HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • Satellite radio (SDARS, DMB, etc.) antenna LNA • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3508M04 Order Number NE3508M04-A NE3508M04-T2 NE3508M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V79 type super minimold NE3508M04-T2B • 8 mm wide embossed taping • Pin 1 (Source), Pin 2 (Drain) face 3 kpcs/reel (M04) (Pb-Free) <R> Supplying Form the perforation side of the tape NE3508M04-T2B-A 15 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3508M04-A ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS 3.0 V Drain Current ID IDSS mA Gate Current IG 400 A 175 mW Total Power Dissipation Ptot Note Channel Temperature Tch +150 C Storage Temperature Tstg 65 to +150 C Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB 2 Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10586EJ02V0DS (2nd edition) Date Published October 2008 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NE3508M04 RECOMMENDED OPERATING CONDITIONS (T A = +25C) Parameter Symbol MIN. TYP. MAX. Unit VDS 2 3 V Drain Current ID 10 30 mA Input Power Pin 0 dBm Drain to Source Voltage ELECTRICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V 1 20 A Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 60 90 120 mA VGS (off) VDS = 2 V, ID = 100 A 0.25 0.5 0.75 V Transconductance gm VDS = 2 V, ID = 10 mA 100 mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 2 GHz 0.45 0.7 dB Associated Gain Ga 12 14 dB 18 dBm Gate to Source Cutoff Voltage Gain 1 dB Compression Output Power 2 PO (1 dB) VDS = 3 V, ID = 30 mA (Non-RF), f = 2 GHz Data Sheet PG10586EJ02V0DS NE3508M04 TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Remark The graphs indicate nominal characteristics. Data Sheet PG10586EJ02V0DS 3 NE3508M04 Remark The graphs indicate nominal characteristics. 4 Data Sheet PG10586EJ02V0DS NE3508M04 S-PARAMETERS Data Sheet PG10586EJ02V0DS 5 NE3508M04 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) 6 Data Sheet PG10586EJ02V0DS NE3508M04 MOUNTING PAD DIMENSIONS (REFERENCE ONLY) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) Data Sheet PG10586EJ02V0DS 7 NE3508M04 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260C or below Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). 8 Data Sheet PG10586EJ02V0DS IR260 HS350 NE3508M04 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. Data Sheet PG10586EJ02V0DS 9 NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. 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Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. 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