HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE SOP PHOTOCOUPLER PS2732-1, -2, -4 PS2733-1, -2, -4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN The PS2732 and PS2733 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. Each is mounted in a plastic SOP (Small Out-line Package) for high density applications. • HIGH COLLECTOR TO EMITTER VOLTAGE VCEO: 300 V MIN: PS2732-1,-2,-4 VCEO: 350 V MIN: PS2733-1,-2,-4 • SOP (SMALL OUT-LINE PACKAGE) APPLICATIONS • ULTRA HIGH CURRENT TRANSFER RATIO CTR: 4000% TYP Interface circuit for various instrumentations and control equipment. • TAPING PRODUCT NUMBER (Only -1 Type) PS2732-1-E3, F3 PS2733-1-E3, F3 • REPLACEMENT FOR RELAY IN PULSE-DIAL CIRCUIT • HIGH CTR CIRCUIT APPLICATIONS ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER Transistor Diode SYMBOLS UNITS VF Forward Voltage, IF = 10 mA V IR Reverse Current, VR = 5 V µA Ct Junction Capacitance, V = 0, f = 1.0 MHz pF ICEO Collector to Emitter Dark Current, VCE = 300 V, IF = 0 nA CTR Current Transfer Ratio, IF = 1 mA, VCE = 2 V % Collector Saturation Voltage, IF = 1 mA, IC = 2 mA V R1-2 Isolation Resistance, VIN-OUT = 1.0 k VDC Ω C1-2 VCE(sat) Coupled PARAMETERS PS2732-1, -2, -4, PS2733-1, -2, -4 MIN TYP MAX 1.15 1.4 5 30 400 1500 4000 1.0 1011 Isolation Capacitance, V = 0, f = 1.0 MHZ pF 0.4 tr Rise Time1, VCC = 5 V, IC = 10 mA, RL = 100 Ω µs 100 tf Fall Time1, VCC = 5 V, IC = 10 mA, RL = 100 Ω µs 100 Note: 1. Test Circuit for Switching Time VCC PULSE INPUT ( PW = 100 µs Duty Cycle = 1/10 ) 1 4 3 8 7 6 5 1 2 1 2 3 4 PS2732-1 PS2733-1 PS2732-2 PS2733-2 16 15 14 13 12 11 10 9 5 IF 2 50 Ω 4 VOUT RL = 100 Ω 1 2 3 4 5 6 7 8 PS2732-4 PS2733-4 California Eastern Laboratories PS2732-1,-2,-4, PS2733-1,-2,-4 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS Diode VR IF UNITS Reverse Voltage Forward Current PD IF (PEAK) Transistor VCEO VEBO IC PC Coupled BV TOP TSTG V mA 6 50 6 50 Power Dissipation mW/Ch Peak Forward Current A (PW = 100 µs, Duty Cycle 1%) 80 1 80 1 Collector to Emitter Voltage V (IC = ImA, IB = 0) Emitter to Base Breakdown Volt V (IE = 100µA, IB = 0) Collector Current mA/Ch Power Dissipation mW/Ch 300/350 300/350 6 6 150 150 150 120 Isolation Voltage2 Operating Temperature Storage Temperature Vr.m.s. °C °C Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and ouput. RATINGS PS2732-1 PS2732-2, -4 PS2733-1 PS2733-2, -4 2500 -55 to +100 -55 to +150 TYPICAL PERFORMANCE CURVES (TA = 25 °C) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 Transistor Power Dissipation, PC (mW) Diode Power Dissipation, PD (mW) 100 75 50 25 25 0 50 75 PS2732-1 PS2733-1 1.5 mW/˚C 100 PS2732-2,-4 PS2733-2,-4 1.2 mW/˚C 50 0 100 25 50 75 100 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 160 100 TA = 100 ˚C 75 ˚C 50 ˚C 140 Collector Current, IC (mA) Forward Current, IF (mA) 150 10 25 ˚C 0 ˚C -25 ˚C -55 ˚C 1 0.1 120 5 mA 4 mA 4.5 mA 3.5 mA 3 mA 2.5 mA 100 2 mA 80 1.5 mA 60 1 mA 40 IF = 0.5 mA 20 0.01 0.6 0.8 1 1.2 1.4 Forward Voltage, VF (V) 1.6 0 1 2 3 4 Collector to Emitter Voltage, VCE (V) 5 PS2732-1,-2,-4, PS2733-1,-2,-4 TYPICAL PERFORMANCE CURVES (TA = 25 °C) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 µ 1000 VCE = 300 V 1µ Collector Current, IC (mA) Collector to Emitter Dark Current, ICEO (A) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 100 n 10 n 1n IF = 2 mA IF = 1 mA IF = 0.5 mA 10 1 100 p -50 0 -25 25 50 75 0.1 100 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Ambient Temperature, TA (°C) Collector Saturation Voltage, VCE(sat) (V) NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT 1.2 5000 VCE = 2 V Current Transfer Ratio, CTR (%) ∆CTR, Normalized Output Current IF = 5 mA 100 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C IF = 1 mA, VCE = 2 V 0.2 0 -50 -25 0 25 50 75 Sample A 4000 Sample B 3000 2000 1000 0 0.1 100 0.5 1 5 10 Ambient Temperature, TA (°C) Forward Current, IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 20 300 tr 0 Voltage Gain, AV (dB) Switching Time,t (µs) 100 VCC = 10 V, IC = 10 mA Pulse Width = 5 ms Duty Cycle = 1/2 50 td tf 10 5 1 20 50 100 500 Load Resistance, RL (Ω) 1k -5 2k 100 Ω -10 1 kΩ -15 -20 -25 ts 10 Ω -30 0.01 VCE = 4 V, IC = 10 mA VIN = 0.1 Vp-p 1 kΩ 1 µF VIN 47 Ω RL VOUT 0.1 1 10 Frequency, f (kHz) 100 PS2732-1,-2,-4, PS2733-1,-2,-4 TYPICAL PERFORMANCE CURVES (TA = 25 °C) CTR DEGRADATION 1.2 IF = 1 mA 1.0 ∆CTR Normalized TA = 25 ˚C 0.8 TA = 60 ˚C 0.6 0.4 0.2 0 10 102 103 104 105 106 Time, Hr OUTLINE DIMENSIONS (Units in mm) PS2732-1, PS2733-1 PIN CONNECTION (Top View) 3 4 4 3 1. 2. 3. 4. PS2732-2, PS2733-2 PIN CONNECTION 5 (Top View) 8 8 7 6 5 Anode Cathode Emitter Collecter 1 2 1 7.0 ± 0.3 4.4 4.5 MAX +0.10 0.15 -0.05 2.3 MAX 0.1 ± 0.1 2.54 1.2 MAX Anode Cathode Emitter Collecter 1 2 3 4 1 2 2.0 1. 3. 2. 4. 5. 7. 6. 8. 4 7.0 ± 0.3 4.4 9.3 MAX 1.3 2.0 +0.10 0.5 ± 0.3 1.3 0.15 -0.05 2.3 MAX 0.1 ± 0.1 2.54 1.2 MAX 0.5 ± 0.3 +0.10 0.4+0.10 -0.05 0.4 -0.05 PS2732-4, PS2733-4 16 PIN CONNECTION (Top View) 9 16 15 14 13 12 11 10 9 1 2 3 4 5 1 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9, 11, 13, 15. Emitter 10, 12, 14, 16. Collector 6 7 8 8 7.0 ± 0.3 4.4 19.46 MAX 2.0 +0.10 1.3 0.15 -0.05 2.3 MAX 0.1 ± 0.1 2.54 1.2 MAX 0.5 ± 0.3 0.4 +0.10 -0.05 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 7/26/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE