ETC NE696M01

NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
NE696M01
OUTLINE DIMENSIONS (Units in mm)
•
HIGH fT:
14 GHz TYP at 3 V, 10 mA
PACKAGE OUTLINE M01
•
LOW NOISE FIGURE:
NF = 1.6 dB TYP at 2 GHz
TOP VIEW
HIGH GAIN:
|S21E|2 = 14 dB TYP at 2 GHz
•
6 PIN SMALL MINI MOLD PACKAGE
•
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
1.25 ± 0.1
0.65
1
2.0 ± 0.2
1.3
2
6
T95
•
2.1 ± 0.1
0.2 (All Leads)
5
3
4
SIDE VIEW
DESCRIPTION
0.9 ± 0.1
NEC's NE696M01 is an NPN high frequency silicon epitaxial
transistor (NE685) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE696M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
0.7
+0.10
0.15 - 0.05
0 ~ 0.1
PIN OUT
1. Emitter
2. Emitter
3. Base
4. Emitter
5. Emitter
6. Collector
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE696M01
M01
UNITS
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
hFE1
Forward Current Gain at VCE = 3 V, IC = 10 mA
fT
Cre2
|S21E|2
NF
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
MIN
TYP
MAX
0.1
0.1
80
120
GHz
14
pF
0.15
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
dB
14
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
dB
1.6
160
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
California Eastern Laboratories
NE696M01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
9
VCEO
Collector to Emitter Voltage
V
6
VEBO
Emitter to Base Voltage
V
2
IC
Collector Current
mA
30
PT
Total Power Dissipation
mW
150
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKAGING
3000
Tape & Reel
NE696M01-T1
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
NE696M01
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ.
(GHz)
NFOPT
(dB)
VCE = 1 V, IC = 3 mA
1.0
1.4
1.4
1.46
1.7
1.55
2.0
1.8
3.0
2.3
VCE = 2 V, IC = 1 mA
0.5
.94
0.8
1.1
1.0
1.25
1.5
1.55
2.0
1.94
3.0
2.65
VCE = 2 V, IC = 5 mA
0.5
1.2
0.8
1.32
1.0
1.47
1.5
1.63
2.0
1.82
3.0
2.17
VCE = 3 V, IC = 5 mA
0.5
0.8
1.0
1.5
2.0
3.0
1.25
1.35
1.41
1.58
1.81
2.29
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
ANG
Rn/50
18.5
16.4
15.2
14.5
11.0
0.53
0.47
0.43
0.39
0.3
79
95
111
132
177
0.27
0.13
0.19
0.16
0.10
16.8
14.8
13.8
11.4
9.6
7.0
0.72
0.66
0.63
0.56
0.5
0.46
41
65
79
104
138
-173
0.52
0.44
0.39
0.31
0.17
0.07
23.0
20.3
18.8
15.8
13.0
9.8
0.49
0.44
0.42
0.39
0.33
0.25
37
62
76
98
126
173
0.38
0.27
0.30
0.23
0.18
0.10
24.2
20.7
18.8
15.2
13.7
12.0
0.5
0.45
0.44
0.41
0.34
0.29
37
62
78
97
126
164
0.39
0.26
0.29
0.24
0.20
0.09
ΓOPT
VCE = 2 V
Collector Current, IC (mA)
Total Power Dissipation, PT (mW)
MAG
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
200
GA
(dB)
100
40
30
20
10
0
0
50
100
0
150
0.5
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
500
200 µA
180 µA
160 µA
140 µA
120 µA
100 µA
80 µA
15
10
60 µA
5
40 µA
DC Current Gain, hFE
Collector Current, IC (mA)
25
20
1.0
Base to Emitter Voltage, VBE (V)
Ambient Temperature, TA (˚C)
200
VCE = 2 V
100
50
VCE = 1 V
20
IB = 20 µA
10
0
1.0
2.0
3.0
Collector to Emitter Voltage, VCE (V)
1
2
5
10
20
50
Collector Current, IC (mA)
100
NE696M01
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
150.0
DC Current Gain, hFE (mA)
Collector Current, IC (mA)
30.0m
IC
2.00m
/div
HFE
10.0
/div
50.0
0.00
0.00
VCE (V)
500m /div
0.00
6.00
IC (A)
2.00m /div
30.0m
Collector Current, IC (mA)
Collector to Emitter Voltage, VCE (V)
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE696M01
VCE = 1 V, IC = 5 mA
FREQUENCY
S11
(GHz)
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.40
1.60
1.80
2.00
2.25
2.50
2.75
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
MAG
0.728
0.684
0.639
0.594
0.556
0.522
0.492
0.442
0.406
0.380
0.362
0.353
0.351
0.360
0.377
0.397
0.451
0.498
0.538
0.567
0.587
0.608
0.630
0.657
0.690
S21
ANG
-52.30
-64.20
-73.80
-83.40
-92.50
-100.70
-108.50
-123.40
-137.30
-150.60
-164.30
-176.70
167.30
152.60
138.80
127.30
107.70
93.20
82.30
74.10
67.30
61.10
55.20
49.10
42.90
MAG
10.962
10.349
9.557
8.885
8.236
7.644
7.116
6.242
5.522
4.931
4.452
4.047
3.606
3.248
2.942
2.676
2.251
1.930
1.690
1.509
1.361
1.229
1.091
0.949
0.818
S12
ANG
136.50
128.40
121.20
114.50
108.30
102.80
97.80
88.70
80.40
73.00
65.90
59.30
51.40
43.80
36.40
29.70
16.40
4.10
-7.90
-19.70
-31.50
-43.20
-54.40
-63.80
-70.40
MAG
0.040
0.046
0.052
0.056
0.059
0.062
0.063
0.067
0.069
0.070
0.072
0.074
0.075
0.077
0.079
0.081
0.085
0.092
0.101
0.113
0.127
0.141
0.155
0.164
0.171
S22
ANG
56.00
51.30
46.70
42.10
38.80
35.70
33.80
29.60
26.80
24.40
22.70
21.90
20.20
20.20
19.30
18.50
18.50
17.50
16.20
13.60
9.40
4.00
-1.40
-6.40
-9.20
MAG
0.832
0.779
0.732
0.687
0.647
0.615
0.587
0.542
0.509
0.485
0.469
0.459
0.451
0.449
0.453
0.458
0.477
0.496
0.513
0.532
0.555
0.593
0.637
0.678
0.719
ANG
-32.90
-39.10
-44.00
-48.50
-52.30
-55.70
-58.60
-64.10
-69.10
-73.40
-77.90
-81.80
-86.70
-91.40
-96.10
-100.50
-108.90
-118.00
-128.80
-142.40
-158.60
-175.70
168.60
157.90
154.80
K
MAG1
0.303
0.338
0.398
0.463
0.522
0.579
0.640
0.748
0.860
0.976
1.069
1.151
1.270
1.353
1.417
1.475
1.530
1.515
1.460
1.371
1.283
1.175
1.077
1.009
0.911
(dB)
24.378
23.521
22.643
22.005
21.449
20.909
20.529
19.692
19.032
18.478
16.304
15.018
13.695
12.702
11.872
11.110
9.936
8.980
8.216
7.622
7.107
6.870
6.778
7.057
6.798
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE696M01
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
0.8
90˚
1
1.5
0.6
2
135˚
0.4
S21
45˚
3
4
5
0.2
0.2
0.4
0.6
0.8 1
1.5
2
3
4 5
10 20
10
20
50
-50
S12
180˚
0.05
-20
0.10 0.15
0˚
-10
5.00
Coordinates in Ohms
Frequency in GHz
VCE = 2 V, IC = 10 mA
-5
-4
S22
-0.2
S11
-3
-0.4
-2
-0.6
225˚
15.00
315˚
-1.5
-0.8
NE696M01
VCE = 2 V, IC = 1 mA
FREQUENCY
GHz
0.40
0.80
1.00
2.00
2.50
3.00
4.00
5.00
6.00
10.00
-1
270˚
S11
MAG
0.941
0.874
0.833
0.610
0.536
0.502
0.550
0.617
0.660
S21
S12
S22
K
MAG1
ANG
-25.2
-49.7
-61.1
-119.1
-150.6
176.8
123.5
93.4
74.9
MAG
2.924
2.776
2.642
2.104
1.808
1.551
1.121
0.852
0.665
ANG
154.2
132.3
122.1
75.2
54.7
36.1
4.0
-22.3
-45.6
MAG
0.037
0.066
0.077
0.097
0.090
0.077
0.053
0.071
0.116
ANG
67.9
51.3
43.1
9.5
-2.7
-10.4
-0.2
25.0
21.5
MAG
0.977
0.930
0.904
0.798
0.765
0.755
0.769
0.789
0.821
ANG
-16.3
-31.3
-37.9
-66.0
-77.3
-87.4
-107.1
-133.7
-169.3
0.181
0.255
0.315
0.662
0.919
1.238
2.016
1.607
1.048
(dB)
18.978
16.239
15.354
13.363
13.030
10.100
7.495
6.222
6.238
-46.2
-83.4
-98.3
-165.4
161.7
134.1
97.3
77.4
64.3
11.297
8.809
7.704
4.496
3.634
3.005
2.169
1.697
1.381
139.6
111.9
101.4
61.9
46.0
31.6
5.4
-19.0
-43.2
0.030
0.047
0.051
0.059
0.062
0.066
0.081
0.107
0.141
59.6
43.1
37.7
27.5
27.6
27.8
29.4
25.2
14.8
0.871
0.715
0.660
0.541
0.530
0.538
0.575
0.610
0.666
-27.0
-43.8
-49.4
-70.7
-80.0
-89.2
-107.7
-132.7
-167.0
0.296
0.509
0.628
1.163
1.357
1.460
1.386
1.152
0.921
25.758
22.728
21.791
16.374
14.112
12.563
10.575
9.638
9.910
VCE = 2 V, IC = 5 mA
0.40
0.80
1.00
2.00
2.50
3.00
4.00
5.00
6.00
0.753
0.583
0.513
0.338
0.333
0.366
0.468
0.543
0.591
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE696M01
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE696M01
VCE = 3 V, IC = 5 mA
FREQUENCY
S11
(GHz)
0.40
0.80
1.00
2.00
2.50
3.00
4.00
5.00
6.00
MAG
0.765
0.596
0.525
0.335
0.323
0.353
0.456
0.533
0.583
S21
ANG
-43.9
-79.7
-94.2
-160.2
166.2
137.5
99.2
78.9
65.7
MAG
11.370
8.988
7.898
4.669
3.781
3.134
2.266
1.773
1.442
S12
ANG
140.8
113.4
102.7
63.0
47.0
32.4
5.9
-18.6
-43.1
MAG
0.028
0.043
0.046
0.054
0.057
0.062
0.078
0.106
0.142
S22
ANG
60.3
44.4
39.6
30.6
30.6
31.8
34.1
29.7
18.5
MAG
0.885
0.739
0.687
0.573
0.562
0.570
0.606
0.642
0.695
ANG
-25.1
-41.1
-46.5
-67.5
-76.6
-85.9
-104.5
-129.8
-164.2
K
MAG1
0.299
0.506
0.627
1.159
1.352
1.422
1.312
1.053
0.823
(dB)
26.086
23.202
22.348
16.952
14.673
13.178
11.285
10.827
10.067
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE696M01
NE696M01 NONLINEAR MODEL
SCHEMATIC
LCX
0.05pF
COLLECTOR
LBX
LB
0.15nH
1.3nH
CCB
BASE
Q1
0.58nH
CCE
0.15pF
CCE_PKG
0.5pF
CBE_PKG
0.13pF
LE
0.22nH
LEX
0.15nH
EMITTER
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
UNITS
Q1
Parameter
Units
IS
7e-16
MJC
0.34
time
seconds
BF
119
XCJC
0.6
capacitance
farads
NF
1.06
CJS
0
inductance
henries
resistance
ohms
VAF
20.5
VJS
0.75
IKF
0.18
MJS
0
voltage
volts
ISE
1e-13
FC
0.5
current
amps
4e-12
NE
2
TF
BR
6.5
XTF
5.2
NR
1.08
VTF
4.58
VAR
18
ITF
0.01
CCB
0.05e-12
IKR
0.015
PTF
0
CCE
0.15e-12
ISC
0
TR
1e-9
LB
1.3e-9
NC
2
EG
1.11
LE
0.22e-9
RE
1.23
XTB
0
CCEPKG
0.5e-12
RB
11
XTI
3
CBEPKG
0.13e-12
RBM
2.5
KF
0
LBX
0.15e-9
IRB
0.009
AF
1
LCX
0.58e-9
RC
5
LEX
0.15e-9
CJE
0.4e-12
VJE
0.68
MJE
0.5
CJC
0.18e-12
VJC
0.5
ADDITIONAL PARAMETERS
Parameters
696M01
MODEL RANGE
Frequency: 0.4 to 7.5 GHz
Bias:
VCE = 0.5 V to 5 V, IC = 0.5 mA to 10 mA
Date:
2/6/97
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
08/21/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.