Standard Products UT8SP2M32 64Megabit Pipelined SSRAM Preliminary Datasheet June 2015 The most important thing we build is trust FEATURES Synchronous SRAM organized as 2Meg words x 32bit Continuous Data Transfer (CDT) architecture eliminates wait states between read and write operations Supports 40MHz to 133MHz bus operations Internally self-timed output buffer control eliminates the need for synchronous output enable Registered inputs and outputs for pipelined operation Single 2.5V to 3.3V supply Clock-to-output time - Clk to Q = 7ns Clock Enable (CEN) pin to enable clock and suspend operation Synchronous self-timed writes Three Chip Enables (CS0, CS1, CS2) for simple depth expansion "ZZ" Sleep Mode option for partial power-down "SHUTDOWN" Mode option for deep power-down Four Word Burst Capability--linear or interleaved Operational Environment - Total Dose: 100 krad(Si) - SEL Immune: ≤ 100MeV-cm2/mg - SEU error rate: 1 x 10 -15 errors/bit-day with internal error correction Package options: - 288-lead CLGA, CCGA, and CBGA Standard Microelectronics Drawing (SMD) 5962-15212 - QMLQ and Q+ pending 36-00-01-007 Ver. 1.10.0 INTRODUCTION The UT8SP2M32 is a high performance 67,108,864-bit synchronous static random access memory (SSRAM) device that is organized as 2M words of 32 bits. This device is equipped with three chip selects (CS0, CS1, and CS2), a write enable (WE), and an output enable (OE) pin, allowing for significant design flexibility without bus contention. The device supports a four word burst function using (ADV_LD). The device achieves a very low error rate by employing SECDED (single error correction double error detection) EDAC (error detection and correction) scheme during read/ write operations as well as additional autonomous data scrubbing. The data scrubbing is performed in the background and is invisible to the user. All synchronous inputs are registered on the rising edge of the clock provided the Clock Enable (CEN) input is enabled LOW. Operations are suspended when CEN is disabled HIGH and the previous operation is extended. Write operation control signals are WE and FLSH_PIPE. All write operations are performed by internal self-timed circuitry. For easy bank selection, three synchronous Chip Enables (CS0, CS1, CS2) and an asynchronous Output Enable (OE) provide for output tri-state control. The output drivers are synchronously tri-stated during the data portion of a write sequence to avoid bus contention. -1- Cobham Semiconductor Solutions Aeroflex.com/Memories ADDR CMD User Command Interface Logic CLK Write Address and Command Queue Housekeeping, Scrub and Fault Logic Write Data Coherency Logic Pipeline Register Main Memory Array 2Meg x 52 Check Bit Generation Logic Stall Cycle Registers Write Data Steering Logic Error Detection and Corrections Logic Write Data Queue Read Data Steering and Fault Logic DIN QOUT Figure 1. UT8SP2M32 Block Diagram 36-00-01-007 Ver. 1.10.0 -2- Cobham Semiconductor Solutions Aeroflex.com/Memories Table 1: Pin Definitions NAME CS0 DESCRIPTION TYPE Chip Enable 0, Input, Active LOW: Sampled on the rising edge of CLK. Used in conjunction with CS1 and CS2 to select or deselect the device. Chip Enable 1 Input, Active HIGH: Sampled on the rising edge of CLK. Used in conjunction with CS0 and CS2 to select or deselect the device. Chip Enable 2 Input, Active LOW: Sampled on the rising edge of CLK. Used in conjunction with CS0 and CS1 to select or deselect the device. Input-Synchronous Address Inputs: Sampled at the rising edge of the CLK. A[1:0] is fed to the two-bit burst counter. Flush Pipeline Input, Active HIGH: Qualified with WE to conduct dummy writes to flush pipeline. Must be LOW during normal write operation. Input-Synchronous Write Enable Input, Active LOW: Sampled on the rising edge of CLK if CEN is active LOW. This signal must be enabled LOW to initiate a write sequence. Advance/Load Input: Advances the on-chip address counter or loads a new address. When HIGH (and CEN is enabled LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After deselection, drive ADV_LD LOW to load a new address. Input-Synchronous CLK Clock Input: Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. Input-Clock OE Output Enable, Asynchronous Input, Active LOW: Combined with the synchronous logic block inside the device to control the direction of the I/O pins. When LOW, the I/O pins are enabled to behave as outputs. When disabled HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state and when the device is deselected. Clock Enable Input, Active LOW: When enabled LOW, the clock signal is recognized by the SSRAM. When deasserted HIGH, the clock signal is masked. Because deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. Input-Asynchronous Bidirectional Data I/Os: As inputs, DQ[51:0] feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, DQ[51:0] delivers the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is enabled LOW, the pins behave as outputs. When HIGH, DQs are placed in a tri-state condition.The outputs are automatically tri-stated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. Aeroflex recommends connecting all DQ pins to either VDDQ or VSS through a >10kΩ resistor. Reset Input, Active Low: Resets device to known configuration. Reset is required at initial power-up, after exiting shutdown mode, or after any power interruption. I/O-Synchronous CS1 CS2 A[20:0] FLSH_PIPE WE ADV_LD CEN DQ[51:0]1 RESET 36-00-01-007 Ver. 1.10.0 -3- Input-Synchronous Input-Synchronous Input-Synchronous Input-Synchronous Input-Synchronous Input-ASynchronous Cobham Semiconductor Solutions Aeroflex.com/Memories Table 1: Pin Definitions NAME DESCRIPTION TYPE ZZ ZZ “Sleep” Input, Active HIGH: When HIGH, places the device in a nontime critical “sleep” condition with data integrity preserved. During normal operation, this pin must be LOW. Input-Synchronous Shutdown Input, Active HIGH: When HIGH, places device in shutdown mode. System clock can be stopped. Memory contents are not retained. Device Ready Output: READY outputs a HIGH when device is available for normal operations. READY outputs a LOW when requesting an idle cycle or during power up initialization. Input-Asynchronous SHUTDOWN READY2 Output-Synchronous MBE0 MBE1 MBEC Multiple Bit Error Flags: When LOW data is valid, when HIGH data is corrupt. Users can monitor either MBE0 and MBE1 or MBEC (combined). Output-Synchronous MODE3 Mode Input: Established at power up. Selects the burst order of the device. When tied to VSS selects linear burst sequence. When tied to VDDQ selects Input-DC EDACEN interleaved burst sequence. EDAC Enable Input: EDAC is enabled when HIGH. When LOW, allows for simple package pin disable of EDAC. Device pin internally connected through a 75kΩ±10% resistor to VDDQ. Input-DC SCRUBEN SCRUB Enable Input: Scrub mode is enabled when HIGH. When LOW, scrub mode is externally disabled. Device pin internally connected through a 75kΩ±10% resistor to VDDQ. Input-DC EXTRES3 Input-DC VDD Input Current Reference: Provided for external precision current reference resister connection. Operating Frequency Range Selection Input: Input should be HIGH for CLK input above 80MHz, LOW for CLK input at 80MHz and below. DC input and CLK frequency can only be changed during sleep mode or established at power on. Power supply inputs to the core of the device. VDDQ Power supply for the I/O circuitry. FREQSEL Power Supply I/O Power Supply VSS Ground inputs to the core of the device. VSSQ Ground for I/O circuitry. 36-00-01-007 Ver. 1.10.0 Input-DC Ground I/O Ground -4- Cobham Semiconductor Solutions Aeroflex.com/Memories NUIL Not used Input Low: Pins designated as NUIL need to be externally connected by user to VSSQ through a >10kΩ±10% resistor. -- NUIH Not used Input High: Pins designated as NUIH need to be externally connected by user to VDDQ through a >10kΩ±10% resistor. -- No Connects. Not internally connected to the die. --- NC TDO4 JTAG Circuit Serial Data Output: Package pin requires a pull-up through >10kΩ±10% resistor to VDDQ. JTAG Serial Output Synchronous TDI4 JTAG Circuit Serial Data Input: Device pin internally connected through a 75kΩ±10% resistor to VDDQ. JTAG Serial Input Synchronous TMS4 JTAG Controller Test Mode Select: Device pin internally connected through a 75kΩ±10% resistor to VDDQ. Test Mode Select Synchronous TCK4 JTAG Circuit Clock Input: Package pin requires a pull-up through >10kΩ±10% resistor to VDDQ. JTAG Clock Note: 1. DQ[51:32] are ignore during write and tri-stated during read activities unless EDACEN is deselected. (See Read Access Error Correction and Detection page 6). 2. Reference application note AN-MEM-004 for additional READY signal information. 3. DC inputs are established at power up and cannot be switched while power is applied to the device. 4. Reference application note AN-MEM-005 for JTAG operations. JTAG operations are intended for terrestrial use and not guaranteed in radiation environment. 36-00-01-007 Ver. 1.10.0 -5- Cobham Semiconductor Solutions Aeroflex.com/Memories DEVICE OPERATION The UT8SP2M32 is synchronous-pipelined SSRAM designed specifically to eliminate wait states during Write/Read or Read/ Write transitions. All synchronous inputs and outputs are registered on the rising edge of clock. The clock signal is enabled by the Clock Enable input (CEN). When CEN is HIGH, the clock signal is disregarded and all internal states are maintained. All synchronous operations are qualified by CEN. Once power-up requirements have been satisfied, the input clock may only be stopped during sleep (ZZ is HIGH) or shutdown mode (SHUTDOWN is HIGH). Maximum access delay from the rising edge of clock (tCQV) is 6.7ns (133 MHz device). four reads to be performed from a single address input. A new address can only be loaded when ADV_LD is driven LOW. New addresses are loaded into the SSRAM, as described by the Single Read Access section. The burst counter operates in either linear or interleave and is controlled by the MODE input at power up. When MODE pin is LOW, the burst sequence is linear. The burst sequence is interleaved when MODE is HIGH. A0 and A1 are controlled by the burst counter. Burst counter will wrap around when needed. The burst counter increments anytime ADV_LD is HIGH and CEN is low. The operation selected by the state of WE is latched at the beginning of the sequence and maintained throughout. Access is initiated by asserting all three Chip Enables (CS0, CS1, CS2) active at the rising edge of the clock with Clock Enable (CEN) and ADV_LD asserted LOW. The address presented to the device will be registered. Access can be either a Read or Write operation, depending on the status of the Write Enable (WE). Read Access Error Detection and Correction The UT8SP2M32 device features an embedded single error correction double error detection (SECDED) Aeroflex proprietary error correction scheme. Single bit errors are corrected during read accesses. Data corrections, to the core memory, occur during a separate data scrubbing activity. Double bit errors are detected and indicated by MBE0, MBE1 and MBEC. The MBE0 output is the multibit error indictor for the 16 even DQs. The MBE1 output is the multibit error indicator for 16 odd DQs. MBEC is the combined ORed result of MBE0 and MBE1. Either MBEC or MBE0 and MBE1 can be monitored to validate data. If all MBEx signals (MBEC, MBE0, MBE1) remain LOW during a data output cycle, the data is valid. If any of the MBE signal pins go active HIGH during a read activity, the data is invalid and contains an uncorrectable multibit error. Aeroflex recommends that all DQ pins be commonly connected to either VDDQ or VSSQ through Write operations are initiated by the Write Enable (WE) input. All write commands are controlled by built in synchronous self-timed circuitry. Three synchronous Chip Enables (CS0, CS1, CS2) and an asynchronous Output Enable (OE) simplify memory depth expansion. All operations (Reads, Writes, and Deselects) are pipelined. ADV_LD must be driven LOW once the device has been deselected in order to load a new address and command for the next operation. pull up/down resistors as DQ[51:0] must not be left floating. The upper 20 I/O pins DQ[51:32] are used for error code data storage, and need to be individually connected to soft pull ups or downs (refer to Table 4 external connections). When the EDAC is enabled via the EDACEN pin, the upper 20 data I/Os are ignored during write operations and tri-stated during read operations. When the EDAC is disabled, the upper 20 data I/ Os may be written and read the same as DQ[31:0]. Single Read Accesses A read access is initiated when the following device inputs are present at rising clock edge: CEN is enabled LOW, CS0, CS1, and CS2 are all enabled, the Write Enable input signal WE is disabled HIGH and ADV_LD is asserted LOW. The addresses present at the address inputs A[20:0] are registered and presented to the memory. Data propagates to the input of the output register. Data will be available to the bus 7ns after the next rising clock edge provided OE is enabled LOW. After the first clock of the read access, the output buffers are controlled by OE and the internal control logic. OE must be enabled LOW to drive requested data. During the next rising clock, any operation (Read/Write/Deselect) may be initiated. Device deselection is also pipelined. If any of the chip enables are false at rising edge of clock, the device outputs will tri-state after the following rising clock edge. Single Write Accesses A write access is initiated when the following device inputs are present at rising clock edge: CEN is enabled LOW, CS0, CS1, and CS2 are all enabled, the Write Enable input signal WE is enabled LOW and ADV_LD is asserted LOW. The addresses present at the address inputs A[20:0] are registered and presented to the memory core. Data I/Os are tri-stated after the next rising edge of clock regardless of state of OE. This allows the external logic to present the data on all DQ. The write is completed after the next rising clock edge using data Burst Read Accesses The UT8SP2M32 has an internal burst counter allowing up to 36-00-01-007 Ver. 1.10.0 -6- Cobham Semiconductor Solutions Aeroflex.com/Memories present on DQ lines. During a write operation, data is qualified by the FLSH_ PIPE input. Input data at DQ[51:0] is registered when FLSH_PIPE is LOW in conjunction with an active WE, but ignored when FLSH_PIPE is HIGH with an active WE. In either state of FLSH_PIPE, commands are shifted through the register pipeline. operations. Dummy write operations can be performed using the FLSH_PIPE input. Because data coherency is always maintained and the SEU error rate includes the pipeline registers, flushing the pipeline is not necessary. Sleep Mode The ZZ input lead is a synchronous input. Asserting the ZZ pin HIGH places the SSRAM into a power conservative "sleep" mode. To assure the completion of previous commands and through the pipeline prior to entering sleep mode, a minimum of two full clock cycles (tZZS) are required between the last To avoid bus contention data should not be driven to DQs when outputs are active. The Output Enable (OE) may be disabled HIGH before applying data to the DQ lines. This will tri-state the DQ output drivers. As an additional feature DQ lines are automatically tri-stated during the data portion of a Write cycle, regardless of the state of OE. operation command and asserting the ZZ input. While in sleep mode, data integrity is guaranteed. Changing the input clock frequency or halting the input clock may be executed during sleep mode. The device must be deselected prior to entering sleep mode and remain deselected for the duration of tZZREC Burst Write Accesses The UT8SP2M32 has an internal burst counter allowing up to four writes to be performed from a single address input. A new address can only be loaded when ADV_LD is driven LOW. New addresses are loaded into the SSRAM, as described in the Single Write Access section. When ADV_LD is driven HIGH on the subsequent clock rise, where CEN is LOW, the Chip Enables (CS0, CS1, CS2) and WE inputs are ignored and the burst counter is incremented. The FLSH_PIPE input must be LOW in each cycle of the burst write in order to write the correct data. after the ZZ input returns LOW. Shutdown Mode The SHUTDOWN input pin is an asynchronous input. Asserting SHUTDOWN places the device in a power saving shutdown mode. The system clock can be stopped. Memory contents are not maintained in shutdown mode. The SSRAM requires a reset cycle upon exiting shutdown mode. Table 3. Interleaved Burst Address Table (MODE=VSS) READY Status The UT8SP2M32 device operates as a Synchronous SRAM device. Data integrity housekeeping activities are performed in the background during normal user activity. These housekeeping activities are performed on a regular basis. However, when a housekeeping activity sequence cannot be completed due to user conflict for memory space, the READY pin asserts signifying to the user that an idle cycle is required. Please reference applications note AN-MEM-004 for more information. Data Scrubbing The UT8SP2M32 device employs internal autonomous data scrubbing. The scrub circuit cycles through all address spaces typically once every 0.5 seconds. Scrub cycles occur anytime power is applied to the device provided SCRUBEN is HIGH. When the EDAC circuit is disabled via EDACEN input LOW, DQ[51:32] pins are available for read and write accesses. However if the scrub is not additionally disabled, data written to DQ[51:32] could possibly be changed by the internal data scrubbing activity. Second Address Third Address Fourth Address A1, A0 A1, A0 A1, A0 A1, A0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 Table 3. Interleaved Burst Address Table (MODE=VDDQ) FLSH_PIPE The write operation consists of three register stages. Writing data to the core memory requires three subsequent write 36-00-01-007 Ver. 1.10.0 Starting Address -7- Starting Address Second Address Third Address Fourth Address A1, A0 A1, A0 A1, A0 A1, A0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 Cobham Semiconductor Solutions Aeroflex.com/Memories Power Up/ Down Requirements The SSRAM requires that VDD < VDDQ at all times. The SSRAM does require the user to provide an external reset after initial power application, exiting shutdown mode, or any power interruption to the device input voltage outside the specified limit. Performing a reset requires the assertion of the /RESET device input lead (LOW) for a minimum of 1us (tRLRH). After the /RESET input is returned HIGH, the device requires 50us (tSHTDWNREC) to complete the reset operation. Once the reset operation is complete, the device requires an additional 20us (tCR) to synchronize the clock input, providing a stable input clock is present. The device READY output lead asserts HIGH once tCR is satisfied at the next rising clock. The READY out lead HIGH indicates the device is available for normal operations. For power down it is required that VDD and VDDQ be powered down to <0.5V for a minimum of 100ms. External Connections A precision 25kohm < +0.2% low TCR < 25ppm/oC resistor is required to be connected between device pin EXTRES (R15) and VSS. In order to ensure proper operation in conjunction with JTAG boundary (reference applications note MEM-AN-005) and EDAC bypass capabilities, Aeroflex requires that specific package pins be biased through soft connections to either VDD, VDDQ or VSS. Table 4 below is a list of these required external biases. Table 4. External Bias Conditions Signal Name NUIL1 Clock Conditioning Requirements The CLK signal input requirements are given in the Clock section of the AC Characterizations. AC Characterization performances listed herein are based on providing a clock input signal meeting these requirements. NUIH2 TDO TCK DQ[51:0]3 Bias Condition >10kΩ to VSSQ >10kΩ to VDDQ >10kΩ to VDDQ >10kΩ to VSSQ >10kΩ to VDDQ or VSSQ Changing Clock Frequencies In order to optimize the UT8SP2M32 device operation, users are required to establish the FREQSEL pin state to a logic HIGH for CLK input frequencies > 80MHz and a logic LOW for CLK input frequencies of ≤ 80MHz. The CLK input frequency and FREQSEL pin state are established at power on. Both may only be changed while in SLEEP mode (reference Table 5). 36-00-01-007 Ver. 1.10.0 Package Pin P13, R7, R8, R12, R16 P16, R13 R5 R9 ref Table 6 Notes: 1. NUIL = Not Used Input Low 2. NUIH = Not Used Input High 3. Aeroflex recommends connecting all DQ[51:0] to either VDDQ or VSSQ through >10kΩ resistors. -8- Cobham Semiconductor Solutions Aeroflex.com/Memories Table 5: Truth Table for UT8SP2M32 [1,2,3,4,5,6,7] Address Used CSx* ZZ SHUT DOWN ADV_LD WE FLSH_ PIPE OE CEN CLK DQs Standby Mode None H L L L X X X L L-H 3-State Continue Deselect None X L L H X X X L L-H 3-State Read Cycle (Start Burst) External L L L L H X L L L-H Data Out Read Cycle (Cont. Burst) Next X L L H X X L L L-H Data Out NOP/Dummy Read (Start) External L L L L H X H L L-H 3-State NOP/Dummy Read (Cont.) Next X L L H X X H L L-H 3-State Write Cycle (Start Burst) External L L L L L L X L L-H Data In Write Cycle (Cont. Burst) Next X L L H X L X L L-H Data In Dummy Write (Start) None L L L L L H X L L-H 3-State Dummy Write (Cont. Burst) Next X L L H X H X L L-H 3-State Clock Inhibit (Stall) N/A X L L X X X X H L-H N/A Sleep Mode N/A H H L X X X X X X 3-State Shutdown Mode None X X H X X X X X X 3-State Operation Notes: * All chip selects active when L, at least one chip select inactive when H 1. X = “Don't Care”, H = Logic HIGH, L = Logic LOW. 2. Write is defined by WE and FLSH_PIPE. 3. When a Write cycle is detected, all I/Os are tri-stated. 4. The DQ pins are controlled by the current cycle and the OE signal. 5. CEN = H inserts wait states. 6. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE. 7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle DQs = tri-state when OE is inactive or when the device is deselected and DQs= data when OE is active. 36-00-01-007 Ver. 1.10.0 -9- Cobham Semiconductor Solutions Aeroflex.com/Memories Table 6. 288-Lead Pipelined Signal Locations 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 VDDQ CS2 WE VSS A10 A8 A4 A18 A19 A14 A15 A2 A0 CS0 VSS VSS VSS OE VSS A11 A9 A6 A17 VSS A20 A16 A13 A12 A1 ZZ VSS SHUT DOWN VSS C VDDQ VSSQ VSS READY FLSH_ PIPE VSS A7 A5 VSS VDD VSS VSSQ VDD VDD A3 ADV_LD CS1 VSS VSSQ D DQ33 DQ35 VDD VSS VSS VDD VDD VSS VDD VDD VSSQ VDDQ VDD VSS VSS VDD VDDQ DQ32 E DQ37 DQ1 DQ39 VDD VSSQ VSS VSS VSS VSS VSSQ VDDQ VSS VSS VSSQ VDD DQ38 DQ36 DQ34 F DQ3 DQ5 DQ7 VDDQ VDDQ VSSQ VSS VSS VDD VSS VDD VSS VSS VDDQ VSSQ VDDQ VDDQ DQ4 DQ0 DQ2 G DQ9 DQ11 DQ13 VDD VSSQ VDD VDDQ VDD VSS VDD VSS VDD VDDQ VSSQ VDD VSSQ VDD DQ10 DQ6 DQ8 H MBE1 DQ15 CEN VSS VSS VDD VDD VDD VSS VSS VSS VDD VDD VSS VSS VSS VSS CLK DQ12 MBE0 J VDD VSS VDD VSS VDD VSS VSSQ VDD VSSQ VDD DQ14 DQ16 DQ18 VDDQ VDD VSS VDD VDDQ VSS VDDQ VSSQ VDDQ VDDQ DQ20 DQ24 DQ22 A B VSS VDDQ VSSQ VSSQ VDDQ DQ19 DQ17 DQ21 VDD VSSQ VDD VSS K DQ27 DQ25 DQ23 VDDQ VDDQ VSSQ VSS L DQ31 DQ41 DQ29 VDD VSSQ VSS M DQ45 DQ47 DQ43 VDD N DQ51 DQ49 VSS VSS P R 19 20 VDD VSSQ VDDQ VSS VSS VSS VSSQ VDDQ VSS VSS VSSQ VDD DQ26 DQ30 DQ28 VSS VSSQ VDDQ VSSQ VDD VSS VDD VDD VSSQ VDDQ VSSQ VSS VDD DQ40 DQ44 DQ42 VSS VDD VDDQ VSSQ VDD VSS VDD VSS VSS VDD VSSQ VSSQ VDD VSS DQ46 DQ48 DQ50 VSS VDD SCRUB EN VSSQ VSSQ VSSQ VSS VSS EDACEN TMS NUIH4 VSSQ VSS VSS VDD TDI TDO1 VDD NUIL3 NUIL3 TCK2 MBEC RESET NUIL3 NUIH4 FREQ SEL EXTRES NUIL3 VDDQ VDD VDDQ MODE NUIL3 Notes: 1. Pin requires pull-up to VDDQ of >10kΩ±10%. 2. Pin requires pull-down to VSS of >10kΩ±10%. 3. NUIL = Not used Input Low. NUIL pins requires >10kΩ±10% pull-down to VSSQ. 4. NUIH = Not Used Input High. NUIH pins requires >10kΩ + 10% pull-up to VDDQ. 36-00-01-007 Ver. 1.10.0 - 10 - Cobham Semiconductor Solutions Aeroflex.com/Memories ABSOLUTE MAXIMUM RATINGS1 (Referenced to VSS) SYMBOL VDD/VDDQ PARAMETER Supply Voltage2 VALUE UNIT -0.5 to 4.0 V -0.3 to VDDQ+0.3 V VIN Voltage on any pin2 IIO DC I/O current per pin @ TJ = 135o for 15 years +10 mA PD Package power dissipation permitted @ TC = 105°C3 15 W TJ Maximum junction temperature ΘJC Thermal resistance junction to case TSTG Storage temperature o +150 3 -65 to +150 C o C/W o C Notes: 1. Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation should be restricted to recommended operating conditions. 2. All voltages are referenced to VSS. 3. Per MIL-STD-883, Method 1012, Section 3.4.1 PD = (TJ(max) - TC(max)) ΘJC OPERATIONAL ENVIRONMENTS1 PARAMETER Total Ionizing Dose (TID) Heavy Ion Error Rate Single Event Latchup (SEL) immune2 LIMIT UNITS 100K rad(Si) 1x10-15 Errors/Bit-Day ≤ 100 MeV-cm2/mg Notes: 1. Adams 90% worst case environment, Geosynchronous orbit, 100mils of aluminum 2. Temperature = 105oC; VDD and VDDQ = 3.6V RECOMMENDED OPERATING CONDITIONS SYMBOL LIMITS VDD Core supply voltage 2.3V to VDDQ VDDQ I/O power supply voltage 2.3V to 3.6V TC Case temperature range VIN DC input voltage TJ 36-00-01-007 Ver. 1.10.0 PARAMETER Junction Temperature - 11 - -55°C to +105°C 0V to VDDQ -55°C to +125°C Cobham Semiconductor Solutions Aeroflex.com/Memories DC ELECTRICAL CHARACTERISTICS (Pre and Post-Radiation)* (VDD= 2.3V to VDDQ, VDDQ = 2.3 to 3.6V; Unless otherwise noted, Tc is per the temperature range ordered) PARAMETER DESCRIPTION CONDITION MIN MAX UNIT VDD Core Power Supply Voltage 2.3 VDDQ V VDDQ I/O Power Supply Voltage 2.3 3.6 V VOH Output HIGH Voltage VOL VIH VIL Output LOW Voltage Input HIGH Voltage Input LOW Voltage For 3.0V I/O, IOH=-4mA 0.8 * VDDQ V For 2.3V I/O, IOH=-1mA 2.0 V For 3.0V I/O, IOL=8mA 0.4 V For 2.3V I/O, IOL=1mA 0.4 V For 3.0V I/O 2.0 V For 2.3V I/O 1.7 V For 3.0V I/O 0.8 V For 2.3V I/O 0.7 V 2 μA 2 μA IIN1 Input Leakage Current VIN = VDDQ and VSS Except device pins EDACEN, TDI, TMS, SCRUBEN IIN2 Input Leakage Current VIN = VDDQ -2 Device pins EDACEN, TDI, TMS, SCRUBEN VIN = VSS Device pins EDACEN, TDI, TMS, SCRUBEN μA -100 Three-State Output Leakage Current VDD, VDDQ = (Max), VO = VDDQ and VSS, OE = VDDQ (Max) -2 2 μA IOS1,2 Short-Circuit Output Current VDD, VDDQ = (Max), VO = VDDQ and VSS -100 100 mA IDD3 VDD Supply Current in Active Mode VDD, VDDQ = (Max), IOUT = 0mA, 105oC 900 mA -55oC and 25oC 750 mA 105oC 100 mA -55oC and 25oC 100 mA 105oC 250 mA -55oC and 25oC 200 mA IOZ f = fmax IDDQ3 VDDQ Supply Current in Active Mode VDD, VDDQ = (Max), IOUT = 0mA, f = fmax ISHTDWN3 36-00-01-007 Ver. 1.10.0 VDD Supply Current in Shutdown Mode VDD, VDDQ = (Max), VIN > VIH or VIN < VIL, SHUTDOWN > VIH - 12 - Cobham Semiconductor Solutions Aeroflex.com/Memories ISHTDWNQ3 ISTBY3 105oC 15 mA VIN > VIH or VIN < VIL, SHUTDOWN > VIH -55oC and 25oC 15 mA VDD, VDDQ = (Max), VIN > VIH or VIN < VIL, 105oC 650 mA -55oC and 25oC 500 mA 105oC 100 mA -55oC and 25oC 100 mA 105oC 500 mA -55oC and 25oC 350 mA 105oC 85 mA -55oC and 25oC 85 mA VDDQ Supply Current in Shutdown Mode VDD, VDDQ = (Max), VDD Supply Current in Standby Mode f = fmax, device deselected ISTBYQ3 IZZ3 IZZQ3 VDDQ Supply Current in Standby Mode VDD, VDDQ = (Max), VIN > VIH or VIN < VIL, f = fmax, device deselected VDD Supply Current in Sleep Mode VDD, VDDQ = (Max), VIN>VIH or VIN < VIL, ZZ > VIH, SHUTDOWN < VIL VDDQ Supply Current in Sleep Mode VDD, VDDQ = (Max), VIN>VIH or VIN < VIL, ZZ > VIH, SHUTDOWN < VIL CAPACITANCE SYMBOL PARAMETER MIN MAX UNIT CIN4 Input Capacitance 15 pF CI/O4 I/O Capacitance 15 pF Notes: * For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25oC per MIL-STD-883 Method 1019, Condition A up to the maximum TID level procured. 1. Supplied as a design limit but not guaranteed nor tested. 2. Not more than one output may be shorted at a time for maximum duration of one second. 3. Post-irradiation limits are the 105oC limits when specified. 4. Measured only for initial qualification and after process or design changes that could affect this parameter. 36-00-01-007 Ver. 1.10.0 - 13 - Cobham Semiconductor Solutions Aeroflex.com/Memories AC CHARACTERISTICS (Pre and Post-Radiation)* (VDD= 2.3V to VDDQ, VDDQ = 2.3 to 3.6V; Unless otherwise noted, Tc is per the temperature range ordered.)1 PARAMETER DESCRIPTION MIN MAX UNIT VDD to first valid command (READ or WRITE) 100 tCYC Clock (CLK) cycle time 7.5 25.0 ns tCH CLK HIGH time 0.4 * tCYC 0.6 * tCYC ns tCL CLK LOW time 0.4 * tCYC 0.6 * tCYC ns tPowerup2 ms Clock tr, tf2 tclkPJ3,5 tclkCCJ3,5 Input clock rise/fall time (10-90%) 2.25 Input clock period jitter -100 Input clock cycle to cycle jitter V/ns 100 ps 150 ps Setup Times tAS Address setup time prior to CLK 2.5 ns tDS Data setup time prior to CLK 1.5 ns tCENS Clock enable setup (CEN) time prior to CLK 3 ns tWES Write enable (WE) setup time prior to CLK 3 ns 2.5 ns 3 ns tADVLDS tCSS Advance load (ADV_LD) setup time prior to CLK Chip select (CSx) setup time prior to CLK Hold Times tAH Address hold time after CLK 1.2 ns tDH Data hold time after CLK 1.4 ns tCENH CEN hold time after CLK 1.2 ns tWEH WE hold time after CLK 1.5 ns ADV_LD hold time after CLK 0.9 ns CSx hold time after CLK 1.8 ns tADVLDH tCSH Output Times 36-00-01-007 Ver. 1.10.0 tCQV4 Data valid after rising CLK tOEQV4 Output enable (OE) active to data valid tCQOH Data output hold time after rising CLK tCQZ5 Rising CLK to output three-state time tCQX5 Rising CLK to output enable time - 14 - 7 ns 4.0 ns 2.0 ns 5.0 1.3 ns ns Cobham Semiconductor Solutions Aeroflex.com/Memories tOEQZ5 OE inactive to output three-state time 4.5 tOEQX5 OE active to output enable time tCMV14 MBE0/MBE1 valid after rising clk 7 ns tCMV24 MBEC valid after rising clk 9 ns tOEMV14 OE active to MBE0/MBE1 valid 4.0 ns tOEMV24 OE active to MBEC valid 4.5 ns tCMZ15 Rising CLK to MBE0/MBE1 three-state time 4.5 ns tCMZ25 Rising CLK to MBEC three-state time 4.5 ns tCMX15 Rising CLK to MBE0/MBE1 enable time 1.4 ns tCMX25 Rising CLK to MBEC enable time 1.4 ns tOEMZ15 OE inactive to MBE0/MBE1 three-state time 4.5 ns tOEMZ25 OE inactive to MBEC three-state time 5.5 ns tOEMX15 OE active to MBE0/MBE1 enable time 0 ns tOEMX25 OE active to MBEC enable time 0 ns 0 ns ns Notes: * For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25oC per MIL-STD-883 Method 1019, Condition A up to the maximum TID level procured 1. AC Characteristics based on compliance with CLOCK input specifications 2. Supplied as a design guideline, not tested or guaranteed. 3. Period and Cycle to Cycle jitter is defined by JEDEC Standard 65B 4. Maximum data output valid times guaranteed up to 25pf load capacitance. For loads >25pf, a derating factor of parameter = [specification max(ns) + (CLoad 25pF)(44.2ps/pF]. 5. Guranteed by design. 36-00-01-007 Ver. 1.10.0 - 15 - Cobham Semiconductor Solutions Aeroflex.com/Memories SHUTDOWN AND SLEEP MODE CHARACTERISTICS (Pre and Post-Radiation)* (VDD= 2.3V to VDDQ, VDDQ = 2.3 to 3.6V; Unless otherwise noted TC is for temperature range ordered.) PARAMETER DESCRIPTION CONDITION MIN MAX UNIT tZZS3 Device operation to SLEEP mode ΖΖ > VIH 2 tCYC ns tZZH3 SLEEP high pulse width ΖΖ > VIH 100 μs tZZL3 SLEEP low pulse width ΖΖ < VIH 100 μs Device operation to SHUTDOWN SHUTDOWN > VIH 2 tCYC ns SLEEP recovery time STANDBY < VIL 100 + (3*tCYC) ns SHUTDOWN recovery time SHUTDOWN < VIL Active to SLEEP current ΖΖ > VIH Active to SHUTDOWN current SHUTDOWN > VIH tRZZI4 Time to exit SLEEP current mode STANDBY < VIL 0 ns tRSHTDWNI4 Time to exit SHUDOWN current mode SHUTDOWN < VIL 0 ns tCR1,2,3 Clock recovery prior to exiting ZZ ΖΖ > VIH tRLRH RESET low to high time Shutdown < VIL tPDS3 tPDH3 tSHTDWNS3 tZZREC3 tSHTDWNREC1,3 tZZI4 tSHTDWNI4 50 us 100 + (3*tCYC) ns 250 ns 20 μs 1 μs SLEEP setup time prior to CLK 2.0 ns SLEEP hold time after CLK 0.5 ns Notes: * For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25oC per MIL-STD-883 Method 1019, Condition A up to the maximum TID level procured 1. The clock must start up prior to exiting sleep or shutdown modes. Parameter is guaranteed by design. 2. TCR is necessary anytime the clock is stopped, after initial power on, or exiting shutdown mode. 3. Tested functionally. 4. Guaranteed by design. 36-00-01-007 Ver. 1.10.0 - 16 - Cobham Semiconductor Solutions Aeroflex.com/Memories tCYC tCL CLK Command Bus tCH 64th non- idle cycle 65th non- idle cycle non- idle cycle non- idle cycle non- idle cycle non- idle cycle non- idle cycle non- idle cycle Idle cycle Any cycle Any cycle tCQV 16 cycles MAX READY Any cycle tCQV Figure 3. Switching Waveform for Internal Housekeeping tCR CLK tZZH tRZZI tZZS ZZ tZZL tZZI tPDH tPDS Command Bus tZZREC RD/ WR RD/ WR Deselect cycle RD/ WR Figure 4. Switching Waveform for SLEEP Mode CLK tRSHTDWNI tSHTDWNS tSHTDWNREC SHUTDOWN Command Bus tCR tSHTDWNI RD/ WR RD/ WR Deselect cycle tRLRH RESET Figure 5. Switching Waveform for SHUTDOWN Mode CLK Power-up tSHTDWNREC SHUTDOWN Command Bus Deselect cycle tCR RD/ WR RD/ WR tRLRH RESET READY Figure 6. Switching Waveform for Power-Up 36-00-01-007 Ver. 1.10.0 - 17 - Cobham Semiconductor Solutions Aeroflex.com/Memories 36-00-01-007 Ver. 1.10.0 - 18 - Cobham Semiconductor Solutions Aeroflex.com/Memories tCH 2 A0 tAH READ Q(A0) tAS 3 tOEQX WRITE D(A0) tCQZ Q(A0) tCMZ1,2 Q(A0) 4 5 A1 tADVLDH 6 READ Q(A1) D(A0) tDS tDH tADVLDS BURST STALL WRITE CYCLE D(A0+1) tOEMX1,2 tOEMV1,2 tOEQV A0 tWES tWEH tCSS tCSH tCYC tCENS tCENH tCL READ Q(A0) D(A0+1) A0 7 Q(A1) Q(A1) 9 tOEQZ Q(A1) tCQX Figure 7. Switching Waveforms for Pipelined Cycle Operations tCQV tCMV1,2 Q(A1) tCMX1,2 A2 10 WRITE D(A2) tOEMZ1,2 STALL STALL CYCLE CYCLE 8 Notes: 1. CS1 has timing transitions identical to CS0b and CS2b, but is inverted logically. For example, when CS0b and CS2b are LOW, CS1 is HIGH. CHIP LEVEL STALL COMMAND CYCLE MBE0 MBE1 MBEC QOUT /OE DIN ADDR FLSH_PIPE /WE ADV/LDB /CS0, /CS2 1 /CEN CLK 1 READ Q(A2) Q(A0) Q(A0) tCQOH A2 11 Q(A2) Q(A2) 13 DEWRITE SELECT D(A3) CYCLE D(A2) A3 12 VDD VDD RTERM 100ohm CL = 40pF DUT Test Point Zo = 50ohm RTERM 100ohm VDD2 VSS 90% 90% 10% > 2.25V/ns 10% CMOS Input Pulses > 2.25V/ns Notes: 1. Measurement of data output occurs at the low to high or high to low transition mid-point (i.e., CMOS input = VDD2/2 Figure 8. AC Test Loads and Input Waveforms 36-00-01-007 Ver. 1.10.0 - 19 - Cobham Semiconductor Solutions Aeroflex.com/Memories PACKAGING Figure 9. 288-Lead CCGA 36-00-01-007 Ver. 1.10.0 - 20 - Cobham Semiconductor Solutions Aeroflex.com/Memories PACKAGING Figure 10. 288-Lead CLGA 36-00-01-007 Ver. 1.10.0 - 21 - Cobham Semiconductor Solutions Aeroflex.com/Memories PACKAGING Figure 11. Advanced 288-lead CBGA, Ball dimensions (A, A1, A2) are subject to change 36-00-01-007 Ver. 1.10.0 - 22 - Cobham Semiconductor Solutions Aeroflex.com/Memories ORDERING INFORMATION 2M x 32 SSRAM UT ******* - * * * * Lead Finish: (Note 1) (C) = Gold (A) = Solder Screening: (Notes 2, 3) (F) = HiRel Flow (Temperature Range: -55°C to +105°C) (In development, contact factory) (P) = Prototype Flow (Temperature Range: 25oC only) Package Type: (Z) = 288-Lead Ceramic Land Grid Array (CLGA) (S) = 288-Lead Ceramic Column Grid Array (CCGA) (C) = 288-Lead Ceramic Ball Grid Array (CBGA) Access Time: (M) = 133MHz Maximum Frequency Device Type: (8SP2M32) = 2Mbit x 32 SSRAM Device Notes: 1. Lead finish is per the table below. 2. Prototype Flow per Aeroflex Manufacturing Flows Document. Devices are tested at 25oC only. Radiation is neither tested nor guaranteed. 3. HiRel flow per Aeroflex Manufacturing Flows Document. Radiation is neither tested nor guaranteed. 36-00-01-007 Ver. 1.10.0 Package Option Associated Lead Finish Option (Z) 288-CLGA (C) Gold (S) 288-CCGA (A) Hot Solder Dipped (C) 288-CBGA (A) Hot Solder Dipped - 23 - Cobham Semiconductor Solutions Aeroflex.com/Memories 2M x 32 SSRAM: SMD 5962 * ***** ** * * * Lead Finish: (Note 1) (C) = Gold (F) = Solder Case Outline: (X) = 288-Lead Ceramic Land Grid Array (CLGA) (F) = 288-Lead Ceramic Column Grid Array (CCGA) Class Designator: (Q) = QML Class Q (In development, contact factory) Device Type: (Note 2) (01) = fmax = 133MHz, QML Q only (Temperature Range: -55°C to +105°C) (02) = fmax = 133MHz Aeroflex Q+ Flow (Temperature Range -55°C to +105°C) Drawing Number: (15212) = 2M x 32 SSRAM Total Dose: (R) = 100 krad(Si) Federal Stock Class Designator: No options Notes: 1. Lead finish is per the table below. 2. Aeroflex’s Q+ assembly flow, as defined in section 4.2.2.d of the SMD, provides QML-Q product through the SMD that is manufactured with Aeroflex’s QML-V flow. 36-00-01-007 Ver. 1.10.0 Package Option Associated Lead Finish Option (X) 288-CLGA (C) Gold (F) 288-CCGA (F) Hot Solder Dipped - 24 - Cobham Semiconductor Solutions Aeroflex.com/Memories This product is controlled for export under the U.S. Department of Commerce (DoC). A license may be required prior to the export of this product from the United States. Cobham Semiconductor Solutions 4350 Centennial Blvd Colorado Springs, CO 80907 E: [email protected] T: 800 645 8862 Advanced Datasheets - Product is in Development Preliminary Datasheet - Prototypes are Shipping Datasheet - Shipping QML & Reduced Hi - Rel Aeroflex Colorado Springs Inc., DBA Cobham Semiconductor Solutions, reserves the right to make changes to any products and services described herein at any time without notice. Consult Aeroflex or an authorized sales representative to verify that the information in this data sheet is current before using this product. Aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by Aeroflex; nor does the purchase, lease, or use of a product or service from Aeroflex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of Aeroflex or of third parties. 36-00-01-007 Ver. 1.10.0 - 25 - Cobham Semiconductor Solutions Aeroflex.com/Memories DATA SHEET REVISION HISTORY Revision Date Description of Change 10/2/2014 Release of Preliminary Data Sheet 9/16/13 Release of Preliminary Data Sheet 10/1/13 Page 3: DQ[51:0] added Aeroflex pull-up/down recommendation Page 8: Table 4 revised Page 9: Corrected CSx state for Sleep Mode from X to H 11/4/13 Page 3: Added manual RESET pin to Table 1. Page 10: Pullup/down requirements changed from 75kΩ to 10kΩ R17 bias from VSSQ to VDDQ P16 from VSSQ to NUIH P11 bias from VSS to VDDQ P6 from NUIL to VSSQ R11 from VDDQ to RESET Page 16:Shutdown and Sleep Mode Characterization table revised: tSHTDWNREC corrected from 100ms max to 50us min tCR corrected from 10us to 20us max Page 17: Corrected Figures 4-6 1/10/14 Page 8: Added SSRAM requires VDD < VDDQ. Clarified clock conditioning paragraph. Page 12, 14, 16: Added VDDQ voltage range to top of tables. Page 12: Changed IDDQ specification for all modes. Adjusted current specifications. Page 13: Added Note 3 for 105oC post-irradiation specifications. Page 15: Changed Note 5 to guaranteed by design and added note reference to all X and Z specifications. Page 23, 24: Corrected pin count for CLGA to 288 and corrected package designators to (Z) (S). 4/24/14 Page 1: SEU changed to 1x10-15 Page 6,7: Multiple wording typo corrections Page 11: ΘJC changed to 3oC/W Page 13: CIN and CI/O change to 15pF. Page 14, 15: Standardized signal names in descriptions and added note numbers to some parameters. Reworded note 4. Page 16: Added notes 3 and 4. Page 17: Added SHUTDOWN to signal in Figure 5. Page 22: Added advanced to Figure 11 title. 8/19/14 10/2/2014 36-00-01-007 Ver. 1.10.0 Page 12: Added IDDQ parameters for Stby, Shutdown, andSleepmodes. Finalized all current limits per characterization data. Page 14, 15: Finalized AC Setup, Hold, and Output limits per characterization data. Page 11: Added Operational Environment table. Page 12: Added IIN paramter for EDACEN, TDI, and TMS pins. DC ELECTRICAL CHARACTERISTICS table Page 23 and 24: Updated SMD and Ordering Info sections. - 26 - Cobham Semiconductor Solutions Aeroflex.com/Memories 3/18/2015 Ver. 1.8.0 Page 1: Clock-to-ouput time changed from 6.7ns to 7ns. Added SMD Number. Page 8: Added pinout R7 and R8 to Table 4 Page 10: Changed lead signal R7 and 8R names from VSS to NUIL. Page 11: Changed PD value from 10-15 in Absolute Maximum Ratings table. Page 12: SCRUBEN Device Pin added to Condition column of parameters IIN1 and IIN2 in the DC ELECTRICAL CHARACTERISTICS table Page 14: The minimum setup times for parameters tCENS, tWES, and tCSS have changed from 2.5ns to 3ns, and the maximum output time for tCQV and tCMV1 changed from 6.7ns to 7 ns and tCMV2 changed from 8.5ns to 9 ns in the AC ELECTRICAL CHARACTERISTICS table. Pages 20 and 21: Corrected bottom view orientation of package drawing. Page 24: A correction the Lead Finish section of the SMD ordering encoder page. The Solder lead finish designator was changed from "A" to "F". Added SMD Designator. April 2015 Ver. 1.9.4 Page 8: Added pinout R13 and R16 to Table 4. Page 10: Changed pinout R13 and R16 from VSS to NUIL, and P8 from VSS to VSSQ June 2015 Page 1 & 24: Updated the SMD number. Version 1.10.0 36-00-01-007 Ver. 1.10.0 - 27 - Cobham Semiconductor Solutions Aeroflex.com/Memories