DG646BH25 Gate Turn-off Thyristor DS4092-5 July 2014 (LN31756) FEATURES KEY PARAMETERS Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction in VDRM IT(AV) ITCM dVD/dt dIT/dt 2500V 867A 2500A 1000V/µs 300A/µs Equipment Size and Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS Variable speed AC motor drive inverters (VSDAC) Uninterruptable Power Supplies High Voltage Converters Choppers Welding Induction Heating DC/DC Converters Outline type code: H (See Package Details for further information) Fig. 1 Package outline VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM (V) Repetitive Peak Reverse Voltage VRRM (V) DG646BH25 2500 16 Conditions Tvj = 125°C, IDM =50mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter ITCM Repetitive peak controllable on-state current IT(AV) Mean on-state current IT(RMS) RMS on-state current Conditions VD = VDRM, Tj = 125°C, dIGQ/dt = 40A/s, CS = 6.0 F THS = 80°C, Double side cooled. Half sine 50Hz THS = 80°C, Double side cooled. Half sine 50Hz Max. Units 2500 A 867 A 1360 A 1/1 www.dynexsemi.com DG646BH25 SEMICONDUCTOR SURGE RATINGS Symbol ITSM 2 It Parameter Test Conditions Max. Units Surge (non repetitive) on-state current 10ms half sine. Tj = 125°C 18.0 kA 10ms half sine. Tj = 125°C 16.2 MA s VD = 1500V, IT = 2000A, Tj = 125°C, IFG > 30A, Rise time > 1.0 s 300 A/s To 66% VDRM; RGK 1.5, Tj = 125°C 135 V/s To 66% VDRM; VRG -2V, Tj = 125°C 1000 V/s IT = 2000A, VDM = 2500V, Tj = 125°C, diGQ/dt = 40A/s, CS = 2.0F 200 nH 2 I t for fusing diT/dt Critical rate of rise of on-state current dVD/dt Rate of rise of off-state voltage LS Peak stray inductance in snubber circuit 2 GATE RATINGS Symbol Parameter Test Conditions Min. Max. Units This value may be exceeded during turn-off - 16 V 20 100 A Average forward gate power - 15 W Peak reverse gate power - 19 kW VRGM Peak reverse gate voltage IFGM Peak forward gate current PFG(AV) PRGM diGQ/dt Rate of rise of reverse gate current 30 60 A/s tON(min) Minimum permissible on time 50 - s tOFF(min) Minimum permissible off time 100 - s THERMAL AND MECHANICAL RATINGS Symbol Rth(j-hs) Parameter Thermal resistance – junction to heatsink surface Test Conditions Double side cooled Min. Max. Units DC - 0.018 °C/W Anode DC - 0.03 °C/W Cathode DC - 0.045 °C/W Per contact - 0.006 °C/W - 125 °C Single side cooled Rth(c-hs) Contact thermal resistance Clamping force 20.0kN With mounting compound Tvj Virtual junction temperature On-state (conducting) TOP/Tstg Operating junction/storage temperature range -40 125 °C Clamping force 18.0 22.0 kN Fm 2/2 www.dynexsemi.com DG646BH25 SEMICONDUCTOR CHARACTERISTICS Tj = 125°C unless stated otherwise Symbol Parameter Test Conditions Min . Max. Units VTM On-state voltage At 2000A peak, IG(ON) = 7A dc - 2.6 V IDM Peak off-state current VDRM = 2500V, VRG = 0V - 100 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25°C - 1.0 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25°C - 3.0 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy - 1188 mJ - 1.2 s VD = 1500V IT = 2000A, dIT/dt = 300A/s IFG = 30A, rise time < 1.0s td Delay time tr Rise time - 3.0 s Turn-off energy - 4000 mJ - 17.0 s - 2.0 s - 19.0 s - 6600 C EOFF tgs Storage time IT = 2000A, tgf Fall time VDM = 2500V, tgq Gate controlled turn-off time Snubber capacitor CS = 2.0F, QGQ Turn-off gate charge diGQ/dt = 40A/s QGQT Total turn-off gate charge - 13200 C IGQM Peak reverse gate current - 650 A 3/3 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.2 Maximum gate trigger voltage/current vs junction temperature Fig.3 On-state characteristics Maximum permissible turn-off current ITCM - (A) 3000 2500 2000 1500 Conditions: 125oC VDM = VDRM dIGQ/dt = 40A/us 1000 500 0 0 1 2 3 4 5 6 Snubber Capacitance Cs - (uF) Fig.4 Maximum dependence of ITCM on CS Fig.5 Steady state sinusoidal wave conduction loss – double side cooled 4/4 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.6 Surge (non-repetitive) on-state current vs time Fig.7 Steady state rectangular wave conduction loss – double side cooled Fig.8 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 5/5 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.9 Turn-on energy vs on-state current Fig.10 Turn-on energy vs peak forward gate current Fig.11 Turn-on energy vs on-state current Fig.12 Turn-on energy vs peak forward gate current 6/6 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.13 Turn-on energy vs rate of rise of on-state current Fig.14 Delay time & rise time vs turn-on current Fig.15 Delay time & rise time vs peak forward gate current Fig.16 Turn-off energy vs on-state current 7/7 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.17 Turn-off energy vs rate of rise of reverse gate current Fig.18 Turn-off energy vs on-state current Fig.19 Turn-off energy vs rate of rise of reverse gate current Fig.20 Turn-off energy vs on-state current 8/8 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.21 Gate storage time vs on-state current Fig.22 Gate storage time vs rate of rise of reverse gate current Fig.23 Gate fall time vs on-state current Fig.24 Gate fall time vs rate of rise of reverse gate current 9/9 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.25 Peak reverse gate current vs turn-off current Fig.26 Peak reverse gate current vs rate of rise of reverse gate current Fig.27 Turn-off gate charge vs on-state current Fig.28 Turn-off gate charge vs rate of rise of reverse gate current 10/10 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.29 Rate of rise of off-state voltage vs gate cathode resistance 11/11 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.30 General switching waveforms 12/12 www.dynexsemi.com DG646BH25 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 820g Clamping force: 20kN ±10% Lead coaxial, length: 600mm Package outline type code: H Fig.31 Package outline 13/13 www.dynexsemi.com DG646BH25 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale. 14/14 www.dynexsemi.com