NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 JEITA Part No. NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package <R> ORDERING INFORMATION Part Number Order Number Package NE66219 NE66219-A 3-pin ultra super minimold 2SC5606 2SC5606-A (19, 1608 PKG) (Pb-Free) NE66219-T1 NE66219-T1-A 2SC5606-T1 2SC5606-T1-A Quantity Supplying Form 50 pcs (Non reel) • 8 mm wide embossed taping 3 kpcs/reel • Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 3.3 V Emitter to Base Voltage VEBO 1.5 V IC 35 mA 115 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Note Mounted on 1.08 cm 2 1.0 mm (t) glass epoxy substrate Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10781EJ01V0DS (1st edition) (Previous No. P14658EJ3V0DS00) Date Published August 2009 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NE66219 / 2SC5606 ELECTRICAL CHARACTERISTICS (T A = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA – – 200 nA Emitter Cut-off Current IEBO DC Current Gain VEB = 1 V, IC = 0 mA – – 200 nA Note 1 VCE = 2 V, IC = 5 mA 60 80 100 – fT VCE = 2 V, IC = 20 mA, f = 2 GHz – 21 – GHz VCE = 2 V, IC = 20 mA, f = 2 GHz 10 12.5 – dB VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt – 1.2 1.5 dB hFE RF Characteristics Gain Bandwidth Product S21e Insertion Power Gain Noise Figure 2 NF Reverse Transfer Capacitance Maximum Available Power Gain Maximum Stable Power Gain Note 2 VCB = 2 V, IE = 0 mA, f = 1 MHz – 0.21 0.3 pF MAG Note 3 VCE = 2 V, IC = 20 mA, f = 2 GHz – 14 – dB MSG Note 4 VCE = 2 V, IC = 20 mA, f = 2 GHz – 15 – dB Cre Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K – (K2 – 1) ) S12 4. MSG = S21 S12 hFE CLASSIFICATION <R> 2 Rank FB/YFB Marking UA hFE 60 to 100 Data Sheet PU10781EJ01V0DS NE66219 / 2SC5606 <R> TYPICAL CHARACTERISTICS (Unless otherwise specified, T A = +25C) Remark The graphs indicate nominal characteristics. Data Sheet PU10781EJ01V0DS 3 NE66219 / 2SC5606 Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10781EJ01V0DS NE66219 / 2SC5606 Remark The graph indicates nominal characteristics. <R> S-PARAMETERS Data Sheet PU10781EJ01V0DS 5 NE66219 / 2SC5606 PACKAGE DIMENSIONS 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm) 6 Data Sheet PU10781EJ01V0DS NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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