Presented

Smart Sensor ASIC for
Nuclear Power Monitoring
David Kerwin, Aeroflex Colorado Springs
Ken Merkel, Aeroflex Colorado Springs
Olivier Rouxel, Dimac Red S.R.L.
www.aeroflex.com/HiRel
Presented at ANIMMA - June 2013
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Outline: Smart Sensor ASIC
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Block Diagram
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Features
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Neutron Test Results
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Gamma Total Ionizing Dose (TID)
Results
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Temperature Results
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Summary
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Smart Sensor ASIC
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Sensor
Load
EXC_OUT_P
EXC_OUT_N
Reference
Generator
Excitation
Generator
EXT_CLK
Clock Reference
PLL_CNTL[1:0]
RBIAS
VREF_P/N
Smart Sensor IC
Block Architecture
DAC_VREF_P/N
UT08SC14ADV045HT Smart Sensor ASIC Block Diagram
Loop
Filter
Clock
Generator
MAIN_CLK
VREF_CM
EXC_CLK
ADC_SAMPLE_CLK
ADC_MOD_CLK
Digital
Core
∆-Σ
ADC
SPI Port
C
3
Excitation
Generator/
Mux
SPI Port
A
SPI Port A
GND_PROG
CORE_RESET
SPI Port C
RESET
TESTRESET
TESTEN
POR
SPI Port B
LVDS_EN
Signal
Conditioning
Control/
Status
Registers
SPI Port B
Sensors
(8 differential
channels)
Control/Status
to/from analog
OTEP
ROM
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UT08SC14ADV045HT Smart Sensor ASIC
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Complete Instrumentation System:
– Includes circuitry to excite and precisely measure the
response from 11 sensor types on 8 separate channels.
– Supported Sensors:
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Resistance Thermometer, Thermocouple, Linear Variable
Differential Transformer (LVDT), Strain Gauge/Load Cell,
Inductive and Transformer-based Position, Absolute and
Relative Pressure Sensors, Hall Effect Probe, Photodiode,
Accelerometer, Tachometer, and other types of Sensors.
– Excitation generator includes a 14-bit digital-to-analog
converter (DAC) with a high current, high-voltage
differential output.
– Eight high-voltage differential signal inputs are
provided, with configurable signal conditioning.
– 14-bit 45 kSps delta-sigma analog-to-digital converter
(ADC)
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UT08SC14ADV045HT Smart Sensor ASIC
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Complete Instrumentation System:
– Data I/O:
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Digital data word transmitted through a Low-Voltage
Differential Signaling, Serial Peripheral Interface (LVDS
SPI) port.
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A second LVDS SPI port is used for configuration, control,
parameter trim, and access to internal registers.
– Clock Generation:
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A clock generator block generates the necessary internal
clocks from a low-frequency reference.
– Voltage Regulators:
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Internal regulators derive necessary supply voltages and
references from +/-6V (Va6p and Va6n) and +3.3V (Vd3)
power supply inputs.
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UT08SC14ADV045HT Smart Sensor ASIC
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Complete Instrumentation System:
– Non-volatile Memory (NVM):
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Aeroflex Radiation Hardened One-Time Electrically
Programmable Read-Only Memory (RH OTEP ROM)
provides storage for reference trim data, configuration data,
and user configurable program storage.
– Applications:
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Nuclear Power Instrumentation Monitoring
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Spacecraft Telemetry
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Radiation Oncology Equipment Motor/Motion Control
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Nuclear Waste Monitoring
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Key Performance and Environmental Parameters
ASIC Specification
Excitation Output
Sensor Inputs
Signal Channel
A/D Converter
Typical channel mismatch
Requirement
14-bit DAC with differential voltage-mode output up to
20Vp-p, up to 140mA. Sine/square/triangle or arbitrary
function outputs.
8 multiplexed differential high-impedance user inputs; input
range -5V < Vin < +5V
Programmable gain range 0.18 to 100, 15 kHz bandwidth,
includes anti-alias filter
14-bit, 3rd-order delta-sigma, 45kSps
0.04% to 100°C, 0.07% to 200°C
Operating Environment
Requirement
Gamma Ray Total ionizing Dose (TID)
100 krad(Si) at a dose rate of 2.8 mrad(Si)/sec
Neutron Induced Upset (NIU)
Neutron induced Latch-Up (NIL)
Temperature
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< 1E-11 errors/bit/day
Immune (5E11 neutrons/cm2, peak energy < 2 MeV)
200 °C max. operating
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Neutron Induced Upset (NIU) Test Results
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Five Smart Sensor ASICs were tested at Sandia National
Laboratory (SNL) Annular Core Research Reactor
(ACRR).
Scan chains (≥ 95% coverage) were run at 2 MHz.
Lowest operational supply voltages used (95% of nom.).
Average neutron fluence: 6.9E11 n/cm2
No scan chain errors before, during or after irradiation →
No Neutron Induced Upset (NIU)
SNL’s ACRR
Smart Sensor Test PCB attached to Al holder
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Neutron Induced Latch-Up (NIL) Test Results
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Five Smart Sensor ASICs were tested at Sandia
National Laboratory’s ACRR Nuclear Reactor
Used valve position detector (VPD) config. with max.
output voltage swing (20V pk-pk), and highest
operational supply voltages to test for latch-up.
No Neutron Induced Latch-Up (NIL) observed!
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Average neutron fluence: 6.8E11 n/cm2
Worst case results:
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Supply current increased +6.7% (+6V power
supply). All other current increases ≤ 1.5%
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NIL Test PCB
All supplies returned to pre-irradiation values after
removal from reactor
Variation in sine wave replication was +/- 0.034%
Signal chain integrity demonstrated during NIL test and
measurement
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Neutron Induced Latch-Up (NIL) Test Results
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A 60 Hz sine wave was generated
and measured at the SPI-C port
Pre-Rad Supply Currents
Irradiation Supply Currents
No noticeable increase in power
supply currents during irradiation
Sine wave measurement used
768 samples taken at fclock = 46.08
kHz
The figure overlays the maximum
and minimum excursions of the
sampled sine wave in blue. Y-axis
in units of integer LSBs for the
internal 16-bit ADC. X-axis in
units of time for a single 60 Hz
sine wave with a 16.7 msec
period
(Sine wave“glitches” artifact of
look up table entries in EXCGEN,
not NIU or NIL)
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Gamma TID Results – Standard Dose Rate
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Quiescent current (Iddq) was measured on 5 ICs following steppeddose irradiation to 300 krad(Si) using standard dose rate (SDR)
gamma irradiation (169 rad(Si)/sec) at Aeroflex Colorado Springs
Iddq measured at low and high power supply settings following SDR
irradiation: +/- 6V => +/- 5.7 or +/- 6.3V, and 3.3V => 3.14 or 3.47V
No increase in Iddq up to a total ionizing dose (TID) of 300 krad(Si)
Demonstrates excellent control of MOSFET subthreshold leakage in
SDR gamma radiation
Iddq Results to 300 krad(Si) SDR
Iddq +6V Supply
Iddq -6V Supply
Iddq 3V Supply
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Gamma TID Results – Low Dose Rate
Iddq Results to 100 krad(Si) LDR
Iddq +6V Supply
Iddq -6V Supply
Iddq 3V Supply
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Iddq was measured at Aeroflex RAD on 5 ICs following steppeddose irradiation to 100 krad(Si) using low dose rate (LDR) gamma
irradiation at 10 mrad(Si)/sec
Iddq measured at low and high power supply settings following SDR
irradiation: +/- 6V => +/- 5.7 or +/- 6.3V, and 3.3V => 3.14 or 3.47V
No increase in quiescent current in TID up to 100 krad(Si)
Demonstrates excellent control of MOSFET subthreshold leakage
in gamma radiation at LDR
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Temperature Results
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Three ASICs subjected to an Extended Abnormal Temperature
(EAT) ramp for up to 960 hrs as defined below
Complete characterization test performed at intervals marked by *
Post-ramp results. All units passed all tests at room temperature
(RT) and at low and high supply extremes. No functional failures
observed at any temperature or at RT following thermal ramp
exposure
Parametric performance at high temperature generally tracks
voltage reference.
EAT Thermal
Ramp vs. Time
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Temperature Sweep Results
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Comprehensive characterization performed over 20 ≤ T ≤ 200 °C
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Absolute measurement accuracy ~1% at 180 °C, and ~5% at 200 °C
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Tracks bandgap reference
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Same reference used for excitation generator and ADC
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Relative/ratiometric error is ≤ 0.1% over entire temperature range
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Differential input leakage current < 10nA at 200 °C
Signal Input Differential Leakage Current
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Smart Sensor Parameters w.r.t. Temperature
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Summary
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Smart Sensor ASIC
– Specifically designed for Nuclear Power Radiation
Environment:
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> 100 krad(Si) in both Standard (SDR) and Low Dose-Rate
(LDR) Gamma Radiation Environment
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High Tolerance to Neutrons:
– Neutron Induced Latch-Up (NIL) Immune
– No Neutron Induced Upset (NIU)
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High Temperature operation up to 200 ⁰C
– High Functionality, Performance and Reliability in a
Single ASIC:
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8 sensor inputs
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14-bit ADC
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Programmable Gain
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20Vpp DAC Output for sensor excitation
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