DMC2004VK - Diodes Incorporated

 DMC2004VK
Green
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage VGS(th) <1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Ultra-Small Surface Mount Package
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
ESD Protected Gate
Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (approximate)
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D1
SOT-563
G2
S2
Q2
Q1
S1
ESD protected
D2
TOP VIEW
Internal Schematic
BOTTOM VIEW
TOP VIEW
G1
Ordering Information (Note 4)
Part Number
DMC2004VK-7
Notes:
Case
SOT-563
Packaging
3000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CAB = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
DMC2004VK
Document number: DS30925 Rev. 6 - 2
2008
V
Feb
2
Mar
3
2009
W
Apr
4
May
5
2010
X
Jun
6
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Jul
7
2011
Y
Aug
8
Sep
9
2012
Z
Oct
O
Nov
N
Dec
D
January 2013
© Diodes Incorporated
DMC2004VK
Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain Source Voltage
Gate-Source Voltage
TA = +25°C
TA = +85°C
Drain Current (Note 5)
ID
Value
20
±8
670
480
Unit
V
V
Value
-20
±8
-530
-380
Unit
V
V
mA
Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain Source Voltage
Gate-Source Voltage
TA = +25°C
TA = +85°C
Drain Current (Note 5)
ID
mA
Thermal Characteristics
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Value
0.45
281
210
1
129
97
-55 to +150
RθJA
Total Power Dissipation (Note 6)
PD
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
Operating and Storage Temperature Range
TJ, TSTG
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance (Note 8)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
⎯
⎯
⎯
⎯
⎯
⎯
1.0
± 1.0
V
µA
µA
VGS = 0V, ID = 10µA
VDS = 16V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS(th)
0.5
⎯
1.0
V
0.4
0.5
0.7
0.55
0.70
0.90
Ω
|Yfs|
VSD
⎯
⎯
⎯
200
0.5
⎯
⎯
⎯
1.2
mS
V
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
150
25
20
pF
pF
pF
RDS (ON)
Test Condition
VDS = 16V, VGS = 0V
f = 1.0MHz
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMC2004VK
Document number: DS30925 Rev. 6 - 2
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© Diodes Incorporated
DMC2004VK
Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
-1.0
± 1.0
V
µA
µA
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS(th)
-0.5
⎯
-1.0
V
RDS (ON)
⎯
0.7
1.1
1.7
0.9
1.4
2.0
Ω
|Yfs|
VSD
200
-0.5
⎯
⎯
⎯
-1.2
mS
V
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VDS =10V, ID = 0.2A
VGS = 0V, IS = -115mA
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
175
30
20
pF
pF
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Q1, N-CHANNEL
0
0
VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
VGS(th), GATE THRESHOLD VOLTAGE (V)
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Ambient Temperature
DMC2004VK
Document number: DS30925 Rev. 6 - 2
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
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ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
Q1, N-CHANNEL (cont.)
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
ID, DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
DMC2004VK
Document number: DS30925 Rev. 6 - 2
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VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
January 2013
© Diodes Incorporated
DMC2004VK
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
Q2, P-CHANNEL
0
0
-VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 11 Typical Output Characteristics
-VGS(th), GATE THRESHOLD VOLTAGE (V)
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 12 Typical Transfer Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 13 Gate Threshold Voltage vs. Ambient Temperature
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 14 Static Drain-Source On-Resistance vs. Drain Current
10
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 16 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 15 Static Drain-Source On-Resistance vs.
Drain Current
DMC2004VK
Document number: DS30925 Rev. 6 - 2
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DMC2004VK
Q2, P-CHANNEL (cont.)
TA, AMBIENT TEMPERATURE (°C)
Fig. 17 Static Drain-Source On-State Resistance
vs. Ambient Temperature
-ID, DRAIN CURRENT (A)
Fig. 19 Forward Transfer Admittance vs. Drain Current
DMC2004VK
Document number: DS30925 Rev. 6 - 2
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-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Capacitance
January 2013
© Diodes Incorporated
DMC2004VK
Package Outline Dimensions
A
B
SOT563
Dim Min
Max
Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
C
D
G
M
K
H
L
Suggested Pad Layout
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
1.7
C1
0.5
C2
X
DMC2004VK
Document number: DS30925 Rev. 6 - 2
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DMC2004VK
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
DMC2004VK
Document number: DS30925 Rev. 6 - 2
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January 2013
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