DG306AE25 DG306AE25 Gate Turn-off Thyristor DS4099-5 January 2014 (LN31739) APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V 225A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt ■ Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies ■ High Voltage Converters ■ Choppers ■ Welding ■ Induction Heating ■ DC/DC Converters FEATURES ■ Double Side Cooling ■ High Reliability In Service ■ High Voltage Capability ■ Fault Protection Without Fuses ■ High Surge Current Capability ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements Outline type code: E. See Package Details for further information. VOLTAGE RATINGS Type Number DG306AE25 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 2500 16 Conditions Tvj = 125oC, IDM = 50mA, IRRM = 50mA, VRG = 2V CURRENT RATINGS Symbol Parameter Conditions Max. Units ITCM Repetitive peak controllable on-state current VD = 67%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 1.0µF 600 A IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 225 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 350 A 1/19 DG306AE25 SURGE RATINGS Symbol Parameter Conditions Max. Units ITSM Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 3.5 kA I2t I2t for fusing 10ms half sine. Tj =125oC 61250 A2s Critical rate of rise of on-state current VD = 2000V, IT = 600A, Tj = 125oC, IFG > 20A, Rise time > 1.0µs 300 A/µs To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 500 V/µs To 66% VDRM; VRG = -2V, Tj = 125oC 1000 V/µs 200 nH diT/dt dVD/dt LS Rate of rise of off-state voltage Peak stray inductance in snubber circuit - GATE RATINGS Symbol Parameter Conditions This value maybe exceeded during turn-off Min. Max. Units - 16 V VRGM Peak reverse gate voltage IFGM Peak forward gate current - 50 A PFG(AV) Average forward gate power - 10 W PRGM Peak reverse gate power - 6 kW diGQ/dt Rate of rise of reverse gate current 10 50 A/µs tON(min) Minimum permissable on time 20 - µs tOFF(min) Minimum permissable off time 40 - µs Min. Max. Units Double side cooled - 0.075 o Anode side cooled - 0.12 o Cathode side cooled - 0.20 o - 0.018 o - 125 o Operating junction/storage temperature range -40 125 o Clamping force 5.0 6.0 kN THERMAL RATINGS Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg - 2/19 Conditions Clamping force 6.0kN With mounting compound per contact C/W C/W C/W C/W C C DG306AE25 CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 600A peak, IG(ON) = 2A d.c. - 2.75 V IDM Peak off-state current VDRM = 2500V, VRG = 0V - 50 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 0.9 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 1.0 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 2000V - 515 mJ td Delay time IT = 600A, dIT/dt = 300A/µs - 1.5 µs tr Rise time IFG = 20A, rise time < 1.0µs - 3.0 µs Turn-off energy - 1000 mJ tgs Storage time - 11.4 µs tgf Fall time IT =600A, VDM = 2000V - 1.5 µs tgq Gate controlled turn-off time Snubber Cap Cs = 1.0µF, - 12.9 µs QGQ Turn-off gate charge diGQ/dt = 15A/µs - 1300 µC QGQT Total turn-off gate charge - 2600 µC IGQM Peak reverse gate current - 190 A EOFF 3/19 DG306AE25 2.0 2.0 1.5 1.5 1.0 1.0 VGT 0.5 Gate trigger current IGT - (A) Gate trigger voltage VGT - (V) CURVES 0.5 IGT 0 -50 -25 75 0 25 50 100 Junction temperature Tj - (°C) 0 125 Fig.1 Gate trigger voltage/curremt vs junction temperature Instantaneous on-state current - (A) 2000 Measured under pulse conditions IG(ON) = 2A Half sine wave 10ms 1500 Tj = 25°C Tj = 125°C 1000 500 0 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage - (V) Fig.2 Maximum limit on-state characteristics 4/19 5.0 6.0 DG306AE25 Maximum permissible turn-off current ITCM - (A) 1000 Conditions: Tj = 125°C, VDM = 1500V dIGQ/dt = 15A/µs 750 500 250 0 0.5 1.0 1.5 Snubber capacitance Cs - (µF) 2.0 dc 0.075 0.050 0.025 0 0.001 0.01 0.1 Time - s 10 1.0 Fig.4 Maximum (limit) transient thermal impedance - double side cooled 12.5 Peak half sine wave on-state current - (kA) Thermal impedance - °C/W Fig.3 Dependence of ITCM on Cs 10.0 7.5 5.0 2.5 0 0.0001 0.001 0.01 Pulse duration - (s) 0.1 1.0 Fig.5 Surge (non-repetitive) on-state current vs time 5/19 DG306AE25 Mean on-state power dissipation - (W) 800 700 dc Conditions; IG(ON) = 2A 180° 600 120° 500 60° 400 30° 300 200 100 0 0 100 200 300 Mean on-state current - (A) 350 65 70 80 90 100 110 120 Maximum permissible case temperature - (°C) 130 Mean on-state power dissipation- (W) Fig.6 Steady state rectangular wave conduction loss - double side cooled 600 Conditions; IG(ON) = 2A 500 180° 120° 90° 60° 400 30° 300 200 100 0 0 100 200 300 Mean on-state current - (A) 80 90 100 110 120 130 Maximum permissible case temperature - (°C) Fig.7 Steady state sinusoidal wave conduction loss - double side cooled 6/19 140 DG306AE25 Conditions: T = 25°C 350 j IFGM = 20A Cs = 1.0µF 300 Rs = 10 Ohms dI/dt = 300A/µs 250 dIFG/dt = 20A/µs VD = 2000V VD = 1500V 200 VD = 1000V 150 100 50 0 0 100 200 300 400 On-state current - (A) 500 600 Fig.8 Turn-on energy vs on-state current 500 450 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 400 400 350 VD = 2000V 300 250 VD = 1500V 200 VD = 1000V Conditions: IT = 600A, Tj = 25°C, Cs = 1.0µF, Rs = 10 Ohms, dIT/dt = 300A/µs, dIFG/dt = 20A/µs 150 100 0 10 20 30 40 50 60 70 Peak forward gate current IFGM- (A) 80 Fig.9 Turn-on energy vs peak forward gate current 7/19 DG306AE25 Turn-on energy loss EON - (mJ) 600 Conditions: T = 125°C 500 I j FGM = 20A Cs = 1.0µF 400 Rs = 10 Ohms dIT/dt = 300A/µs 300 VD = 2000V 200 VD = 1500V VD = 1000V 100 0 0 100 200 300 400 On-state current - (A) 500 600 Fig.10 Turn-on energy vs on-state current Conditions: IT = 600A Tj = 125°C Cs = 1.0µF Rs = 10 Ohms dIT/dt = 300A/µs dIFG/dt = 20A/µs 650 Turn-on energy loss EON - (mJ) 600 550 500 450 VD = 2000V 400 350 VD = 1500V VD = 1000V 250 0 10 20 30 40 50 60 70 Peak forward gate current IFGM- (A) Fig.11 Turn-on energy vs peak forward gate current 8/19 Conditions: I = 600A 500 T Tj = 125°C Cs = 1.0µF 450 Rs = 10 Ohms IFGM = 20A 400 350 300 VD = 2000V VD = 1500V 250 200 VD = 1000V 150 300 200 550 Turn-on energy loss EON - (mJ) 700 100 80 50 0 50 100 150 200 250 300 Rate of rise of on-state current dIT/dt - (A/µs) Fig.12 Turn-on energy vs rate of rise of on-state current 3.0 tr 2.5 2.0 td 1.5 1.0 Conditions: Tj = 125°C, IFGM = 20A Cs = 1.0µF, Rs = 10 Ohms, dIT/dt = 300A/µs, VD = 1500V 0.5 0 0 100 200 300 400 On-state current - (A) 500 600 Fig.13 Delay & rise time vs turn-on current 5.0 Turn-on delay time and rise time - (µs) Turn-on delay time and rise time - (µs) DG306AE25 Conditions: IT = 600A Tj = 125°C Cs = 1.0µF Rs = 10 Ohms dIT/dt = 300A/µs dIFG/dt = 20A/µs VD = 1500V 4.5 4.0 3.5 3.0 2.5 tr 2.0 1.5 1.0 td 0.5 0 0 10 20 30 40 50 60 70 Peak forward gate current IFGM- (A) 80 Fig.14 Delay time & rise time vs peak forward gate current 9/19 DG306AE25 550 Turn-off energy loss EOFF - (mJ) Conditions: Tj = 25°C 500 Cs = 1.0µF dIGQ/dt = 15A/µs 450 VDM = 2000V VDM = 1500V 400 VDM = 1000V 350 300 250 200 150 100 50 0 100 200 300 400 On-state current - (A) 500 600 Fig.15 Turn-off energy loss vs on-state current 575 VDM = 2000V Turn-off energy per pulse EOFF - (mJ) 550 525 500 VDM = 1500V 475 450 425 Conditions: IT = 600A Tj = 25°C Cs = 1.0µF 400 VDM = 1000V 375 350 10 15 20 25 30 35 40 45 50 Rate of rise of reverse gate current dIGQ/dt- (A/µs) Fig.16 Turn-off energy vs rate of rise of reverse gate current 10/19 DG306AE25 1000 VDM = 2000V Conditions: Tj = 125°C 900 Cs = 1.0µF dIGQ/dt = 15A/µs 800 Turn-off energy loss EOFF - (mJ) VDM = 1500V 700 VDM = 1000V 600 500 400 300 200 0 100 200 300 400 On-state current - (A) 500 600 Fig.17 Turn-off energy vs on-state current 1100 VDM = 2000V 1000 Turn-off energy per pulse EOFF - (mJ) 100 900 VDM = 1500V 800 700 Conditions: IT = 600A Tj = 125°C Cs = 1.0µF VDM = 1000V 600 10 15 20 25 30 35 40 45 50 Rate of rise of reverse gate current dIGQ/dt- (A/µs) Fig.18 Turn-off energy loss vs rate of rise of reverse gate current 11/19 DG306AE25 900 Cs = 1.0µF Cs = 1.5µF Turn-off energy per pulse EOFF - (mJ) 800 Conditions: T = 125°C 700 Vj = 1500V DM dIGQ/dt = 15A/µs 600 Cs = 2.0µF 500 400 300 200 100 0 0 100 200 300 500 400 On-state current - (A) 700 600 Fig.19 Turn-off energy vs on-state current 12.0 Gate storage time tgs - (µs) Conditions: Cs = 1.0µF 11.0 dI /dt = 15A/µs GQ Tj = 125°C 10.0 Tj = 25°C 9.0 8.0 7.0 6.0 5.0 4.0 0 100 200 300 400 On-state current - (A) Fig.20 Gate storage time vs on-state current 12/19 500 600 800 DG306AE25 17.5 Tj = 125°C Conditions: IT = 600A Cs = 1.0µF Gate storage time tgs - (µs) 15.0 12.5 10.0 7.5 Tj = 25°C 5.0 10 15 20 25 30 35 40 45 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Fig.21 Gate storage time vs rate of rise of reverse gate current 2.0 Conditions: Cs = 1.0µF dIGQ/dt = 15A/µs Tj = 125°C Gate fall time tgf - (µs) 1.5 1.0 Tj = 25°C 0.5 0.0 0 100 200 300 400 On-state current - (A) 500 600 Fig.22 Gate fall time vs on-state current 13/19 DG306AE25 2.0 Conditions: IT = 600A Cs = 1.0µF Gate fall time tgf - (µs) 1.5 Tj = 125°C 1.0 Tj = 25°C 0.5 0.5 10 15 20 25 30 35 40 45 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Fig.23 Gate fall time vs rate of rise of revese gate current Peak reverse gate current IGQM - (A) 200 Conditions: Cs = 1.0µF 175 dIGQ/dt = 15A/µs Tj = 125°C Tj = 25°C 150 125 100 75 50 25 0 0 100 200 300 400 On-state current - (A) 500 Fig.24 Peak reverse gate current vs on-state voltage 14/19 600 DG306AE25 300 Conditions: IT = 600A Cs = 1.0µF Tj = 125°C Peak reverse gate current IGQM - (A) 250 Tj = 25°C 200 150 100 10 15 20 25 30 35 40 45 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Fig.25 Reverse gate current vs rate of rise of reverse gate current 1375 Conditions: = 1500V V 1250 DM dIGQ/dt = 15A/µs Turn-off gate charge QGQ - (µC) 1125 Tj = 125°C 1000 Tj = 25°C 875 750 625 500 375 250 125 0 100 200 300 400 On-state current - (A) 500 600 Fig.26 Turn-off gatecharge vs on-state voltage 15/19 DG306AE25 1600 Turn-off gate charge QGQ - (µC) Tj = 125°C Conditions: IT = 600A Cs = 1.0µF 1400 Tj = 25°C 1200 1000 800 0 5 10 15 20 25 30 35 40 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Fig.27 Turn-off gate charge vs rate of rise or reverse gate current Rate of rise of off-state voltage dV/dt - (V/µs) 3000 VD =1500V 1000 100 50 10 1 10 Gate cathode resistance RGK - (Ohms) Fig.28 Typical rate of rise of off-state voltage vs gate cathode resistance 16/19 Anode voltage and current DG306AE25 0.9VD 0.9IT dVD/dt VD VD IT 0.1VD td Gate voltage and current 0.1IFG ITAIL VDP tgs tr tgf tgt dIFG/dt VDM tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate conditions: ITCM = 600A IFG = 20A IG(ON) = 2A d.c. tw1(min) = 10µs IGQM = 190A diGQ/dt = 15A/µs QGQ = 1300µC VRG(min) = 2.0V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms 17/19 DG306AE25 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 30° 15° 2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode) Cathode tab Cathode Ø42max Ø25nom. Gate 15 14 Ø25nom. Anode Nominal weight: 82g Clamping force: 6kN ±10% Leads 12 AWG cables 160mm Package outine type code: E ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 GTO gate drive units AN4571 Recommendations for clamping power semiconductors Use of V , r on-state characteristic AN4839 AN5001 Impoved gate drive for GTO series connections AN5177 TO 18/19 T IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale.