NEC PS2604

HIGH ISOLATION VOLTAGE
DARLINGTON TRANSISTOR TYPE
6 PIN OPTOCOUPLER
PS2603
PS2603L
PS2604
PS2604L
FEATURES
DESCRIPTION
• HIGH ISOLATION VOLTAGE
BV: 5 k Vr.m.s. MIN
PS2603, PS2604 ,PS2603L and PS2604L are optically coupled
isolators containing a GaAs light emitting diode and an NPN
silicon Darlington-connected phototransistor. PS2603 and
PS2604 are in a plastic DIP (Dual In-line Package). PS2603L
and PS2604L are lead bending type (Gull-wing) for surface
mount. PS2603 and PS2603L have a base pin, PS2604 and
PS2604L have no base pin.
• HIGH SPEED SWITCHING
tr, tf = 100 µs TYP
• ULTRA HIGH CURRENT TRANSFER RATIO
CTR: 300% TYP
APPLICATIONS
Interface circuit for various instrumentations and control
equipment.
• AC LINE / DIGITAL LOGIC
• DIGITAL LOGIC / DIGITAL LOGIC
• TWISTED PAIR LINE RECEIVER
• TELEPHONE / TELEGRAPH LINE RECEIVER
• HIGH FREQUENCY POWER SUPPLY
FEEDBACK CONTROL
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
Transistor
Diode
SYMBOLS
UNITS
VF
Forward Voltage, IF = 10 mA
V
IR
Reverse Current, VR = 5 V
µA
C
Junction Capacitance, V= 0, f = 1.0 MHz
pF
Collector to Emitter Dark Current, VCE = 40 V, IF = 0
nA
ICEO
MIN
TYP
MAX
1.1
1.4
5
30
400
BVCEO
Collector to Emitter Breakdown Voltage, IC = 1 mA, IB = 0
V
BVECO
Emitter to Collector Breakdown Voltage, IE = 100 µA, IB = 0
V
6
Current Transfer Ratio1, IF = 1 mA, VCE = 2 V
%
200
Collector Saturation Voltage, IF = 1 mA, IC = 2 mA
V
R1-2
Isolation Resistance, VIN-OUT = 1.0 k V
Ω
C1-2
Isolation Capacitance, V = 0, f = 1.0 MHZ
pF
0.6
tr
Rise Time 2, VCC = 10 V, IC = 10 mA
µs
100
tf
Fall Time 2, VCC = 10 V, IC = 10 mA
µs
100
CTR
VCE(sat)
Coupled
PS2603, PS2603L, PS2604, PS2604L
PARAMETERS
Notes:
1. CTR Rank
KD : 2000 to %
LD : 700 to 3400 %
MD : 200 to 1000 %
40
2000
1.0
11
10
2. Test Circuit for Switching Time
PULSE INPUT
6
5
4
6
5
4
(
PW = 1 ms
Duty Cycle = 1/10
1
VCC
5
)
(
IF
2
50 Ω
2
PS2603
3
1
2
PS2604
PW = 1 ms
Duty Cycle = 1/10
1
6
2
4
VOUT
RL = 100 Ω
VCC
5
)
IF
4
1
PULSE INPUT
50 Ω
VOUT
RL = 100 Ω
3
PS2603
PS2604
California Eastern Laboratories
PS2603, PS2603L, PS2604, PS2604L
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
Diode
VR
IF
PD
IF (PEAK)
Transistor
VCEO
VECO
IC
PC
Coupled
BV
TSTG
TOP
PARAMETERS
UNITS
RATINGS
Reverse Voltage
Forward Current (DC)
Power Dissipation
Peak Forward Current
(PW = 100 µs, Duty Cycle 1%)
V
mA
mW
A
6
80
150
1
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation
V
V
mA
mW
40
6
200
200
Vr.m.s.
°C
°C
5000
-55 to +150
-55 to +100
Isolation Voltage2
Storage Temperature
Operating Temperature
Notes
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. AC voltage for 1 minute at TA = 25° C, RH = 60% between input
(Pin No. 1, 2, 3 Common) and output (Pin No. 4, 5, 6 Common).
TYPICAL PERFORMANCE CURVES (TA = 25°)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
Transistor Power Dissipation, PD (mW)
Diode Power Dissipation, PD (mW)
200
150
100
50
0
25
50
75
100
100
50
0
25
50
75
100
Ambient Temperature, TA (°C)
Ambient Temperature , TA (°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
140
TA = 100 ˚C
75 ˚C
50 ˚C
120
Collector Current, IC (mA)
Forward Current, IF (mA)
150
25 ˚C
0 ˚C
-25 ˚C
-55 ˚C
10
1
0.1
100
5 mA
80
60
2 mA
40
1 mA
20
IF = 0.5 mA
0.01
0.6
0.8
1.0
1.2
1.4
Forward Voltage, VF (V)
1.6
0
2
4
6
8
Collector to Emitter Voltage, VCE (V)
10
PS2603, PS2603L, PS2604, PS2604L
TYPICAL PERFORMANCE CURVES (TA = 25°)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
50000
1000
10000
10 mA
40 V
24 V
10 V
5V
VCE = 2 V
1000
Collector Current, IC (nA)
Collector to Emitter Dark Current, ICEO (nA)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
100
10
1
-60
-40
-20
0
20
40
60
80
5 mA
100
1 mA
0.5 mA
10
0.2 mA
1
IF = 0.1 mA
0.1
0.4
100
0.6
0.8
1
1.2
1.4
1.6
Ambient Temperature, TA (°C)
Collector Saturation Voltage, VCE(sat) (V)
NORMALIZED OUTPUT CURRENT
vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO (CTR)
vs. FORWARD CURRENT
1.2
5000
Current Transfer Ratio, CTR, (%)
∆CTR, Normalized Output Current
VCE = 2 V
1.0
0.8
0.6
0.4
Normalized to 1.0
at TA = 25 ˚C
IF = 1 mA, VCE = 2 V
0.2
Sample A
B
3000
C
D
2000
1000
0
0
-55
-25
0
25
50
75
0.05 0.1
100
1
5
10
50
Ambient Temperature,TA (°C)
Forward Current, IF (mA)
SWITCHING TIME vs.
LOAD RESISTANCE
FREQUENCY RESPONSE
2000
IF = 1 mA
VCE = 2 V
TA = 25 ˚C
VCC = 10 V
IC = 2 mA
1000
0
500
Voltage Gain, AV (dB)
ton
Switching Time, t (µs)
4000
toff
tf
tr
100
50
-5
-10
-15
RL = 100 Ω
-20
10
50
100
500
1k
Load Resistance, RL ( Ω )
2k
0.2
0.5
1
2
5
10
20
Frequency, f (kHz)
50
100 200
PS2603, PS2603L, PS2604, PS2604L
TYPICAL PERFORMANCE CURVES (TA = 25°)
CTR DEGRADATION
1.2
CTR Test condition
IF = 1 mA
∆CTR, Normalized
1.0
TA = 25 ˚C
0.8
TA = 60 ˚C
0.6
0.4
0.2
0
10
102
103
104
105
106
Time, Hr
OUTLINE DIMENSIONS (Units in mm)
PS2603, PS2604
PS2603L, PS2604L
10.16 MAX
10.16 MAX
6
6
4
4
φ1
1
3
7.62
6.5
1
3
3.8 MAX
0.05 to 0.2
7.62
0.65
2.8 MIN 4.55 MAX
3.8
MAX
φ1
1.34
2.54
MAX
2.54
0.50 ± 0.10
2.54
MAX
2.54
0 to 15˚
6.5
0.9± 0.25
9.60 ± 0.4
0.25 M
1.34 ± 0.10
0.25 M
PIN CONNECTIONS (Top View)
PS2603, PS2603L
6
5
4
6
1.
2.
3.
4.
5.
6.
1
2
PS2604, PS2604L
5
4
Anode
Cathode
NC
Emitter
Collector
Base
3
EXCLUSIVE NORTH AMERICAN AGENT FOR
1.
2.
3.
4.
5.
6.
1
2
Anode
Cathode
NC
Emitter
Collector
NC
3
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
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PRINTED IN USA ON RECYCLED PAPER -3/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE