Normalized BVDSS (V) 1.1 1 2 1 0.9 0.8 0 -50 0 50 100 -50 150 o 0 50 100 150 T j , Junction Temperature ( o C ) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.2 10 Normalized VGS(th) (V) 8 6 o T j = 25 C IS (A) T j = 150 o C 4 1 0.8 0.6 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4002T-HF f=1.0MHz 1000 C iss 12 I D =2A V DS =480V C (pF) VGS , Gate to Source Voltage (V) 16 8 100 C oss 4 C rss 10 0 0 4 8 12 1 16 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 1 ID (A) 1ms 10ms 0.1 100ms 1s o 0.01 T L =25 C Single Pulse DC 0.001 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjl + T L Single Pulse Rthjl=60 oC/W 0.001 1 10 100 1000 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 100 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4