RENESAS NP40N10YDF-E1-AY

Preliminary Data Sheet
NP40N10YDF, NP40N10VDF, NP40N10PDF
MOS FIELD EFFECT TRANSISTOR
R07DS0361EJ0100
Rev.1.00
Jun 07, 2011
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF)
⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF)
⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF)
• Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V)
• Logic level drive type
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
∗1
NP40N10YDF-E1-AY
NP40N10YDF-E2-AY ∗1
NP40N10VDF-E1-AY ∗1
NP40N10VDF-E2-AY ∗1
NP40N10PDF-E1-AY ∗1
NP40N10PDF-E2-AY ∗1
Packing
Pure Sn (Tin)
Tape 2500 p/reel
Pure Sn (Tin)
Tape 2500 p/reel
Pure Sn (Tin)
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Taping (E1 type)
Taping (E2 type)
Taping (E1 type)
Taping (E2 type)
Package
8-pin HSON
TO-252 (MP-3ZP)
TO-263 (MP-25ZP)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
Page 1 of 9
NP40N10YDF, NP40N10VDF, NP40N10PDF
Chapter Title
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
NP40N10YDF
Total Power Dissipation (TA = 25°C) ∗2
PT2
Ratings
100
±20
±40
±80
120
1.0
NP40N10VDF
Total Power Dissipation (TA = 25°C) ∗2
1.2
NP40N10PDF
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
1.8
Tch
Tstg
IAS
EAS
Unit
V
V
A
A
W
W
175
−55 to +175
25
61
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
NP40N10YDF
NP40N10VDF
NP40N10PDF
1.25
150
125
83.3
°C/W
°C/W
°C/W
°C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗
2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area (35 μm)
*3. Tch(start) = 25°C, VDD = 50 V, RG = 25 Ω, L = 100 μH, VGS = 20 V → 0 V
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
Page 2 of 9
NP40N10YDF, NP40N10VDF, NP40N10PDF
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance ∗1
Drain to Source NP40N10YDF
On-state
Resistance ∗1
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)1
RDS(on)2
RDS(on)3
NP40N10VDF
NP40N10PDF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗1
Reverse Recovery Time
Reverse Recovery Charge
Min
Typ
1.5
20
2.0
40
21
23
24
21
23
24
21
23
24
2100
200
80
15
16
60
5
47
8
12
0.9
67
162
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Max
1
±100
2.5
Unit
μA
nA
V
S
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
25
30
36
26
31
37
27
32
38
3150
300
144
33
40
120
13
71
1.5
Test Conditions
VDS = 100 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μ A
VDS = 5.0 V, ID = 20 A
VGS = 10 V, ID = 20 A
VGS = 5.0 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 20 A
VGS = 5.0 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 20 A
VGS = 5.0 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 50 V, ID = 20 A,
VGS = 10 V,
RG = 0 Ω
VDD = 80 V,
VGS = 10 V,
ID = 40 A
IF = 40 A, VGS = 0 V
IF = 40 A, VGS = 0 V,
di/dt = 100 A/μ s
Note: ∗1. Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
90%
VDS
VGS
0
VDS
10%
0
10%
Wave Form
VDS
ID
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
PG.
D.U.T.
IG = 2 mA
RL
50 Ω
VDD
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
Page 3 of 9
NP40N10YDF, NP40N10VDF, NP40N10PDF
Chapter Title
DERATING FACTOR OF FORWARD BIAS
TOTAL POWER DISSIPATION vs.
SAFE OPERATING AREA
CASE TEMPERATURE
120
140
100
120
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
Typical Characteristics (TA = 25°C)
80
60
40
20
0
0
25
50
75
100
125
150
175
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID - Drain Current - A
100
RDS(ON) Limited
(VGS = 10V)
PW = 100 μs
ID(Pulse)
10
Power Disspation Limited
1
0.1
1 ms
Secondary Brakedown Limited
TC = 25°C
10 ms
Single Pulse
0.1
1
10
100
VDS - Drain to Source Voltage - V
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
Page 4 of 9
NP40N10YDF, NP40N10VDF, NP40N10PDF
Chapter Title
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10YDF)
rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A) = 150°C/W
100
10
Rth(ch-C) = 1.25°C/W
1
Single pulse
Mounted on glass epoxy substrate of 40 mm×40 mm×1.6 mmt
with 4% copper area (35 μm)
0.1
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10VDF)
rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A) = 125°C/W
100
10
Rth(ch-C) = 1.25°C/W
1
Single pulse
Mounted on glass epoxy substrate of 40 mm×40 mm×1.6 mmt
with 4% copper area (35 μm)
0.1
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
rth(t) - Transient Thermal Resistance - °C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10PDF)
1000
Rth(ch-A) = 83.3°C/W
100
10
Rth(ch-C) = 1.25°C/W
1
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
Page 5 of 9
NP40N10YDF, NP40N10VDF, NP40N10PDF
Chapter Title
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
100
100
VGS = 10 V
80
VDS = 10 V
Pulsed
5.0 V
ID - Drain Current - A
ID - Drain Current - A
90
4.5 V
70
60
50
40
30
20
10
TA = −55°C
−25°C
25°C
75°C
100°C
125°C
150°C
175°C
1
0.1
0.01
Pulsed
10
0.001
0
0
1
2
3
4
5
0
6
VDS = VGS
ID = 250 μA
2
1.5
1
0.5
0
-50
0
50
100
150
100
10
1
0.1
5.0 V
10 V
30
20
10
Pulsed
0
10
ID - Drain Current - A
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
10
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS = 4.5 V
1
1
ID - Drain Current - A
60
0.1
5
VDS = 5 V
Pulsed
0.01
200
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
4
TA = −55°C
−25°C
25°C
75°C
100°C
125°C
150°C
175°C
Tch - Channel Temperature - °C
50
3
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
-100
2
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
2.5
1
45
40
ID = 40 A
35
20 A
30
8A
25
20
15
10
Pulsed
5
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Page 6 of 9
NP40N10YDF, NP40N10VDF, NP40N10PDF
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
70
VGS = 4.5 V
5.0 V
10 V
60
50
Ciss, Coss, Crss - Capacitance - pF
40
30
20
ID = 20 A
Pulsed
10
0
-100
-50
0
50
100
150
100
Coss
10
1
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
90
100
VDS - Drain to Source Voltage - V
VDD = 50 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
tr
10
tf
1
12
VDD = 80 V
50 V
20 V
80
70
10
60
8
VGS
50
6
40
30
4
20
2
10
ID = 40 A
VDS
0
0.1
1
10
100
0
0
ID - Drain Current - A
100
trr - Reverse Recovery Time - ns
1
Pulsed
0.1
0.4
0.6
0.8
VF(S-D) - Source to Drain Voltage - V
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
30
40
50
100
0V
10
0.2
20
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
VGS = 10 V
0
10
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF - Diode Forward Current - A
Crss
VGS = 0 V
f = 1MHz
200
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
Ciss
1
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
1
10
100
IF - Drain Current - A
Page 7 of 9
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
NP40N10YDF, NP40N10VDF, NP40N10PDF
Chapter Title
Package Drawings (Unit: mm)
1.27
8-pin HSON (Mass: 0.13 g TYP.)
1
5
+0.1
5.0 ±0.2
6
4
0.42 −0.05
7
3
5.15 ±0.2
8
2
6.0 ±0.2
0.10 S
1.45 MAX.
0.73
0.4
0.42 ±0.05
0
+0.05
−0
0.10 M
5.4 ±0.2
3.8 ±0.2
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
3.18 ±0.2
0.8 ±0.15
0.6 ±0.15
TO-252 (MP-3ZP) (Mass: 0.27 g TYP.)
2.3±0.1
1.0 TYP.
6.5±0.2
5.1 TYP.
4.3 MIN.
0.5±0.1
No Plating
2
3
0.8
1
1.14 MAX.
0.51 MIN.
1.13
6.1±0.2
10.4 MAX. (9.8 TYP.)
4.0 MIN.
4
No Plating
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
0 to 0.25
0.5±0.1
0.76±0.12
2.3
1.0
Page 8 of 9
NP40N10YDF, NP40N10VDF, NP40N10PDF
Chapter Title
10.0 ±0.3
7.88 MIN.
4.45 ±0.2
1.3 ±0.2
0.5
9.15 ±0.3
8.0 TYP.
4
15.25 ±0.5
No plating
1.35 ±0.3
TO-263 (MP-25ZP) (Mass: 1.48 g TYP.)
0.025
to 0.25
.2
0 to 8
˚
0.25
1 2
3
2.5
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.54 ±0.25
0.6 ±0
0.75 ±0.2
Equivalent Circuit
Drain
Body
Diode
Gate
Source
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0361EJ0100 Rev.1.00
Jun 07, 2011
Page 9 of 9
Revision History
NP40N10YDF, NP40N10VDF, NP40N10PDF Data Sheet
Rev.
Date
Page
1.00
Jun 07, 2011
−
Description
Summary
First Edition Issued
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C-1
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