NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz (3 GHz for the NE73435) • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 30 (SOT 323 STYLE) DESCRIPTION NE73433 is in the plastic Mini-Mold package designed for high-speed automated assembly operations for large volume hybrid ICs. For hybrid MIC applications requiring more performance, the NE73435 is recommended. This device is packaged in the economical metal-ceramic, hermetic Micro-X package. The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NEC's highly reliable platinum-silicide, titanium, platinum, and gold metallization system to assure uniform performance and reliability. The ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 5 mA NFMIN MAG |S21E|2 hFE Minimum Noise Figure2 at VCE = 10 V, IC = 3 mA, f = 0.5 GHz VCE = 10 V, IC = 5 mA, f = 0.9 GHz Maximum Available Gain3 at VCE = 10 V, IC = 10 mA, f = 0.5 GHz f = 1 GHz Insertion Power Gain at VCE = 10 V, IC = 10 mA, f = 0.5 GHz f = 1 GHz NE73430 2SC4185 30 UNITS MIN TYP GHz GHz 2.3 dB dB 4.0 MAX MIN TYP 1.5 3.0 2.1 dB dB 17 dB dB Forward Current Gain Ratio at VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 5 mA NE73435 2SC2148 35 100 3.5 18 13 8 40 MAX 8 16 9 25 100 200 180 ICBO Collector Cutoff Current at VCB = 15 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 2 V, IC = 0 µA CCB Collector to Base Capacitance4 at VCB = 10 V, IC = 0 mA, f = 1 MHz pF Total Power Dissipation mW 150 250 Thermal Resistance (Junction to Case) °C/W 833 550 PT RTH 0.1 0.1 0.1 1.5 0.75 .55 1.5 Notes: 1. Electronic Industrial Association of Japan. 2. Input and output are tuned for optimum noise figures. 3. Maximum Available Gain (MAG) is calculated MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| 4. CCB measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal. California Eastern Laboratories NE734 SERIES ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 30 VCEO Collector to Emitter Voltage V 14 VEBO Emitter to Base Voltage V 3 NE73435 TYPICAL NOISE PARAMETERS (TA = 25°C) ΓOPT FREQ. NFOPT GA (MHz) (dB) (dB) MAG ANG Rn/50 VCE = 10 V, IC = 3 mA IC Collector Current mA 50 500 2.0 16.1 0.30 80 0.63 TJ Junction Temperature °C 2002 3.1 11.2 0.43 126 0.33 Storage Temperature °C 1000 TSTG -65 to +2003 1500 4.2 9.2 0.54 168 0.19 2000 5.1 7.1 0.56 178 0.20 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Maximum Junction Temperature for the NE73430 is 150°C. 3. Maximum Storage Temperature for the NE73430 and the NE73435 Grade D is 150°C. VCE = 10 V, IC = 15 mA 500 3.3 17.5 0.34 120 0.36 1000 4.7 13.5 0.47 168 0.27 1500 6.5 10.8 0.67 -174 0.13 2000 7.4 9.2 0.64 -163 0.46 TYPICAL PERFORMANCE CURVES (TA = 25°C) DC CURRENT GAIN vs. COLLECTOR CURRENT SATURATION VOLTAGE vs. COLLECTOR CURRENT 500 VBE(SAT) DC Forward Current Gain, hFE Collector to Emitter and Base to Emitter Saturation Voltage VCE (SAT), VBE (SAT) (V) 2 1 0.7 IC = 10XIB 0.5 0.3 0.2 0.1 0.07 VCE(SAT) 0.05 200 VCE = 10 V 100 70 VCE = 1 V 50 30 20 0.03 10 0.02 0.1 0.2 0.5 1 2 5 10 20 50 Collector Current, IC (mA) 10 7 5 3 VCE = 10 V NE73435 2 1 0.7 0.5 0.3 0.2 0.1 0.5 0.7 1 2 3 5 7 10 20 Collector Current, IC (mA) 0.5 0.7 1 2 3 5 7 10 20 Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) 300 30 50 30 50 NE734 SERIES TYPICAL PERFORMANCE CURVES (TA = 25°C) NE73435 NOISE FIGURE vs. COLLECTOR CURRENT NE73435 GAIN vs. FREQUENCY 32 6 VCE = 10 V IC = 30 mA VCE = 10 V f = 500 MHz 5 Noise Figure, NF (dB) 24 Gain, (dB) MAG |S21E| 2 16 8 4 3 2 NE73435 TUNED 0 1 0.1 0.2 0.3 0.5 0.7 1 2 3 5 0.5 0.7 1 2 3 5 7 10 20 30 50 Collector Current, IC (mA) Frequency, f (GHz) ORDERING INFORMATION PART NUMBER QUANTITY NE73430-T1 NE73435 Note: 1. Embossed tape 12 mm wide. 3000 1 PACKAGING Tape & Reel ESD Bag NE734 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS 90˚ 1 0.8 1.5 0.6 2 135˚ 0.4 45˚ S21 3 4 5 0.2 0.2 0.4 0.6 0.8 1 1.5 2 3 4 5 10 20 50 10 20 -50 S12 180˚ 0.05 -20 -5 -4 S11 10.00 -3 -0.4 -0.6 -1.5 -0.8 15.00 315˚ Coordinates in Ohms 225˚ Frequency in GHz (VCE = 10 V, IC = 20 mA) -2 -1 0˚ 5.00 -10 S22 -0.2 0.10 0.15 20.00 270˚ NE73435 VCE = 10 V, IC = 3 mA FREQUENCY S11 S21 S12 S22 MAG K ANG MAG1 (MHz) MAG ANG MAG ANG MAG ANG (dB) 100 200 500 1000 1500 2000 2500 3000 4000 0.861 0.810 0.676 0.616 0.607 0.610 0.613 0.618 0.630 -28.4 -55.0 -115.5 -156.0 -175.1 171.3 160.0 149.5 128.9 6.880 6.206 4.323 2.494 1.709 1.317 1.071 0.896 0.647 157.0 139.8 104.1 74.4 55.6 39.0 25.3 13.0 -8.4 0.026 0.047 0.070 0.085 0.095 0.107 0.118 0.132 0.170 70.5 56.9 37.3 30.5 32.2 32.2 33.9 33.5 33.7 0.960 -11.1 0.865 -19.2 0.689 -29.0 0.612 -38.3 0.612 -49.8 0.616 -62.2 0.632 -74.0 0.649 -87.3 0.657 -112.9 0.19 0.28 0.50 0.84 1.05 1.16 1.20 1.19 1.20 24.2 21.2 17.9 14.7 11.2 8.5 6.9 5.7 3.1 -39.0 -74.2 -134.4 -166.4 178.1 166.2 155.9 146.0 126.0 10.428 8.974 5.214 2.797 1.893 1.442 1.161 0.967 0.690 151.6 131.4 96.8 70.8 53.1 37.6 24.2 12.0 -9.3 0.025 0.040 0.056 0.073 0.088 0.102 0.117 0.133 0.176 66.2 52.9 37.4 37.1 39.9 39.9 41.0 40.6 39.2 0.923 -14.4 0.788 -22.4 0.613 -28.4 0.563 -36.6 0.572 -47.9 0.582 -60.5 0.604 -72.5 0.628 -85.9 0.639 -111.8 0.22 0.31 0.62 0.94 1.09 1.16 1.15 1.10 1.09 26.2 23.5 19.7 15.8 11.5 9.1 7.6 6.7 4.1 -62.0 -106.6 -153.4 -175.8 171.8 161.4 151.8 142.4 122.6 16.892 12.598 5.959 3.063 2.039 1.532 1.220 1.009 0.712 142.1 118.5 89.6 67.1 50.5 35.2 22.4 10.4 -10.1 0.020 0.031 0.042 0.061 0.080 0.096 0.112 0.132 0.182 59.4 48.8 42.9 47.2 48.7 48.3 48.3 47.9 44.2 0.846 -19.1 0.677 -24.6 0.541 -25.9 0.521 -33.7 0.541 -45.3 0.559 -58.0 0.586 -70.7 0.612 -84.2 0.627 -111.0 0.26 0.40 0.81 1.07 1.12 1.14 1.10 1.02 0.96 29.3 26.1 21.5 15.4 12.0 9.8 8.4 8.0 5.9 -94.8 -134.2 -165.6 178.2 167.5 157.8 148.5 139.0 119.3 22.708 14.233 6.118 3.061 2.014 1.506 1.190 0.976 0.682 130.8 108.5 84.3 63.8 47.5 32.9 20.3 8.7 -11.2 0.015 0.023 0.034 0.054 0.072 0.089 0.108 0.132 0.190 57.7 48.1 51.7 53.6 55.5 55.1 56.1 55.3 49.2 0.761 -21.6 0.599 -23.0 0.515 -22.0 0.517 -30.8 0.545 -43.4 0.564 -56.8 0.594 -69.8 0.621 -83.9 0.634 -111.2 0.32 0.55 0.95 1.13 1.14 1.12 1.02 0.91 0.86 31.8 27.9 22.6 15.3 12.2 10.2 9.6 8.7 5.6 VCE = 10 V, IC = 5 mA 100 200 500 1000 1500 2000 2500 3000 4000 0.798 0.733 0.628 0.603 0.605 0.613 0.621 0.628 0.644 VCE = 10 V, IC = 10 mA 100 200 500 1000 1500 2000 2500 3000 4000 0.687 0.635 0.603 0.607 0.621 0.633 0.646 0.652 0.672 VCE = 10 V, IC = 20 mA 100 200 500 1000 1500 2000 2500 3000 4000 0.584 0.594 0.613 0.632 0.650 0.666 0.678 0.686 0.699 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE734 SERIES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 30 RECOMMENDED P.C.B. LAYOUT OUTLINE 30 (SOT-323) 2.1 ± 0.2 1.25 ± 0.1 1.7 2 2.0 ± 0.2 0.65 2 +0.1 0.3 -0.05 (ALL LEADS) 1.3 3 3 1 MARKING 1.3 1. Emitter 2. Base 3. Collector 0.15 0.9 ± 0.1 0.65 0.6 1 0.8 +0.10 0.15 -0.05 0 to 0.1 PACKAGE OUTLINE 35 (MICRO-X) E 3.8 MIN ALL LEADS 0.5±0.06 B C 45˚ 1. Collector 2. Emitter 3. Base 4. Emitter E 2.55±0.2 +0.06 0.1 -0.04 φ2.1 1.8 MAX 0.55 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES ¥ Headquarters ¥ 4590 Patrick Henry Drive ¥ Santa Clara, CA 95054-1817 ¥ (408) 988-3500 ¥ Telex 34-6393 ¥ FAX (408) 988-02 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) ¥ Internet: http://WWW.CEL.COM 06/21/2001 DATA SUBJECT TO CHANGE WITHOUT NOTICE