DMN5L06WK N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage (1.0V max) Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) • • • • • • SOT-323 D G ESD protected up to 2kV Maximum Ratings TOP VIEW TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Thermal Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 1. 2. 3. 4. 5. Symbol PD RθJA TJ, TSTG Value 250 500 -65 to +150 Unit mW °C/W °C mA @TA = 25°C unless otherwise specified Electrical Characteristics Gate-Body Leakage Unit V V ID Value 50 ±20 300 800 Continuous Pulsed (Note 3) Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: S @TA = 25°C unless otherwise specified @ TC = 25°C Symbol Min Typ Max Unit BVDSS IDSS 50 ⎯ ⎯ ⎯ ⎯ 60 V nA IGSS ⎯ ⎯ 1 500 50 μA nA nA VGS(th) 0.49 V 3.0 2.5 2.0 Ω ID(ON) |Yfs| VSD ⎯ ⎯ ⎯ ⎯ 1.4 ⎯ ⎯ 1.0 ⎯ ⎯ ⎯ 0.5 200 0.5 ⎯ ⎯ 1.4 A mS V Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 25 5.0 pF pF pF RDS (ON) Test Condition VGS = 0V, ID = 10μA VDS = 50V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Halogen and Antimony Free Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN5L06WK Document number: DS30928 Rev. 6 - 2 1 of 5 www.diodes.com April 2009 © Diodes Incorporated DMN5L06WK VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 0 -50 75 100 125 150 -25 25 50 0 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN5L06WK Document number: DS30928 Rev. 6 - 2 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 2 of 5 www.diodes.com April 2009 © Diodes Incorporated RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) IDR, REVERSE DRAIN CURRENT (A) DMN5L06WK IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (°C) Fig. 11 Derating Curve - Total DMN5L06WK Document number: DS30928 Rev. 6 - 2 150 3 of 5 www.diodes.com April 2009 © Diodes Incorporated DMN5L06WK Ordering Information (Note 6) Part Number DMN5L06WK-7 Notes: Case SOT-323 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) Date Code Key Year Code 2006 T Month Code 2007 U Jan 1 Feb 2 2008 V Mar 3 Apr 4 May 5 2009 W Jun 6 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D Package Outline Dimensions A SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm B C G H K M J L D Suggested Pad Layout Y Z C X DMN5L06WK Document number: DS30928 Rev. 6 - 2 Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E 4 of 5 www.diodes.com April 2009 © Diodes Incorporated DMN5L06WK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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