DMC2004VK Green COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage VGS(th) <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ESD Protected Gate Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (approximate) • • • • D1 SOT-563 G2 S2 Q2 Q1 S1 ESD protected D2 TOP VIEW Internal Schematic BOTTOM VIEW TOP VIEW G1 Ordering Information (Note 4) Part Number DMC2004VK-7 Notes: Case SOT-563 Packaging 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information CAB = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September Date Code Key Year Code Month Code 2007 U Jan 1 DMC2004VK Document number: DS30925 Rev. 6 - 2 2008 V Feb 2 Mar 3 2009 W Apr 4 May 5 2010 X Jun 6 1 of 8 www.diodes.com Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D January 2013 © Diodes Incorporated DMC2004VK Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage TA = +25°C TA = +85°C Drain Current (Note 5) ID Value 20 ±8 670 480 Unit V V Value -20 ±8 -530 -380 Unit V V mA Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage TA = +25°C TA = +85°C Drain Current (Note 5) ID mA Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 5) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Value 0.45 281 210 1 129 97 -55 to +150 RθJA Total Power Dissipation (Note 6) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) RθJA Operating and Storage Temperature Range TJ, TSTG Units W °C/W °C/W W °C/W °C/W °C Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance (Note 8) Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 ± 1.0 V µA µA VGS = 0V, ID = 10µA VDS = 16V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V 0.4 0.5 0.7 0.55 0.70 0.90 Ω |Yfs| VSD ⎯ ⎯ ⎯ 200 0.5 ⎯ ⎯ ⎯ 1.2 mS V VDS = VGS, ID = 250µA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 25 20 pF pF pF RDS (ON) Test Condition VDS = 16V, VGS = 0V f = 1.0MHz 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMC2004VK Document number: DS30925 Rev. 6 - 2 2 of 8 www.diodes.com January 2013 © Diodes Incorporated DMC2004VK Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ± 1.0 V µA µA VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 ⎯ -1.0 V RDS (ON) ⎯ 0.7 1.1 1.7 0.9 1.4 2.0 Ω |Yfs| VSD 200 -0.5 ⎯ ⎯ ⎯ -1.2 mS V VDS = VGS, ID = -250µA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = 0.2A VGS = 0V, IS = -115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 175 30 20 pF pF pF VDS = -16V, VGS = 0V f = 1.0MHz ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Q1, N-CHANNEL 0 0 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS(th), GATE THRESHOLD VOLTAGE (V) VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature DMC2004VK Document number: DS30925 Rev. 6 - 2 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 3 of 8 www.diodes.com January 2013 © Diodes Incorporated DMC2004VK 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current Q1, N-CHANNEL (cont.) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current DMC2004VK Document number: DS30925 Rev. 6 - 2 4 of 8 www.diodes.com VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance January 2013 © Diodes Incorporated DMC2004VK -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) Q2, P-CHANNEL 0 0 -VDS, DRAIN SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) -VGS, GATE SOURCE VOLTAGE (V) Fig. 12 Typical Transfer Characteristics TA, AMBIENT TEMPERATURE (°C) Fig. 13 Gate Threshold Voltage vs. Ambient Temperature -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 16 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage -ID, DRAIN-SOURCE CURRENT (A) Fig. 15 Static Drain-Source On-Resistance vs. Drain Current DMC2004VK Document number: DS30925 Rev. 6 - 2 5 of 8 www.diodes.com January 2013 © Diodes Incorporated DMC2004VK Q2, P-CHANNEL (cont.) TA, AMBIENT TEMPERATURE (°C) Fig. 17 Static Drain-Source On-State Resistance vs. Ambient Temperature -ID, DRAIN CURRENT (A) Fig. 19 Forward Transfer Admittance vs. Drain Current DMC2004VK Document number: DS30925 Rev. 6 - 2 6 of 8 www.diodes.com -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Capacitance January 2013 © Diodes Incorporated DMC2004VK Package Outline Dimensions A B SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 1.7 C1 0.5 C2 X DMC2004VK Document number: DS30925 Rev. 6 - 2 7 of 8 www.diodes.com January 2013 © Diodes Incorporated DMC2004VK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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