ZXMS6005SGQ ADVAN CE IN F O RM ATIO N Product Summary

ZXMS6005SGQ
ADVANCE INFORMATION
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary

Continuous Drain Source Voltage

On-State Resistance

Nominal Load Current (VIN = 5V)

Clamping Energy
Features and Benefits
VDS = 60V

Compact High Power Dissipation Package
200mΩ

Low Input Current
2A

Logic Level Input (3.3V and 5V)
480mJ

Short Circuit Protection with Auto Restart

Over Voltage Protection (Active Clamp)
Description

Thermal Shutdown with Auto Restart

Over-Current Protection
The ZXMS6005SGQ is a self protected low side MOSFET with logic

Input Protection (ESD)
level input. It integrates over-temperature; over-current, over-voltage

High Continuous Current Rating
(active clamp) and ESD protected logic level functionality. The

Lead-Free Finish; RoHS compliant (Note 1 & 2)
ZXMS6005SGQ is ideal as a general purpose switch driven from 3.3V

Halogen and Antimony Free. “Green” Device (Note 3)
or 5V microcontrollers in harsh environments where standard

Qualified to AEC-Q101 Standards for High Reliability
MOSFETs are not rugged enough.

PPAP Capable (Note 4)
Mechanical Data
Applications


Especially suited for loads with a high in-rush current such as
lamps and motors

All types of resistive, inductive and capacitive loads in switching

applications
μC compatible power switch for 12V DC applications.

Automotive rated

Replaces electromechanical relays and discrete circuits

Linear Mode capability - the current-limiting protection circuitry
Case: SOT-223

Case Material: Molded Plastic, “Green” Molding Compound

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish

Weight: 0.112 grams (approximate)
SOT-223
is designed to de-activate at low VDS to minimize on state power
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does
not compromise the product’s ability to self- protect at low VDS.
Top view
Pin Out
Top View
Ordering Information
Product
ZXMS6005SGQTA
Notes:
Marking
ZXMS6005S
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000 units
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMS
6005S
ZXMS6005S = Product type Marking Code
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005SGQ
Document number: DS32249 Rev. 1 - 2
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ZXMS6005SGQ
ADVANCE INFORMATION
Functional Block Diagram
Absolute Maximum Ratings (@Tamb = +25°C, unless otherwise stated.)
Characteristic
Symbol
Value
Units
VDS
60
V
VDS(SC)
24
V
Continuous Input Voltage
VIN
-0.5 to +6
V
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
IIN
No limit
│IIN │≤2
mA
Pulsed Drain Current @VIN = 3.3V
IDM
5
A
Pulsed Drain Current @VIN = 5V
IDM
6
A
IS
2.5
A
Pulsed Source Current (Body Diode)
ISM
10
A
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
EAS
480
mJ
Electrostatic Discharge (Human Body Model)
VESD
4000
V
Charged Device Model
VCDM
1000
V
Continuous Drain-Source Voltage
Drain-Source Voltage for Short Circuit Protection
Continuous Source Current (Body Diode) (Note 6)
Thermal Characteristics (@Tamb = +25°C, unless otherwise stated.)
Characteristic
Symbol
Value
Units
Power Dissipation at Tamb = +25°C (Note 6)
Linear Derating Factor
PD
1.0
8.0
W
mW/°C
Power Dissipation at Tamb = +25°C (Note 7)
Linear Derating Factor
PD
1.6
12.8
W
mW/°C
RθJA
125
°C/W
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
83
°C/W
Thermal Resistance, Junction to Case (Note 8)
RθJC
39
°C/W
TJ
-40 to +150
°C
TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 6)
Operating Temperature Range
Storage Temperature Range
Notes:
6. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
7. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
8. Thermal resistance between junction and the mounting surfaces of drain and source pins.
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005SGQ
Document number: DS32249 Rev. 1 - 2
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ZXMS6005SGQ
Recommended Operating Conditions
Characteristic
Symbol
Min
Max
Input Voltage Range
VIN
0
5.5
Unit
V
Ambient Temperature Range
TA
-40
+125
°C
High Level Input Voltage for MOSFET to be on
VIH
3
5.5
V
Low Level Input Voltage for MOSFET to be off
VIL
0
0.7
V
Peripheral Supply Voltage (voltage to which load is referred)
VP
0
24
V
Thermal Characteristics
(°C)
(°C/W)
ADVANCE INFORMATION
The ZXMS6005SGQ is optimized for use with μC operating from 3.3V and 5V supplies.
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005SGQ
Document number: DS32249 Rev. 1 - 2
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ZXMS6005SGQ
Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.)
ADVANCE INFORMATION
Characteristic
Symbol
Min
Typ
Max
Unit
VDS(AZ)
60
65
70
V
—
—
1
—
—
2
Test Condition
Static Characteristics
Drain-Source Clamp Voltage
Off State Drain Current
IDSS
Input Threshold Voltage
VIN(th)
Input Current
IIN
Input Current While Over Temperature Active
—
Static Drain-Source On-State Resistance
RDS(on)
Continuous Drain Current (Note 6)
ID
Continuous Drain Current (Note 7)
Current Limit (Note 9)
ID(LIM)
0.7
1
1.5
—
60
100
—
120
200
—
—
300
—
170
250
—
150
200
1.4
—
—
1.6
—
—
1.9
—
—
2.0
—
—
2.2
5
—
7
—
3.3
μA
V
μA
μA
mΩ
ID = 10mA
VDS = 12V, VIN = 0V
VDS = 36V, VIN = 0V
VDS = VGS, ID = 1mA
VIN = +3V
VIN = +5V
VIN = +5V
VIN = +3V, ID = 1A
VIN = +5V, ID = 1A
VIN = 3V; TA = +25°C
A
VIN = 5V; TA = +25°C
VIN = 3V; TA = +25°C
VIN = 5V; TA = +25°C
A
VIN = +3V
VIN = +5V
Dynamic Characteristics
td(on)
—
6
—
tr
—
14
—
td(off)
—
34
—
ff
—
19
—
Thermal Overload Trip Temperature (Note 10)
TJT
150
175
—
°C
—
Thermal Hysteresis (Note 10)
—
—
10
—
°C
—
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
μs
VDD = 12V, ID = 1A, VGS = 5V
Over-Temperature Protection
Notes:
9. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
10. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods..
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005SGQ
Document number: DS32249 Rev. 1 - 2
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ZXMS6005SGQ
4.5V
5V
8
7
4V
6
3.5V
3V
5
2.5V
4
3
2V
2
VIN
1
0
120
= 25°C
TAT=A 25°C
IIN Input Current (A)
ID Drain Current (A)
9
1.5V
0
1
2
3
4
5
6
7
8
80
60
40
20
0
1
2
3
4
5
VIN Input Voltage (V)
VDS Drain-Source Voltage (V)
Input Current vs Input Voltage
1.4
ID = 1A
0.4
= 150°C
TT
J=
J 150°C
0.2
TTJJ== 25°C
25°C
0.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VTH Threshold Voltage (V)
RDS(on) On-Resistance ()
100
0
9 10 11 12
Typical Output Characteristic
VIN = VDS
1.3
ID = 1mA
1.2
1.1
1.0
0.9
0.8
-75 -50 -25
0
25
50
75 100 125 150
TJ Junction Temperature (°C)
(°C)
VIN Input Voltage (V)
On-Resistance vs Input Voltage
Threshold Voltage vs Temperature
10
0.40
0.35
0.30
VIN = 3V
0.25
0.20
0.15
VIN = 5V
0.10
0.05
0.00
-75 -50 -25
0
25
50
75 100 125 150
IS Source Curent (A)
RDS(on) On-Resistance ()
ADVANCE INFORMATION
Typical Characteristics
TTJ==150°C
150°C
J
1
0.01
J
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
(°C)
TJ Junction Temperature (°C)
On-Resistance vs Temperature
T J=25°C
T = 25°C
0.1
Reverse Diode Characteristic
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005SGQ
Document number: DS32249 Rev. 1 - 2
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Drain-Source Voltage (V)
Drain-Source Voltage (V)
12
ID=1A
10
VDS
8
6
VIN
4
2
0
-50
0
50
100
150
200
250
300
12
ID=1A
VDS
10
8
6
4
VIN
2
0
-50
0
50
100
150
200
250
300
Time (s)
Time (s)
Switching Speed
Switching Speed
ID Drain Current (A)
ADVANCE INFORMATION
Typical Characteristics - Continued
VIN = 5V
8
VDS = 15V
RD = 0
6
4
2
0
-2
0
2
4
6
8
10
12
Time (ms)
Typical Short Circuit Protection
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005SGQ
Document number: DS32249 Rev. 1 - 2
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Package Outline Dimensions
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
Q
b1
C
Dim
E
A
A1
b
b1
C
D
E
E1
Gauge
Plane
0.25
Seating
Plane
e1
b
A1
1.55
0.010
0.60
2.90
0.20
6.45
3.45
1.65
0.15
0.80
3.10
0.30
6.55
3.55
Typ
1.60
0.05
0.70
3.00
0.25
6.50
3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
0°
-1
0°
e
7°
7°
A
L
SOT223
Min Max
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Dimensions
X1
X2
Y1
Y2
C1
C2
Y1
C1
Y2
X2
C2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005SGQ
Document number: DS32249 Rev. 1 - 2
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ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005SGQ
Document number: DS32249 Rev. 1 - 2
8 of 8
www.diodes.com
April 2014
© Diodes Incorporated