A Business Partner of Renesas Electronics Corporation. Preliminary NV4V31MF Data Sheet Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0045EJ0200 Rev.2.00 Jun 20, 2013 DESCRIPTION The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW (CW) at up to 85°C. The NV4V31MF can provide excellent linearity from low to high output at high temperatures, and reduces the unevenness of beam divergence. FEATURES <R> • • • • • High optical output power Peak emission wavelength Single transverse mode (lateral) Wide operating temperature range φ 3.8 mm small CAN package Po = 175 mW @CW λp = 405 nm TYP. TC = −5 to +85°C APPLICATIONS • Blue-violet laser light source The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R08DS0045EJ0200 Rev.2.00 Jun 20, 2013 Page 1 of 7 A Business Partner of Renesas Electronics Corporation. NV4V31MF X WITH GLASS φ 1.2 0.8±0.05 90°±2° 0.25±0.07 PACKAGE DIMENSIONS (UNIT: mm) Y EFFECTIVE DIAMETER φ 0.65 MIN. 0.25±0.07 φ 3.8±0.1 0.1±0.05 *1 1.3±0.08 φ 2.42±0.1 LD CHIP Z 0.2 MIN. STEM REFERENCE PLAIN 0.3 MAX. 2.02±0.08 φ 3.1 MAX. 6.5±0.5 1.0±0.1 <R> Chapter Title 3– φ 0.3±0.05 P.C.D. φ 1.43±0.15 1 1 3 LD 3 (Stem GND) 2 0.2±0.1 BOTTOM VIEW 2 PIN CONNECTIONS Remarks 1. Cap glass thickness: 0.25±0.03 mm Cap glass refractive index:1.53 (λ = 405 nm) 2. Position accuracy of the LD chip based on the center of stem Δ x = ±80 μm Δ y = ±80 μm Δ z = ±80 μm (*1) R08DS0045EJ0200 Rev.2.00 Jun 20, 2013 Page 2 of 7 A Business Partner of Renesas Electronics Corporation. NV4V31MF <R> ORDERING INFORMATION Part Number NV4V31MF <R> Chapter Title Order Number NV4V31MF-A Rank GV KV Packing Style Tray Packing (250 p/Tray), Without data Individual Packing (for samples), Without data ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Parameter Optical Output Power (CW) Reverse Voltage of LD Operating Case Temperature Storage Temperature Symbol Po VR TC Tstg Ratings 180 2 −5 to +85 −40 to +85 Unit mW V °C °C RECOMMENDED OPERATING CONDITIONS (TC = 25°C, unless otherwise specified) Parameter Optical Output Power (CW) Symbol Po MAX. 175 Unit mW ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) Parameter Threshold Current Operating Current Optical Voltage Slope Efficiency Peak Wavelength Beam Divergence (lateral) Beam Divergence (vertical) Position Accuracy Angle (lateral) Position Accuracy Angle (vertical) R08DS0045EJ0200 Rev.2.00 Jun 20, 2013 Symbol Ith Iop Vop ηd λp θ// θ⊥ Δθ// Δθ⊥ Conditions CW CW, Po = 175 mW CW, Po = 175 mW CW, Po = 20 mW, 175 mW CW, Po = 175 mW CW, Po = 175 mW CW, Po = 175 mW MIN. MAX. 55 200 6.5 1.1 400 6 15 −3 TYP. 35 150 5.0 1.55 405 9 20 0 −3 0 3 415 12 25 3 Unit mA mA V W/A nm deg. deg. Page 3 of 7 A Business Partner of Renesas Electronics Corporation. NV4V31MF TYPICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) OPTICAL OUTPUT POWER vs. FORWARD CURRENT FORWARD VOLTAGE vs. FORWARD CURRENT 10 160 140 20°C 25°C 30°C 40°C 50°C 60°C 70°C 80°C 90°C 120 100 80 60 40 20 0 0 50 100 150 8 4 2 0 50 100 150 200 Forward Current IF (mA) Forward Current IF (mA) POWER DEPENDENCE OF PEAK WAVELENGTH TEMPERATURE DEPENDENCE OF PEAK WAVELENGTH 412 Peak Wavelength λp (nm) N=5 408 406 404 402 400 60°C 70°C 80°C 90°C 6 0 200 410 0.011 nm/mW 0 50 100 150 408 406 404 402 400 0 200 0.064 nm/°C 20 40 60 80 Optical Output Power PO (mW) Temperature (°C) FFP (LATERAL) FFP (VERTICAL) 175 mW 120 mW 80 mW 40 mW −30 410 175 mW N=5 −20 −10 0 10 20 30 Angle (degrees) 100 175 mW 120 mW 80 mW 40 mW Relative Intensity Peak Wavelength λp (nm) 20°C 25°C 30°C 40°C 50°C 180 Forward Voltage VF (V) Optical Output Power PO (mW) 200 Relative Intensity <R> Chapter Title −30 −20 −10 0 10 20 30 Angle (degrees) Remark The graphs indicate nominal characteristics. R08DS0045EJ0200 Rev.2.00 Jun 20, 2013 Page 4 of 7 A Business Partner of Renesas Electronics Corporation. NV4V31MF Chapter Title Wavelength Spectrum (175 mW) 1.2 1 1 Relative Intensity Relative Intensity Wavelength Spectrum (100 mW) 1.2 0.8 0.6 0.4 0.2 0 400 0.8 0.6 0.4 0.2 402 404 406 408 410 Wavelength λ (nm) 0 400 402 404 406 408 410 Wavelength λ (nm) Remark The graphs indicate nominal characteristics. R08DS0045EJ0200 Rev.2.00 Jun 20, 2013 Page 5 of 7 A Business Partner of Renesas Electronics Corporation. NV4V31MF <R> Chapter Title NOTES ON HANDLING 1. Recommended soldering conditions • Peak Temperature ≤ 350°C • Time ≤ 3 seconds • Soldering of leads should be made at the point 2.0 mm from the root of the lead • This device cannot be mounted using reflow soldering. 2. Usage cautions (1) Take the following steps to ensure that the device is not damaged by static electricity. • Wear an antistatic wrist strap when soldering the device. We recommend a strap with a 1 MΩ resistor. • Make sure that the work table and soldering iron are grounded. • Make sure that the soldering iron does not leak. (2) Do not subject the package to undue stress. The package has a tensile strength of 1N or less. Do not exceed this rating. Also, avoid bending the leads as much as possible. If the leads must be bent, bend them only once, making sure to anchor the stem base of the lead. (3) Do not allow the cap glass of the package to become scratched or dirty. Also, do not subject the cap glass to external force. (4) Be sure to attach a heat sink to sufficiently dissipate heat. (5) Use the device as soon as possible after opening the bag. R08DS0045EJ0200 Rev.2.00 Jun 20, 2013 Page 6 of 7 A Business Partner of Renesas Electronics Corporation. NV4V31MF Chapter Title SAFETY INFORMATION ON THIS PRODUCT <R> DANGER SEMICONDUCTOR LASER VISIBLE LASER RADIATION AVOID EYE OR SKIN EXPOSURE TO DIRECT OR SCATTERED RADIATION OUTPUT POWER 3W MAX WAVELENGTH 400 to 680nm CLASS IV LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. If the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight. (Note that, depending on the wavelength of the beam, the laser beam might not be visible.) • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. R08DS0045EJ0200 Rev.2.00 Jun 20, 2013 Page 7 of 7 Revision History NV4V31MF Data Sheet Rev. Date Page 0.01 1.00 Sep 08, 2011 Mar 05, 2012 2.00 Jun 20, 2013 − Throughout p.3 p.4, 5 p.1 p.2 p.3 p.4 p.6 p.7 Description Summary First edition issued Preliminary Data Sheet -> Data Sheet Modification of ORDERING INFORMATION Addition of TYPICAL CHARACTERISTICS Modification of FEATURES Modification of PACKAGE DIMENSIONS Modification of ORDERING INFORMATION Modification of ABSOLUTE MAXIMUM RATINGS Modification of TYPICAL CHARACTERISTICS Modification of NOTES ON HANDLING Modification of SAFETY INFORMATION ON THIS PRODUCT All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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