PHOTOCOUPLER PS2707-1 AC INPUT RESPONSE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE −NEPOC SOP MULTI PHOTOCOUPLER SERIES Series− DESCRIPTION The PS2707-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This is mounted in a plastic SOP (Small Outline Package) for high density applications. This package has shield effect to cut off ambient light. FEATURES • AC input response • High collector to emitter voltage (VCEO = 120 V) • High isolation voltage (BV = 3 750 Vr.m.s.) • Small and thin (SOP) package • High-speed switching (tr, tf = 10 µs TYP.) • Ordering number of taping product: PS2707-1-F3, F4 • UL approved: File No. E72422 (S) • VDE0884 approved (Option) APPLICATIONS • Hybrid IC • Telephone/FAX • FA/OA equipment • Programmable logic controllers ORDERING INFORMATION (Solder Contains Lead) Part Number PS2707-1 Package 4-pin SOP Safety Standard Approval Standard specification products • UL approved PS2707-1-V 4-pin SOP VDE0884 specification products (Option) ORDERING INFORMATION (Pb-Free) Part Number PS2707-1-A Package 4-pin SOP Safety Standard Approval Standard specification products • UL approved PS2707-1-V-A 4-pin SOP Document No. PN10245EJ01V0DS (1st edition) (Previous No. P11311EJ5V0DS00) Date Published February 2003 CP(K) VDE0884 specification products (Option) The mark shows major revised points. PS2707-1 PACKAGE DIMENSIONS (in millimeters) PS2707-1 4.0±0.5 TOP VIEW 4 1 3 2 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 2 0.15 +0.10 –0.05 2.0 0.1±0.1 2.1±0.2 7.0±0.3 4.4 2.54 0.4 +0.10 –0.05 0.5±0.3 0.25 M Data Sheet PN10245EJ01V0DS PS2707-1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings Unit IF ± 50 mA ∆PD/°C 0.8 mW/°C PD 80 mW IFP ±1 A Collector to Emitter Voltage VCEO 120 V Emitter to Collector Voltage VECO 6 V IC 30 mA ∆PC/°C 1.5 mW/°C PC 150 mW BV 3 750 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C Diode Forward Current (DC) Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet PN10245EJ01V0DS 3 PS2707-1 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Transistor Symbol Conditions MIN. TYP. MAX. Unit 1.4 V Forward Voltage VF IF = ± 5 mA 1.1 Terminal Capacitance Ct V = 0 V, f = 1 MHz 60 Collector to Emitter Dark ICEO IF = 0 mA, VCE = 120 V CTR IF = ± 5 mA, VCE = 5 V 50 150 IF = ± 1 mA, VCE = 5 V 10 80 IF = ± 5 mA, VCE = 5 V 0.3 1.0 pF 100 nA 400 % Current Coupled Current Transfer Ratio (IC/IF) *1 CTR Ratio CTR1/ 3.0 CTR2 Collector Saturation Voltage VCE (sat) Isolation Resistance RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF *2 tr VCC = 5 V, IC = 2 mA, RL = 1 kΩ 10 µs Rise Time *2 Fall Time IF = ± 10 mA, IC = 2 mA tf IC1 VCE IC2 IF2 *2 Test circuit for switching time Pulse Input IF VCC PW = 100 µs Duty Cycle = 1/10 Input monitor 50 Ω 4 10 VOUT RL = 1 kΩ Data Sheet PN10245EJ01V0DS V Ω 11 10 *1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 IF1 0.3 PS2707-1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 100 75 50 25 25 0 50 75 200 150 1.5 mW/˚C 100 50 0 100 25 50 75 100 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 100 80 10 1 Forward Current IF (mA) Forward Current IF (mA) 60 TA = +100 ˚C +75 ˚C +50 ˚C +25 ˚C 0 ˚C –25 ˚C –55 ˚C 0.1 40 20 0 –20 –40 –60 0.8 1.0 1.2 1.4 –80 –1.6 –1.2 –0.8 –0.4 1.6 0 0.4 0.8 1.2 1.6 Forward Voltage VF (V) Forward Voltage VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 50 000 10 10 000 5 000 5 1 000 500 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 0.01 0.6 VCE = 40 V 24 V 10 V 100 50 10 5 1 0.5 0.1 –60 –40 –20 0 20 40 60 80 100 IF = 25 mA 10 mA 5 mA 2.5 mA 2 mA 1.5 mA 1 mA 1 0.5 0.5 mA 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE (sat) (V) Ambient Temperature TA (˚C) Data Sheet PN10245EJ01V0DS 5 PS2707-1 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 10 mA 5 mA 8 4 mA IF = Collector Current IC (mA) 10 6 3 mA 4 2 mA 2 1 mA 0.5 mA 2 0 4 6 8 Normalized Current Transfer Ratio CTR COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 10 1.0 0.8 0.6 0.4 0.0 –50 –25 0 Ambient Temperature TA (˚C) CURRENT TRANSFER RATIO vs. FORWARD CURRENT SWITCHING TIME vs. LOAD RESISTANCE 100 VCC = 5V, IC = 2 mA VCE = 5 V Switching Time t ( µ s) 250 200 150 100 tf tr 10 td ts 1 50 0 0.1 0.5 1 5 10 0.1 10 50 100 Forward Current IF (mA) 1k 10 k Load Resistance RL (Ω) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 1 000 1.2 IF = 5 mA, VCC = 5 V, CTR = 90 % 1.0 tf 100 Normalized Gain GV Switching Time t ( µ s) Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 25 50 75 100 0.2 Collector to Emitter Voltage VCE (V) 300 Current Transfer Ratio CTR (%) ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; 1.2 ts 10 tr 1 td RL = 1 kΩ 510 Ω 300 Ω 100 Ω 0.8 0.6 0.4 0.2 0.1 1 10 100 0.0 0.5 Load Resistance RL (kΩ) 6 1 5 10 50 100 Frequency f (kHz) Data Sheet PN10245EJ01V0DS 500 PS2707-1 LONG TERM CTR DEGRADATION 1.2 CTR (Relative Value) 1.0 0.8 IF = 1 mA, TA = 25 ˚C IF = 5 mA, TA = 25 ˚C IF = 20 mA, TA = 25 ˚C IF = 20 mA, TA = 60 ˚C 0.6 0.4 0.2 0.0 1 102 103 104 105 Time (Hr) Remark The graphs indicate nominal characteristics. Data Sheet PN10245EJ01V0DS 7 PS2707-1 TAPING SPECIFICATIONS (in millimeters) 1.55±0.1 2.9 MAX. 7.4±0.1 5.5±0.05 1.5+0.1 –0 12.0±0.2 2.0±0.05 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 2.4±0.1 4.6±0.1 0.3 8.0±0.1 Tape Direction PS2707-1-F4 PS2707-1-F3 Outline and Dimensions (Reel) φ 21.0±0.8 φ 13.0±0.2 R 1.0 φ 100±1.0 2.0±0.5 φ13.0±0.2 φ 330±2.0 2.0±0.5 13.5±1.0 17.5±1.0 11.9 to 15.4 Outer edge of flange Packing: 3 500 pcs/reel 8 Data Sheet PN10245EJ01V0DS PS2707-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260˚C MAX. 220˚C to 60 s 180˚C 120˚C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. Data Sheet PN10245EJ01V0DS 9 PS2707-1 USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. 10 Data Sheet PN10245EJ01V0DS PS2707-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Speck Unit Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. IV for rated line voltages ≤ 600 Vr.m.s. III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) UIORM 710 Vpeak Upr 850 Vpeak Upr 1 140 Vpeak UTR 6 000 Vpeak Upr = 1.2 × UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices test) Upr = 1.6 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) 2 Clearance distance >5 mm Creepage distance >5 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg −55 to +150 °C Operating temperature range TA –55 to +100 °C Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C Ris MIN. 10 12 Ω VIO = 500 V dc at TA MAX. at least 100 °C Ris MIN. 10 11 Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Tsi 150 °C Current (input current IF, Psi = 0) Isi 200 mA Power (output or total power dissipation) Psi 300 mW Ris MIN. 10 Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) Data Sheet PN10245EJ01V0DS 9 Ω 11 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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