NEC NE685M03

PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE685M03
OUTLINE DIMENSIONS (Units in mm)
FEATURES
•
PACKAGE OUTLINE M03
NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
fT = 12 GHz
•
LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
0.8±0.1
2
1.4 ±0.1
0.45
(0.9)
0.45
TK
•
1.2±0.05
0.3±0.1
3
1
0.2±0.1
DESCRIPTION
The NE685M03 transistor is designed for low noise, high gain,
and low cost requirements. This high fT part is well suited for
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
0.59±0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE685M03
2SC5435
M03
UNITS
MIN
TYP
fT
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
GHz
12
NF
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
dB
1.5
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
dB
|S21E|2
hFE2
Forward Current Gain at VCE = 3 V, IC = 10 mA
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
CRE3
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
7
MAX
2.5
9
75
140
0.1
0.1
0.4
0.7
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE685M03
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
9
VCEO
Collector to Emitter Voltage
V
5
VEBO
Emitter to Base Voltage
V
2
IC
Collector Current
mA
30
PT
Total Power Dissipation
mW
125
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
D.C. FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
30
150
DC Forward Current Gain, hFE
Collector Current, IC (mA)
26
22
18
14
10
6
140
130
120
110
2
0
100
1.0
2.0
3.0
4.0
5.0
Collector to Emitter Voltage, VCE (V)
6.0
0
6
12
18
24
Collector Current, IC (mA)
30
NE685M03
SCHEMATIC
Q1
CCBPKG
CCB
LCX
LBX
Collector
LB
Base
CCE
CCEPKG
LE
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
Q1
UNITS
Parameter
Units
time
seconds
IS
8.98e-17
MJC
0.19
capacitance
farads
BF
107.1
XCJC
0
inductance
henries
resistance
ohms
NF
0.99
CJS
0
VAF
22
VJS
0.75
voltage
volts
IKF
0.55
MJS
0
current
amps
ISE
1e-6
FC
0.5
NE
31.10
TF
4e-12
BR
16.06
XTF
12
NR
0.98
VTF
1
VAR
6
ITF
0.04
IKR
8.02e-3
PTF
120
ISC
0
TR
1e-9
NC
2
EG
1.11
RE
0.6
XTB
0
RB
10
XTI
3
RBM
8.34
KF
0
IRB
0.009
AF
1
RC
5.07
CJE
0.50e-12
VJE
0.95
MJE
0.5
CJC
0.11e-12
VJC
0.56
ADDITIONAL PARAMETERS
Parameters
68533
CCB
0.13e-12
CCE
0.14e-12
LB
0.3e-9
LE
0.8e-9
CCBPKG
0.08e-12
CCEPKG
0.08e-12
LBX
0.12e-9
LCX
0.10e-9
LEX
0.12e-9
MODEL RANGE
Frequency: 0.1 to 4.0 GHz
Bias:
VCE = 0.5 V to 3 V, IC = 0.5 mA to 20 mA
Date:
11/98
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
06/10/2002