Crystal oscillator SMALL SOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR SG-636 series • A small SMD that enables high-density mounting. • A general-purpose device with builtin heat-resisting cylindrical AT-cut crystal and allowing almost the same temperature condition for soldering as SMD IC. • Low current consumption. • Provided with output enable function. • 3.3 V operation, stand-by function available. Specifications (characteristics) Item f0 Output frequency range Max. supply voltage Operating voltage Storage temperature Operating temperature Power source voltage Temperature range VDD-GND VDD TSTG TOPR Soldering condition TSOL Frequency stability Current consumption ∆f/f0 lop C-MOS level TTL level Duty tw/t VOH (IOH) Output voltage VOL (IOL) Output load condition (fan out) C-MOS CL TTL N VIH VIL IOE Output enable/disable input voltage Output disable current C-MOS level TTL level C-MOS level TTL level Output rise time Output fall time tTLH tTHL Oscillation start up time Aging tosc fa Shock resistance S.R. SG-636PTJ SG-636PH Specifications SG-636PTF Symbol 2.21675 MHz to 41.0000 MHz -0.5 V to +7.0 V 41.0001 MHz to 70.0000 MHz SG-636SCE/PCE 2.21675 MHz to 41.0000 MHz -0.5 V to +7.0 V -0.3 V to +7.0 V 5.0 V ±0.5 V 3.3 V ±0.3 V -55 °C to +100 °C -20 °C to +70 °C Twice at under +260 °C within 10 s or under +230 °C within 3 min. C: ±100 x 10-6 17 mA Max. 35 mA Max. 9 mA Max. — 40 % to 60 % 40 % to 60 % 45 % to 55 % — 45 % to 55 % VDD -0.4 V Min. 2.4 V Min. VDD -0.4 V Min. -400 µA -8 mA -4 mA 0.4 V Max. 8 mA 4 mA 16 mA 20 pF Max.( ≤ 55 MHz) 15 pF 50 pF Max. 30 pF Max. 15 pF Max.( > 55 MHz) 5 LSTTL Max. 5 TTL Max. — 10 TTL Max. 2.0 V Min. 3.5 V Min. 0.8 VDD Min. 2.0 V Min. 0.8 V Max. 1.5 Max. 0.2 VDD Max. 0.8 V Max. 20 mA Max. 28 mA Max. 5 mA Max. 10 mA Max. — 5 ns Max. 7 ns Max. 5 ns Max. — — 5 ns Max. 7 ns Max. 5 ns Max. — 10 ms Max. ±5 x 10-6 /year Max. 4 ms Max. Remarks 4 ms Max. ±20 x 10-6 Max. Stored as bare product after unpacking No load condition C-MOS load: 1/2 VDD leve l TTL load: 1.4 V level _15 pF CL< IIH=1 µA Max.(OE=VDD)PTF.PTJ.PH IIL=-100 µA Min. (OE=GND) PTF.PH -500 µA Min. (OE=GND) PTJ OE=GND, ST=GND 2 µA Max.(SCE) C-MOS load: TTL load: C-MOS load: TTL load: 20 %→80 % VDD 0.4 V→2.4 V 80 %→20 % VDD 2.4 V→0.4 V Time at 4.5 V to be O s Ta=+25 °C,VDD=5 V,first year Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions Note: • Unless otherwise stated,characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition. • External by-pass capacitor is required. • Metal may be exposed on the top of this product. This won't affect any quality, reliability or electrical spec. (Unit: mm) NO. 10.5 Max. 5.0 5.8 Max. E 18.4320C 2.4 #3 2.7 Max. #4 PTF9352A 1 2 3 4 Pin terminal SG-636SCE SG-636P∗∗ ST OE GND GND OUT OUT VDD VDD 3.8 1.3 2.1 0.5 5.08 3.6 (1.0) 35 1.3 2.5 #2 #1 Recommended soldering pattern 2.1 External dimensions (1.0) (Unit: mm) Crystal oscillator Actual size Specifications (characteristics) Item Output frequency range Symbol f0 Frequency stability ∆f/f0 Current consumption Output disable current Output disable current C-MOS level Duty TTL level Iop IoE IST Output load condition (fan out) Output enable disable input voltage C-MOS level Output TTL level rise time C-MOS level Output TTL level fall time Oscillation start up time Aging Shock resistance SG-636PHW/SHW Specifications SG-636PCW/SCW Remarks 32.0001 MHz to 135.0000 MHz Power source Max. supply voltage VDD-GND VDD voltage Operating voltage TSTG Temperature Storage temperature TOPR range Operating temperature TSOL Soldering condition (lead part) Output voltage SG-636PTW/STW -0.5 V to +7.0 V 5.0 V±0.5 V 3.3 V±0.3 V -55 °C to +100 °C -20 °C to +70 °C Twice at under 260 °C within 10 s or under 230 °C within 3 min. B: ±50 x 10-6 C: ±100 x 10-6 45 mA Max. 30 mA Max. No load condition OE=GND(P*W) ST=GND(S*W) C-MOS load: 1/2VDD TTL load: 1.4 V IOH= -16 mA (*TW/HW)/-8 mA(*CW) IOL= -16 mA (*TW/HW)/8 mA(*CW) 28 mA Max. 16 mA Max. 50 µA Max. — 40 % to 60 % tw/t VOH VOL CL VIH VIL 40 % to 60 % — VDD-0.4 V Min. 0.4 V Max. 15 pF Max. 2.0 V Min. 0.8 V Max. — 4 ns Max. 4 ns Max. — — 4 ns Max. 4 ns Max. — tTLH tTHL 0.7 VDD Min. 0.2 VDD Max. 4 ns Max. — 4 ns Max. — OE,ST OE,ST C-MOS load: 20 %→80 % VDD TTL load: 0.4 V→2.4 V C-MOS load: 80 %→20 % VDD TTL load: 2.4 V→0.4 V Time at 4.5 V to be 0 s tOSC 10 ms Max. fa ±5 x 10-6/year Max. Ta=+25 °C, VDD =5 V ±20 x 10-6 Max. Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions S.R. Operating condition and Frequency band Operating condition 5 V±0.5 V 50 MHz 150 MHz 135 SG-636PTW/STW/PHW/SHW 2.21675 70 41 SG-636PTF SG-636PTJ/PH 135 SG-636PTW/STW/PHW/SHW 32 Frequency stability:B (-20 to +70 °C) Frequency stability:C ( -20 to +70 °C) 100 MHz 32 Frequency stability:B ( -20 to +70 °C) Frequency stability:C ( -20 to +70 °C) 3.3 V±0.3 V 1 MHz 135 SG-636PCW/SCW 2.21675 41 SG-636PCE/SCE 135 SG-636PCW/SCW 36