Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF MOS FIELD EFFECT TRANSISTOR R07DS0361EJ0100 Rev.1.00 Jun 07, 2011 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF) • Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V) • Logic level drive type • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating ∗1 NP40N10YDF-E1-AY NP40N10YDF-E2-AY ∗1 NP40N10VDF-E1-AY ∗1 NP40N10VDF-E2-AY ∗1 NP40N10PDF-E1-AY ∗1 NP40N10PDF-E2-AY ∗1 Packing Pure Sn (Tin) Tape 2500 p/reel Pure Sn (Tin) Tape 2500 p/reel Pure Sn (Tin) Tape 800 p/reel Taping (E1 type) Taping (E2 type) Taping (E1 type) Taping (E2 type) Taping (E1 type) Taping (E2 type) Package 8-pin HSON TO-252 (MP-3ZP) TO-263 (MP-25ZP) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) R07DS0361EJ0100 Rev.1.00 Jun 07, 2011 Page 1 of 9 NP40N10YDF, NP40N10VDF, NP40N10PDF Chapter Title Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Symbol VDSS VGSS ID(DC) ID(pulse) PT1 NP40N10YDF Total Power Dissipation (TA = 25°C) ∗2 PT2 Ratings 100 ±20 ±40 ±80 120 1.0 NP40N10VDF Total Power Dissipation (TA = 25°C) ∗2 1.2 NP40N10PDF Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 1.8 Tch Tstg IAS EAS Unit V V A A W W 175 −55 to +175 25 61 °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-C) Rth(ch-A) NP40N10YDF NP40N10VDF NP40N10PDF 1.25 150 125 83.3 °C/W °C/W °C/W °C/W Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area (35 μm) *3. Tch(start) = 25°C, VDD = 50 V, RG = 25 Ω, L = 100 μH, VGS = 20 V → 0 V R07DS0361EJ0100 Rev.1.00 Jun 07, 2011 Page 2 of 9 NP40N10YDF, NP40N10VDF, NP40N10PDF Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance ∗1 Drain to Source NP40N10YDF On-state Resistance ∗1 Symbol IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)1 RDS(on)2 RDS(on)3 NP40N10VDF NP40N10PDF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Min Typ 1.5 20 2.0 40 21 23 24 21 23 24 21 23 24 2100 200 80 15 16 60 5 47 8 12 0.9 67 162 Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr Max 1 ±100 2.5 Unit μA nA V S mΩ mΩ mΩ mΩ mΩ mΩ mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC 25 30 36 26 31 37 27 32 38 3150 300 144 33 40 120 13 71 1.5 Test Conditions VDS = 100 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μ A VDS = 5.0 V, ID = 20 A VGS = 10 V, ID = 20 A VGS = 5.0 V, ID = 20 A VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 20 A VGS = 5.0 V, ID = 20 A VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 20 A VGS = 5.0 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 50 V, ID = 20 A, VGS = 10 V, RG = 0 Ω VDD = 80 V, VGS = 10 V, ID = 40 A IF = 40 A, VGS = 0 V IF = 40 A, VGS = 0 V, di/dt = 100 A/μ s Note: ∗1. Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS 90% VDS VGS 0 VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS0361EJ0100 Rev.1.00 Jun 07, 2011 Page 3 of 9 NP40N10YDF, NP40N10VDF, NP40N10PDF Chapter Title DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs. SAFE OPERATING AREA CASE TEMPERATURE 120 140 100 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % Typical Characteristics (TA = 25°C) 80 60 40 20 0 0 25 50 75 100 125 150 175 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID - Drain Current - A 100 RDS(ON) Limited (VGS = 10V) PW = 100 μs ID(Pulse) 10 Power Disspation Limited 1 0.1 1 ms Secondary Brakedown Limited TC = 25°C 10 ms Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V R07DS0361EJ0100 Rev.1.00 Jun 07, 2011 Page 4 of 9 NP40N10YDF, NP40N10VDF, NP40N10PDF Chapter Title TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10YDF) rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 150°C/W 100 10 Rth(ch-C) = 1.25°C/W 1 Single pulse Mounted on glass epoxy substrate of 40 mm×40 mm×1.6 mmt with 4% copper area (35 μm) 0.1 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10VDF) rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 1.25°C/W 1 Single pulse Mounted on glass epoxy substrate of 40 mm×40 mm×1.6 mmt with 4% copper area (35 μm) 0.1 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s rth(t) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10PDF) 1000 Rth(ch-A) = 83.3°C/W 100 10 Rth(ch-C) = 1.25°C/W 1 0.1 Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0361EJ0100 Rev.1.00 Jun 07, 2011 Page 5 of 9 NP40N10YDF, NP40N10VDF, NP40N10PDF Chapter Title DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 100 100 VGS = 10 V 80 VDS = 10 V Pulsed 5.0 V ID - Drain Current - A ID - Drain Current - A 90 4.5 V 70 60 50 40 30 20 10 TA = −55°C −25°C 25°C 75°C 100°C 125°C 150°C 175°C 1 0.1 0.01 Pulsed 10 0.001 0 0 1 2 3 4 5 0 6 VDS = VGS ID = 250 μA 2 1.5 1 0.5 0 -50 0 50 100 150 100 10 1 0.1 5.0 V 10 V 30 20 10 Pulsed 0 10 ID - Drain Current - A R07DS0361EJ0100 Rev.1.00 Jun 07, 2011 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ VGS = 4.5 V 1 1 ID - Drain Current - A 60 0.1 5 VDS = 5 V Pulsed 0.01 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 4 TA = −55°C −25°C 25°C 75°C 100°C 125°C 150°C 175°C Tch - Channel Temperature - °C 50 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE -100 2 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 2.5 1 45 40 ID = 40 A 35 20 A 30 8A 25 20 15 10 Pulsed 5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 6 of 9 NP40N10YDF, NP40N10VDF, NP40N10PDF Chapter Title CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 70 VGS = 4.5 V 5.0 V 10 V 60 50 Ciss, Coss, Crss - Capacitance - pF 40 30 20 ID = 20 A Pulsed 10 0 -100 -50 0 50 100 150 100 Coss 10 1 0.01 0.1 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 90 100 VDS - Drain to Source Voltage - V VDD = 50 V VGS = 10 V RG = 0 Ω td(off) td(on) tr 10 tf 1 12 VDD = 80 V 50 V 20 V 80 70 10 60 8 VGS 50 6 40 30 4 20 2 10 ID = 40 A VDS 0 0.1 1 10 100 0 0 ID - Drain Current - A 100 trr - Reverse Recovery Time - ns 1 Pulsed 0.1 0.4 0.6 0.8 VF(S-D) - Source to Drain Voltage - V R07DS0361EJ0100 Rev.1.00 Jun 07, 2011 30 40 50 100 0V 10 0.2 20 REVERSE RECOVERY TIME vs. DRAIN CURRENT VGS = 10 V 0 10 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A Crss VGS = 0 V f = 1MHz 200 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss 1 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 1 10 100 IF - Drain Current - A Page 7 of 9 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE NP40N10YDF, NP40N10VDF, NP40N10PDF Chapter Title Package Drawings (Unit: mm) 1.27 8-pin HSON (Mass: 0.13 g TYP.) 1 5 +0.1 5.0 ±0.2 6 4 0.42 −0.05 7 3 5.15 ±0.2 8 2 6.0 ±0.2 0.10 S 1.45 MAX. 0.73 0.4 0.42 ±0.05 0 +0.05 −0 0.10 M 5.4 ±0.2 3.8 ±0.2 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 3.18 ±0.2 0.8 ±0.15 0.6 ±0.15 TO-252 (MP-3ZP) (Mass: 0.27 g TYP.) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 2 3 0.8 1 1.14 MAX. 0.51 MIN. 1.13 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 No Plating 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) R07DS0361EJ0100 Rev.1.00 Jun 07, 2011 0 to 0.25 0.5±0.1 0.76±0.12 2.3 1.0 Page 8 of 9 NP40N10YDF, NP40N10VDF, NP40N10PDF Chapter Title 10.0 ±0.3 7.88 MIN. 4.45 ±0.2 1.3 ±0.2 0.5 9.15 ±0.3 8.0 TYP. 4 15.25 ±0.5 No plating 1.35 ±0.3 TO-263 (MP-25ZP) (Mass: 1.48 g TYP.) 0.025 to 0.25 .2 0 to 8 ˚ 0.25 1 2 3 2.5 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.54 ±0.25 0.6 ±0 0.75 ±0.2 Equivalent Circuit Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS0361EJ0100 Rev.1.00 Jun 07, 2011 Page 9 of 9 Revision History NP40N10YDF, NP40N10VDF, NP40N10PDF Data Sheet Rev. 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