DMG1016V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage VGS(th) <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Protected Gate to 2.5kV HBM "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 7 Ordering Information: See Page 7 Weight: 0.006 grams (approximate) • • • • • • SOT-563 D1 G2 S2 Q2 Q1 S1 ESD PROTECTED TO 2.5kV HBM TOP VIEW Maximum Ratings N-CHANNEL – Q1 BOTTOM VIEW G1 D2 TOP VIEW Internal Schematic @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Value 20 ±6 870 630 Unit V V Unit V V ID Value -20 ±6 -640 -460 Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Symbol PD RθJA Value 530 235 Unit mW °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Drain Source Voltage Gate-Source Voltage TA = 25°C TA = 85°C Drain Current (Note 1) Maximum Ratings P-CHANNEL – Q2 Characteristic Symbol VDSS VGSS TA = 25°C TA = 85°C Drain Current (Note 1) Notes: mA @TA = 25°C unless otherwise specified Drain Source Voltage Gate-Source Voltage Thermal Characteristics ID mA @TA = 25°C unless otherwise specified 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMG1016V Document number: DS31767 Rev. 3 - 2 1 of 8 www.diodes.com May 2009 © Diodes Incorporated DMG1016V Electrical Characteristics N-CHANNEL – Q1 NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 ± 1.0 V nA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V 0.3 0.4 0.5 0.4 0.5 0.7 Ω |Yfs| VSD ⎯ ⎯ ⎯ ⎯ ⎯ 1.4 0.7 ⎯ 1.2 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 400mA VGS = 0V, IS = 150mA Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 60.67 9.68 5.37 736.6 93.6 116.6 5.1 7.4 26.7 12.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF VDS = 16V, VGS = 0V f = 1.0MHz pC VGS = 4.5V, VDS = 10V, ID = 250mA ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA RDS (ON) Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Test Condition Electrical Characteristics P-CHANNEL – Q2 @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -100 ± 2.0 V nA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 ⎯ -1.0 V RDS (ON) ⎯ 0.5 0.7 1.0 0.7 0.9 1.3 Ω |Yfs| VSD ⎯ ⎯ -0.9 -0.8 ⎯ -1.2 S V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = -250mA VGS = 0V, IS = -150mA Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 59.76 12.07 6.36 622.4 100.3 132.2 5.1 8.1 28.4 20.7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF VDS = -16V, VGS = 0V f = 1.0MHz pC VGS = -4.5V, VDS = -10V, ID = -250mA ns VDD = -10V, VGS = -4.5V, RL = 47Ω, RG = 10Ω, ID = -200mA 4. Short duration pulse test used to minimize self-heating effect. DMG1016V Document number: DS31767 Rev. 3 - 2 2 of 8 www.diodes.com May 2009 © Diodes Incorporated DMG1016V N-CHANNEL – Q1 1.0 1.0 VGS = 8.0V VGS = 4.5V 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V 0.6 VGS = 2.5V VGS = 2.0V 0.4 VGS = 1.5V 0.6 0.4 T A = 150°C 0.2 0.2 TA = 125°C VGS = 1.2V TA = -55°C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.8 0.7 0.6 0.5 0.4 VGS = 1.8V 0.3 VGS = 2.5V VGS = 4.5V 0.2 0.1 0 0 T A = 85°C TA = 25°C 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2 0.5 TA = 150°C 0.4 T A = 125°C TA = 85°C 0.3 T A = 25°C 0.2 TA = -55°C 0.1 0 0 1.0 1.7 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.0 0.8 1.5 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 0.8 1.3 1.1 0.9 VGS = 4.5V ID = 500mA 0.6 VGS = 2.5V ID = 250mA 0.4 VGS = 4.5V ID = 500mA 0.2 VGS = 2.5V ID = 250mA 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG1016V Document number: DS31767 Rev. 3 - 2 3 of 8 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature May 2009 © Diodes Incorporated DMG1016V N-CHANNEL – Q1 (continued) IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 1.2 0.8 ID = 1mA ID = 250µA 0.4 0.8 TA = 25°C 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 100 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 TA = 150°C 10 IDSS, LEAKAGE CURRENT (nA) Ciss C, CAPACITANCE (pF) Coss C rss 100 TA = 125°C T A = 85°C 10 TA = 25°C 1 1 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0 0 20 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.6 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 260°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG1016V Document number: DS31767 Rev. 3 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 8 www.diodes.com 10 100 1,000 May 2009 © Diodes Incorporated DMG1016V P-CHANNEL – Q2 1.0 1.0 VGS = -8.0V VGS = -4.5V VDS = -5V -ID, DRAIN CURRENT (A) VGS = -3.0V 0.6 VGS = -2.5V VGS = -2.0V 0.4 0.2 0.8 0.6 0.4 T A = 150°C 0.2 VGS = -1.5V TA = 125°C TA = 85°C T A = 25°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic 0 5 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 1.4 1.2 VGS = -1.8V 1.0 0.8 VGS = -2.5V 0.6 0.4 VGS = -4.5V 0.2 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage 1.0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) 1.7 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 0.8 1.5 1.3 1.1 0.9 VGS = -4.5V ID = -500mA VGS = -2.5V ID = -250mA 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 16 On-Resistance Variation with Temperature DMG1016V Document number: DS31767 Rev. 3 - 2 5 of 8 www.diodes.com TA = -55°C 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 13 Typical Transfer Characteristic 3.0 1.0 VGS = -4.5V 0.8 TA = 150°C TA = 125°C 0.6 T A = 85°C TA = 25°C 0.4 TA = -55°C 0.2 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature 1.0 1.0 0.8 VGS = -2.5V ID = -250mA 0.6 VGS = -4.5V ID = -500mA 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 17 On-Resistance Variation with Temperature May 2009 © Diodes Incorporated DMG1016V P-CHANNEL – Q2 (continued) 1.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 ID = -1mA 0.8 ID = -250µA 0.4 0.8 TA = 25°C 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature 0 0.2 100 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current 1,000 T A = 150°C -IDSS, LEAKAGE CURRENT (nA) Ciss C, CAPACITANCE (pF) Coss 10 Crss TA = 125°C 100 10 TA = 85°C T A = 25°C 1 1 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Total Capacitance 0 20 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Leakage Current vs. Drain-Source Voltage 20 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.6 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA R θJA = 260°C/W D = 0.02 P(pk) 0.01 D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG1016V Document number: DS31767 Rev. 3 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 22 Transient Thermal Response 6 of 8 www.diodes.com 10 100 1,000 May 2009 © Diodes Incorporated DMG1016V Ordering Information (Note 5) Part Number DMG1016V-7 NEW PRODUCT Notes: Case SOT-563 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information CA1 Date Code Key Year Code Month Code 2009 W YM 2010 X Jan 1 Feb 2 CA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Mar 3 Apr 4 2012 Z May 5 Jun 6 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D Package Outline Dimensions A B SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMG1016V Document number: DS31767 Rev. 3 - 2 7 of 8 www.diodes.com May 2009 © Diodes Incorporated DMG1016V IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com DMG1016V Document number: DS31767 Rev. 3 - 2 8 of 8 www.diodes.com May 2009 © Diodes Incorporated