PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M03 OUTLINE DIMENSIONS (Units in mm) FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz • LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) 0.45 TK • 1.2±0.05 0.3±0.1 3 1 0.2±0.1 DESCRIPTION The NE685M03 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles. 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE685M03 2SC5435 M03 UNITS MIN TYP fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz GHz 12 NF Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz dB 1.5 Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz dB |S21E|2 hFE2 Forward Current Gain at VCE = 3 V, IC = 10 mA ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA CRE3 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 7 MAX 2.5 9 75 140 0.1 0.1 0.4 0.7 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE685M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 5 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 30 PT Total Power Dissipation mW 125 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE D.C. FORWARD CURRENT GAIN vs. COLLECTOR CURRENT 30 150 DC Forward Current Gain, hFE Collector Current, IC (mA) 26 22 18 14 10 6 140 130 120 110 2 0 100 1.0 2.0 3.0 4.0 5.0 Collector to Emitter Voltage, VCE (V) 6.0 0 6 12 18 24 Collector Current, IC (mA) 30 NE685M03 SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 UNITS Parameter Units time seconds IS 8.98e-17 MJC 0.19 capacitance farads BF 107.1 XCJC 0 inductance henries resistance ohms NF 0.99 CJS 0 VAF 22 VJS 0.75 voltage volts IKF 0.55 MJS 0 current amps ISE 1e-6 FC 0.5 NE 31.10 TF 4e-12 BR 16.06 XTF 12 NR 0.98 VTF 1 VAR 6 ITF 0.04 IKR 8.02e-3 PTF 120 ISC 0 TR 1e-9 NC 2 EG 1.11 RE 0.6 XTB 0 RB 10 XTI 3 RBM 8.34 KF 0 IRB 0.009 AF 1 RC 5.07 CJE 0.50e-12 VJE 0.95 MJE 0.5 CJC 0.11e-12 VJC 0.56 ADDITIONAL PARAMETERS Parameters 68533 CCB 0.13e-12 CCE 0.14e-12 LB 0.3e-9 LE 0.8e-9 CCBPKG 0.08e-12 CCEPKG 0.08e-12 LBX 0.12e-9 LCX 0.10e-9 LEX 0.12e-9 MODEL RANGE Frequency: 0.1 to 4.0 GHz Bias: VCE = 0.5 V to 3 V, IC = 0.5 mA to 20 mA Date: 11/98 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 06/10/2002