PS2653 PS2653L2 PS2654 PS2654L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN OPTOCOUPLER FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN PS2653 and PS2654 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlingtonconnected phototransistor in a plastic DIP (Dual In-Line Package). PS2653 has a base pin and PS2654 has no base pin. Creepage distance and clearance of leads are over 8 millimeters. PS2653L2 and PS2654L2 are surface mount type. • LONG CREEPAGE AND CLEARANCE DISTANCE 8 mm MIN • HIGH COLLECTOR TO EMITTER VOLTAGE VCEO = 40 V MIN • HIGH SPEED SWITCHING tr, tf = 100 µs TYP APPLICATIONS • HIGH CURRENT TRANSFER RATIO CTR: 2000% TYP Interface circuit for various instrumentations and control equipment. • 6 PIN DUAL IN-LINE PACKAGE • AC LINE/DIGITAL LOGIC • TAPING IS AVAILABLE • DIGITAL LOGIC INTERFACE • TWISTED PAIR LINE RECEIVER • TELEPHONE/TELEGRAPH LINE RECEIVER • HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL • RELAY CONTACT MONITOR • POWER SUPPLY MONITOR ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER SYMBOLS UNITS MIN Forward Voltage, IF = 10 mA IR Reverse Current, VR = 5 V C Junction Capacitance, V = 0, f = 1.0 MHz pF Collector to Emitter Dark Current, VCE = 40 V, IF = 0 nA BVCEO Collector to Emitter Breakdown Voltage, IC = 1 mA, IB = 0 V 40 BVECO Emitter to Collector Breakdown Voltage, IE = 100 µA, IB = 0 V 6 Current Transfer Ratio , IF = 1 mA, VCE = 2 V % 200 Collector Saturation Voltage, IF = 1 mA, IC = 2 mA V R1-2 Isolation Resistance, Vin-out = 1.0 k V Ω C1-2 Diode Transistor PARAMETERS VF ICEO CTR VCE(sat) Coupled PS2653, PS2653L2, PS2654, PS2654L2 TYP MAX 1.1 1.4 V µA 1 5 30 400 2000 1.0 1011 Isolation Capacitance, V = 0, f = 1.0 MHz pF 0.6 tr Rise Time2, VCC = 10 V, IC = 10 mA µs 3 tf Fall Time2, VCC = 10 V, IC = 10 mA µs 5 1. CTR rank 2. Test Circuit for Switching Time KD : 2300 to (%) LD : 700 to 3400 (%) MD: 200 to 1000 (%) PULSE INPUT 6 5 4 6 5 VCC 4 ( PW = 100 µs Duty Cycle = 1/10 ) IF 1 5 2 4 PULSE INPUT ( PW = 100 µs Duty Cycle = 1/10 VCC ) IF 1 5 2 4 VOUT 50 Ω 1 2 PS2653 3 1 2 PS2654 6 RL = 100 Ω VOUT 50 Ω RL = 100 Ω 3 PS2653 PS2654 California Eastern Laboratories PS2653, PS2653L2, PS2654, PS2654L2 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS Diode VR IF PD IF (Peak) Transistor VCEO VECO IC PC Coupled BV TSTG TOP PARAMETERS UNITS RATINGS Reverse Voltage Forward Current (DC) Power Dissipation Peak Forward Current PW = 100 µs, Duty Cycle 1% V mA mW A 6 80 150 1 Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation V V mA mW 40 6 200 200 Vr.m.s. °C °C 5000 -55 to +150 -55 to +100 Isolation Voltage2 Storage Temperature Operating Temperature Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input (Pin No. 1, 2, 3 Common) and output (Pin No. 4, 5, 6 Common). OUTLINE DIMENSIONS (Units in mm) PS2653, PS2654 10.16 MAX. 6 5 4 PS2653L2, PS2654L2 6 4 1 1 3 10.16 MAX. 11.8 ± 0.4 2 3 10.16 7.62 6.5 10.16 7.62 6.5 3.8 MAX. 4.25 MAX. 0.35 1.34 0.05 to 0.2 2.8 MAX 4.25 MAX 3.8 MAX 2.54 MAX 2.54 0.50 ± 0.10 1.34 ± 0.10 2.54 1.27 MAX. 0.25 M 0.9 ± 0.25 0 to 15 ˚ 0.25 M PIN CONNECTION (Top View) PS2653, PS2653L2 6 5 6 4 1. 2. 3. 4. 5. 6. 1 2 3 PS2654, PS2654L2 5 4 1. 2. 3. 4. 5. 6. Anode Cathode NC Emitter Collector Base 1 2 3 Anode Cathode NC Emitter Collector NC PS2653, PS2653L2, PS2654, PS2654L2 TYPICAL PERFORMANCE CURVES (TA = 25 °C) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 Transistor Power Dissipation, PC (mW) Diode Power Dissipation, PD (mW) 200 150 100 50 0 25 50 75 150 100 50 100 0 50 75 100 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 140 TA = 100 ˚C 75 ˚C 50 ˚C 120 25 0 -25 -55 10 Collector Current, IC (mA) Forward Current, IF (mA) 25 ˚C ˚C ˚C ˚C 1 0.1 100 5 mA 80 60 2 mA 40 1 mA 20 IF = 0.5 mA Collector to Emitter Dark Current, ICEO (nA) 0.01 0.6 0.8 1.0 1.2 1.4 0 1.6 2 4 6 8 Forward Voltage, VF (V) Collector to Emitter Voltage, VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 50000 1000 40 24 10 5 VCE = 2 1000 10 mA V V V V V Collector Current, IC (mA) 10000 100 10 1 -60 10 -40 -20 0 20 40 60 Ambient Temperature, TA (°C) 80 100 5 mA 100 1 mA 0.5 mA 10 0.2 mA 1 IF = 0.1 mA 0.1 0.4 0.6 0.8 1 1.2 1.4 Collector Saturation Voltage, VCE(sat) (V) 1.6 PS2653, PS2653L2, PS2654, PS2654L2 TYPICAL PERFORMANCE CURVES (TA = 25 °C) CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE 1.2 5000 Current Transfer Ratio, CTR (%) Normalized Output Current, ∆CTR VCE = 2 V 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C IF = 1 mA, VCE = 2 V 0.2 4000 Sample A B 3000 C D 2000 1000 0 0 -55 -25 0 25 50 75 0.05 0.1 100 1 5 10 50 Ambient Temperature, TA (°C) Forward Current, IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 2000 IF = 1 mA VCE = 2 V TA = 25 ˚C VCC = 10 V IC = 2 mA 1000 0 Voltage Gain, AV (dB) Switching Time, t (µs) toff 500 ton tf tr 100 50 -5 -10 -15 RL = 100 Ω -20 10 50 100 500 1k 2k 0.2 0.5 1 2 5 10 20 50 100 200 Frequency, f (kHz) Load Resistance, RL (Ω) CTR DEGRADATION 1.2 CTR Test condition IF = 1 mA 1.0 Normalized, ∆CTR TA = 25 ˚C 0.8 TA = 60 ˚C 0.6 0.4 0.2 0 10 102 103 104 105 106 Time (HR) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -3/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE