AP07SL60H-A Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Characteristic D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free VDS @ Tj,max. 700V RDS(ON) 0.6Ω ID G 7A S Description AP07SL60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H) . o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ V 7 A 3 4.4 A 18 A 62.5 W 2 W 5 mJ 1 PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation V +20 Drain Current, VGS @ 10V Pulsed Drain Current Units 650 3 Drain Current, VGS @ 10V IDM Rating 5 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 4 Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice Value Units 2 ℃/W 62.5 ℃/W 1 201408201 AP07SL60H-A Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. 650 - - V VGS=10V, ID=2A - - 0.6 Ω VGS=0V, ID=250uA 2 Max. Units RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=2A - 5 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=2A - 20 32 nC Qgs Gate-Source Charge VDS=480V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 9 - nC td(on) Turn-on Delay Time VDD=300V - 8 - ns tr Rise Time ID=2A - 20 - ns td(off) Turn-off Delay Time RG=3.3Ω - 28 - ns tf Fall Time VGS=10V - 23 - ns Ciss Input Capacitance VGS=0V - 740 1184 pF Coss Output Capacitance VDS=100V Crss Rg - 28 - pF Reverse Transfer Capacitance . f=1.0MHz - 2 - pF Gate Resistance f=1.0MHz - 3.8 7.6 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=2A, VGS=0V - 0.8 - V trr Reverse Recovery Time IS=7A, VGS=0V - 280 - ns Qrr Reverse Recovery Charge dI/dt=50A/µs - 1.8 - µC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Limited by max. junction temperature. Maximum duty cycle D=0.75 4.Surface mounted on 1 in2 copper pad of FR4 board 5.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP07SL60H-A 16 8 o 10V 9.0V 8.0V 7.0V T C =150 C ID , Drain Current (A) T C =25 C ID , Drain Current (A) o 10V 9.0V 8.0V 12 7.0V 8 4 6 0.37Ω V G =6.0V 4 2 V G =6.0V 0 0 0 8 16 24 32 0 4 8 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 16 20 24 Fig 2. Typical Output Characteristics 580 4 I D =2A V G =10V I D =2A o 540 520 . Normalized RDS(ON) T C =25 C 560 RDS(ON) (mΩ) 12 V DS , Drain-to-Source Voltage (V) 3 2 500 1 480 0 460 5 6 7 8 9 -100 10 -50 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C ) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 8 I D =250uA 1.6 IS (A) Normalized VGS(th) 6 4 T j = 150 o C T j = 25 o C 1.2 0.8 2 0.4 0 0 0 0.2 0.4 0.6 0.8 1 V SD (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -100 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP07SL60H-A f=1.0MHz 12 2000 I D =2A V DS =480V 1600 0.37Ω 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 1200 800 C iss 4 400 2 0 C oss C rss 0 0 8 16 24 32 0 100 200 Q G , Total Gate Charge (nC) 300 400 500 600 700 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 10 ID (A) Operation in this area limited by RDS(ON) 10us 100us 1 1ms 10ms 100ms 1s DC 1000 o T C =25 C Single Pulse 0.1 1 10 100 . Normalized Thermal Response (Rthjc) 100 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance 2 80 1.6 Normalized BVDSS PD , Power Dissipation (W) I D =1mA 60 40 1.2 0.8 20 0.4 0 0 0 50 100 150 o T C , Case Temperature ( C ) Fig 11. Total Power Dissipation -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 12. Normalized BVDSS v.s. Junction Temperature 4 AP07SL60H-A MARKING INFORMATION Part Number 07SL60H Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 Millimeters SYMBOLS D D1 E2 E1 F B2 e MAX A2 2.10 2.30 2.50 A3 0.40 0.50 0.65 B 0.40 0.70 1.00 B1 0.50 0.85 1.20 D 6.00 6.50 6.80 D1 4.80 5.35 5.90 4.00 (ref.) F 2.00 2.63 3.05 F1 0.50 0.85 1.20 E1 5.00 5.70 6.30 E2 0.50 1.10 1.80 e F1 B NOM E3 E3 B1 MIN e 2.3 (ref) C 0.35 0.525 0.70 A1 0.00 - 0.25 B2 - - 1.25 L 0 90 0.90 1 34 1.34 1 78 1.78 . A2 C A1 A3 L 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. Draw No. M1-H3-G-v09 TO-252 TO-252 FOOTPRINT: 6.8mm 7mm 2mm 4.6mm 3mm . 0.6mm ADVANCED POWER ELECTRONICS CORP. 1.0mm Draw No. M1-H3-G-v09 1