Preliminary Data Sheet N0413N R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No. N0413N-ZK-E1-AY ∗1 Lead Plating Pure Sn (Tin) N0413N-ZK-E2-AY ∗1 Packing Tape 800 p/reel Package TO-263 1.39 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 40 ±20 ±100 ±400 119 1.5 150 −55 to +150 55 300 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-C) Rth(ch-A) 1.05 83.3 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 → 0 V, L = 100 μH R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 Page 1 of 6 N0413N Chapter Title Electrical Characteristics (TA = 25°C, all terminals are connected) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance ∗1 Symbol IDSS IGSS VGS(off) | yfs | MIN. TYP. MAX. 1 ±100 4.0 Drain to Source On-state Resistance ∗1 RDS(on) 2.3 3.3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss 5550 580 320 pF pF pF VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time td(on) tr td(off) tf QG QGS QGD VF(S-D) trr 29.0 15.0 64.0 13.0 100 26 32 VDD = 20 V, ID = 50 A, VGS = 10 V, RG = 0 Ω 40 ns ns ns ns nC nC nC V ns Reverse Recovery Charge Qrr 44 nC 2.0 26 1.5 Unit μA nA V S mΩ Test Conditions VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 50 A VGS = 10 V, ID = 50 A VDD = 32 V, VGS = 10 V, ID = 100 A IF = 100 A, VGS = 0 V IF = 50 A, VGS = 0 V, di/dt = 100 A/μ s ∗ Note: 1. Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS 0 10% 10% tr td(off) Wave Form τ VDD Starting Tch 90% VDS VGS 0 τ = 1 μs Duty Cycle ≤ 1% td(on) ton tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 RL VDD Page 2 of 6 N0413N Chapter Title DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA CASE TEMPERATURE 140 140 120 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % Typical Characteristics (TA = 25°C) 100 80 60 40 20 100 80 60 40 20 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 1000 RDS(on) Limited PW = 300 µs 1 ms 100 10 ms 10 Power Dissipation Limited 1 TC = 25°C 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Single pulse Rth(ch-A) = 83.3°C/W 100 10 Rth(ch-C) = 1.05°C/W 1 0.1 0.01 0.1 m 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 Page 3 of 6 N0413N Chapter Title DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 450 100 VGS = 10 V 400 ID - Drain Current - A ID - Drain Current - A TA = 125°C 75°C 25°C −25°C 10 350 300 250 200 150 100 50 1 0.1 0.01 VDS = 10 V Pulsed Pulsed 0 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 VDS - Drain to Source Voltage - V 3 4 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3.5 3 2.5 2 1.5 1 VDS = 10 V ID = 1.0 mA 0.5 0 -50 0 50 100 150 | yfs | - Forward Transfer Admittance - S 100 TA = 125°C 75°C 25°C -25°C 10 1 0.1 VDS = 10 V Pulsed 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 5 4 VGS = 10 V 3 2 1 Pulsed 0 1 10 100 ID - Drain Current - A R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 1000 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate to Source Cut-off Voltage - V 2 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ 1 40 ID = 50 A Pulsed 35 30 25 20 15 10 5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 N0413N Chapter Title CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 5 10000 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 3 2 VGS = 10 V ID = 50 A Pulsed 1 1000 Coss Crss 100 VGS = 0 V f = 1.0 MHz 10 0 -50 0 50 100 0.1 150 1 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS 14 VGS - Gate to Source Voltage - V tf td(off) 100 td(on) 10 tr VDD = 20 V VGS = 10 V RG = 0 Ω 1 12 VDD = 8 V 20 V 32 V 10 8 6 4 2 ID = 100 A 0 0.1 1 10 100 0 ID - Drain Current - A 20 40 60 80 100 120 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 1000 100 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 10 Tch - Channel Temperature - °C 1000 td (on), tr, td (off), tf - Switching Time - ns Ciss VGS = 10 V 10 0V 1 0.1 Pulsed 0.01 0 0.4 0.8 1.2 VF(S-D) - Source to Drain Voltage - V R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 1.6 10 1 VGS = 0 V di/dt = 100 A/µs 0.1 0.1 1 10 100 IF - Diode Forward Current - A Page 5 of 6 N0413N Chapter Title Package Drawing (Unit: mm) TO-263 4.8 MAX. 1.2±0.3 10.0±0.3 7.8 MIN. 1.3±0.2 0 to 0.25 2.00 1.27±0.2 2.4±0.2 0.5±0.2 2.54 1 0.8±0.1 2 2.3±0.3 9.2±0.3 15.3±0.5 6.7±0.3 4 0.254 3 1. Gate 2. Drain 3. Source 4. Fin (Drain) Equivalent Circuit Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 Page 6 of 6 Revision History N0413N Data Sheet Rev. Date Page 1.00 Nov 07, 2011 − Description Summary First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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