NPN SILICON RF TRANSISTOR NE85600 UE FEATURES D NPN SILICON HIGH FREQUENCY TRANSISTOR • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E • LOW NOISE FIGURE: 1.1 dB at 1 GHz B • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION IN • LOW COST 00 (CHIP) ORDERING INFORMATION (Pb-Free) DESCRIPTION PART NUMBER NE85600 NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 10 V, IC 7 mA 20 MSG 3.5 GA 15 MAG 3.0 10 2.5 5 NFMIN 2.0 1.5 DI Noise Figure, NF (dB) 4.0 1.0 0.4 0.5 1.0 2 Frequency, f (GHz) 3 4 5 Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB) SC O NT NE85600 NPN epitaxial silicon transistor is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE85600 offers excellent performance and reliability at low cost. This is achieved by the titanium/platinum/gold metallization system and their direct nitride passivated base surface process. The NE85600 is available in chip form for high frequency applications. QUANTITY NE85600-A 100 OUTLINE DIMENSIONS GEL Pack (Units in mm) NE85600 (CHIP) 0.35 0.30 0.22 BASE EMITTER .112 0.07φ (Chip Thickness: 140 to 160 μm) (Collector: Back Side Gold) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Date Published: August 20, 2010 PACKAGING 0.35 NE85600 ELECTRICAL CHARACTERISTICS (TA = 25°C) |S21E|1 hFE ICBO IEBO Associated Gain at VCE = 10 V, IC = 7 mA,f = 2 GHz Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 2 GHz Forward Current Gain1 at VCE = 10 V, IC = 20 mA Collector Cutoff Current at VCB = 10 V, IE = 0 mA Emitter Cutoff Current at VEB = 1 V, IC = 0 mA dB dB μA μA Cre Feedback Capacitance2 at VCB = 3 V, IE = 0 mA, f = 1 MHz VCB = 10 V, IE = 0 mA, f = 1 MHz PT Total Power Dissipation Thermal Resistance (Junction to Case) RTH (J-C) 10 7 9 50 120 300 1.0 1.0 pF pF 0.5 1.0 mW 700 °C/W 60 NT UE GA IN D PART NUMBER NE85600 PACKAGE OUTLINE 00 (CHIP) SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX fT Gain Bandwidth Product at VCE = 10 V, IC = 20 mA GHz 7.0 NF Noise Figure at dB 1.4 VCE = 10 V, IC = 7 mA,f = 1 GHz VCE = 10 V, IC = 7 mA,f = 2 GHz dB 2.1 Notes: 1. Pulse width ≤ 350 μs, duty cycle ≤ 2% pulsed. 2. Cre measurement employs a three terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal. SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 12 VEBO Emitter to Base Voltage V 3.0 IC Collector Current mA 100 TJ Junction Temperature °C 200 TSTG Storage Temperature °C -65 to +150 DI Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. NE85600 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPTGA ΓOPT (dB) VCE = 10 V, IC = 7 mA (dB) MAG ANG Rn/50 500 1.2 21.86 0.20 138 0.13 2000 2.2 11.87 0.49 176 0.23 1000 4000 1.4 4.2 15.82 5.75 0.22 0.63 158 -141 0.19 0.47 TYPICAL PERFORMANCE CURVES (TA = 25°C) FORWARD CURRENT GAIN vs. COLLECTOR CURRENT 500 DC Forward Current Gain, hFE SC O ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) VCE = 10 V 300 200 100 70 50 30 20 10 1 2 3 5 7 10 20 Collector Current, IC (mA) 30 50 NE85600 TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j50 j100 j25 j100 j25 j10 j10 50 100 25 0 S11 -j100 -j25 NE85600 VCE = 10 V, IC = 7 mA Coordinates in Ohms -j10 Frequency in GHz VCE = 10 V, IC = 20 mA -j50 100 S22 S11 -j100 -j25 UE S22 -j10 50 D 25 0 -j50 FREQUENCY S11 S21 S12 S22 MAGANG 100 200 500 1000 1500 2000 2500 3000 4000 5000 6000 7000 8000 0.881 0.833 0.803 0.792 0.789 0.788 0.785 0.784 0.783 0.782 0.786 0.788 0.787 -40.9 -75.0 -129.8 -158.7 -170.5 -178.0 176.3 171.8 164.5 158.2 152.7 147.5 142.5 VCE = 10 V, IC = 10 mA 100 200 500 1000 1500 2000 2500 3000 4000 5000 6000 7000 8000 0.834 0.800 0.786 0.782 0.781 0.781 0.778 0.777 0.777 0.779 0.780 0.780 0.781 -48.9 -87.0 -138.7 -163.4 -173.7 179.6 174.6 170.3 163.5 157.4 152.2 147.1 142.4 15.380 13.961 8.644 4.745 3.260 2.478 2.009 1.681 1.277 1.027 0.852 0.714 0.605 155.0 138.0 108.8 89.5 78.7 70.1 62.3 55.0 42.2 30.4 20.3 11.2 3.9 20.265 17.509 9.871 5.268 3.609 2.723 2.208 1.849 1.407 1.135 0.947 0.802 0.687 151.6 133.0 105.4 88.0 78.1 70.3 63.0 56.1 43.7 32.0 22.2 13.1 5.6 31.641 23.756 11.553 5.982 4.055 3.062 2.476 2.073 1.581 1.279 1.075 0.919 0.797 142.9 122.7 99.6 85.6 76.9 70.0 63.3 57.0 45.5 34.5 24.7 15.8 7.8 SC O MAGANG VCE = 10 V, IC = 20 mA -71.1 -112.3 -152.7 -170.7 -178.6 176.0 171.8 167.9 161.7 156.1 150.8 146.2 141.5 DI 100 0.753 200 0.756 500 0.771 1000 0.772 1500 0.774 2000 0.773 2500 0.772 3000 0.772 4000 0.771 5000 0.771 6000 0.776 7000 0.776 8000 0.775 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 MAGANG 0.026 0.041 0.056 0.060 0.063 0.065 0.069 0.073 0.084 0.099 0.118 0.138 0.158 0.910 0.760 0.487 0.360 0.330 0.327 0.332 0.351 0.392 0.445 0.501 0.555 0.606 -18.9 -31.5 -43.9 -46.5 -50.5 -56.4 -63.4 -69.6 -84.4 -97.1 -108.5 -118.2 -127.1 0.08 0.13 0.26 0.49 0.70 0.90 1.05 1.17 1.27 1.26 1.13 1.03 0.96 27.7 25.3 21.9 19.0 17.1 15.8 13.3 11.1 8.7 7.1 6.4 6.1 5.8 61.3 46.4 31.2 26.9 31.8 36.2 40.3 45.2 49.9 53.2 55.4 54.8 54.2 0.872 0.691 0.410 0.291 0.263 0.261 0.271 0.287 0.330 0.385 0.444 0.500 0.552 -23.6 -38.0 -50.7 -53.1 -57.0 -62.1 -68.8 -75.3 -88.9 -100.4 -110.2 -119.2 -127.5 0.13 0.15 0.31 0.60 0.81 0.98 1.10 1.21 1.28 1.23 1.13 1.04 0.98 29.3 26.9 23.2 20.1 18.1 16.5 13.3 11.3 9.0 7.5 6.7 6.3 6.3 59.3 42.9 31.7 38.0 43.8 47.5 55.1 53.8 56.7 57.3 57.1 55.3 53.7 0.777 0.551 0.289 0.195 0.174 0.177 0.187 0.208 0.250 0.306 0.361 0.419 0.474 -33.9 -50.5 -62.9 -65.7 -69.6 -75.7 -82.3 -87.1 -98.6 -107.4 -115.4 -122.2 -128.8 0.11 0.20 0.45 0.76 0.96 1.11 1.18 1.20 1.23 1.18 1.11 1.02 0.97 31.8 29.3 25.3 21.6 19.3 15.4 13.3 11.8 9.5 8.0 7.1 6.9 6.7 67.0 50.7 30.3 25.7 26.9 29.4 32.6 38.8 43.9 50.4 53.6 54.7 54.6 0.024 0.036 0.047 0.051 0.056 0.061 0.067 0.072 0.086 0.103 0.123 0.143 0.161 0.021 0.028 0.034 0.041 0.048 0.055 0.064 0.074 0.092 0.112 0.131 0.152 0.169 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain MAG1 MAGANG IN (MHz) NT K (dB) 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE85600 NONLINEAR MODEL SCHEMATIC Q1 CCB CCE LE Q1 Parameters Q1 IS 6e-16 MJC 0.55 BF 120 XCJC 0.3 NF 0.978 CJS 0 VAF 10 VJS 0.75 IKF 0.08 MJS ISE 32e-16 FC NE 1.93 TF BR 12 XTF NR 0.991 VTF VAR 3.9 ITF 0.17 PTF ISC 0 TR NC 2 EG 1.11 RE 0.38 XTB 0 RB 4.16 XTI 3 RBM 3.6 KF 1.56e-18 IRB 1.96e-4 AF 1.49 RC 2 CJE 2.8e-12 VJE 1.3 MJE 0.5 CJC 1.1e-12 VJC 0.7 0 0.5 10e-12 6 10 0.2 0 1e-9 SC O IKR DI (1) Gummel-Poon Model Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current NT Parameters UNITS IN Emitter BJT NONLINEAR MODEL PARAMETERS (1) Collector UE Base D LC LB amps ADDITIONAL PARAMETERS Parameters 68019 CCB 0.087e-12 CCE 0.16e-12 LB 0.295e-9 LE 0.103e-9 LC 0.01e-9 MODEL RANGE Frequency: 0.1 to 7.0 GHz Bias: VCE = 1 V to 10 V, IC = 0.25 mA to 40 mA Date: 7/97