DMN2004TK NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability Case: SOT-523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approximate) • • • • Drain D SOT-523 Gate Gate Protection Diode Top View ESD PROTECTED TO 2kV S G Source Top View Equivalent Circuit Ordering Information (Note 3) Part Number DMN2004TK-7 Notes: Case SOT-523 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information NAB Date Code Key Year Code Month Code 2006 T Jan 1 2007 U Feb 2 DMN2004TK Document number: DS30936 Rev. 5 - 2 Mar 3 NAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) YM 2008 V Apr 4 May 5 2009 W Jun 6 1 of 6 www.diodes.com 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D November 2010 © Diodes Incorporated DMN2004TK Maximum Ratings @TA = 25°C unless otherwise specified NEW PRODUCT Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) Steady State Value 20 ±8 Units V V ID 540 390 mA IDM 1.5 A Value 150 833 -55 to +150 Units mW °C/W °C TA = 25°C TA = 85°C Pulsed Drain Current (Note 5) Thermal Characteristics Symbol VDSS VGSS @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS ⎯ 0.8 0.9 ⎯ 300 ⎯ ±1 V nA nA μA VGS = 0V, ID = 10μA VDS = 16V, VGS = 0V VDS = 20V, VGS = 0V VGS = ±4.5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Zero Gate Voltage Drain Current IDSS Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage IGSS 20 ⎯ ⎯ ⎯ VGS(th) 0.5 ⎯ 1.0 V 0.55 0.70 0.9 Ω ⎯ Test Condition Static Drain-Source On-Resistance RDS (ON) ⎯ 0.4 0.5 0.7 Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time |Yfs| VSD 200 0.5 ⎯ ⎯ ⎯ 1.4 ms V Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 25 20 pF pF pF VDS = 16V, VGS = 0V f = 1.0MHz td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ 8.5 9.1 51 28 ⎯ ⎯ ⎯ ⎯ ns ns ns ns VDD = 10V, RL = 47Ω, ID = 200mA, VGEN = 4.5V, RG = 10Ω Notes: 4. Device mounted on FR-4 PCB. 5. Pulse width ≤10μS, Duty Cycle ≤1% 6. Short duration pulse test used to minimize self-heating effect. DMN2004TK Document number: DS30936 Rev. 5 - 2 2 of 6 www.diodes.com November 2010 © Diodes Incorporated ID, DRAIN CURRENT (A) 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.5 0.1 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current TA = 125°C TA = 150°C TA = 85°C TA = -55° C T A = 25 °C T A = 0 °C TA = -25° C RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) (NORMALIZED) VGS = 5V Pulsed RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT DMN2004TK 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004TK Document number: DS30936 Rev. 5 - 2 3 of 6 www.diodes.com November 2010 © Diodes Incorporated RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) (NORMALIZED) Tj, JUNCTION TEMPERATURE (°C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature IDR, REVERSE DRAIN CURRENT (A) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage |Yfs|, FORWARD TRANSFER ADMITTANCE (S) NEW PRODUCT DMN2004TK 1,000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004TK Document number: DS30936 Rev. 5 - 2 4 of 6 www.diodes.com VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation November 2010 © Diodes Incorporated DMN2004TK NEW PRODUCT Package Outline Dimensions A B C G H K M N J D L SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout Y Z C X DMN2004TK Document number: DS30936 Rev. 5 - 2 Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E 5 of 6 www.diodes.com November 2010 © Diodes Incorporated DMN2004TK NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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