ZXMS6005SGQ ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Continuous Drain Source Voltage On-State Resistance Nominal Load Current (VIN = 5V) Clamping Energy Features and Benefits VDS = 60V Compact High Power Dissipation Package 200mΩ Low Input Current 2A Logic Level Input (3.3V and 5V) 480mJ Short Circuit Protection with Auto Restart Over Voltage Protection (Active Clamp) Description Thermal Shutdown with Auto Restart Over-Current Protection The ZXMS6005SGQ is a self protected low side MOSFET with logic Input Protection (ESD) level input. It integrates over-temperature; over-current, over-voltage High Continuous Current Rating (active clamp) and ESD protected logic level functionality. The Lead-Free Finish; RoHS compliant (Note 1 & 2) ZXMS6005SGQ is ideal as a general purpose switch driven from 3.3V Halogen and Antimony Free. “Green” Device (Note 3) or 5V microcontrollers in harsh environments where standard Qualified to AEC-Q101 Standards for High Reliability MOSFETs are not rugged enough. PPAP Capable (Note 4) Mechanical Data Applications Especially suited for loads with a high in-rush current such as lamps and motors All types of resistive, inductive and capacitive loads in switching applications μC compatible power switch for 12V DC applications. Automotive rated Replaces electromechanical relays and discrete circuits Linear Mode capability - the current-limiting protection circuitry Case: SOT-223 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.112 grams (approximate) SOT-223 is designed to de-activate at low VDS to minimize on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self- protect at low VDS. Top view Pin Out Top View Ordering Information Product ZXMS6005SGQTA Notes: Marking ZXMS6005S Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 units 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information ZXMS 6005S ZXMS6005S = Product type Marking Code IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6005SGQ Document number: DS32249 Rev. 1 - 2 1 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6005SGQ ADVANCE INFORMATION Functional Block Diagram Absolute Maximum Ratings (@Tamb = +25°C, unless otherwise stated.) Characteristic Symbol Value Units VDS 60 V VDS(SC) 24 V Continuous Input Voltage VIN -0.5 to +6 V Continuous Input Current @-0.2V ≤ VIN ≤ 6V Continuous Input Current @VIN < -0.2V or VIN > 6V IIN No limit │IIN │≤2 mA Pulsed Drain Current @VIN = 3.3V IDM 5 A Pulsed Drain Current @VIN = 5V IDM 6 A IS 2.5 A Pulsed Source Current (Body Diode) ISM 10 A Unclamped Single Pulse Inductive Energy, TJ = +25°C, ID = 0.5A, VDD = 24V EAS 480 mJ Electrostatic Discharge (Human Body Model) VESD 4000 V Charged Device Model VCDM 1000 V Continuous Drain-Source Voltage Drain-Source Voltage for Short Circuit Protection Continuous Source Current (Body Diode) (Note 6) Thermal Characteristics (@Tamb = +25°C, unless otherwise stated.) Characteristic Symbol Value Units Power Dissipation at Tamb = +25°C (Note 6) Linear Derating Factor PD 1.0 8.0 W mW/°C Power Dissipation at Tamb = +25°C (Note 7) Linear Derating Factor PD 1.6 12.8 W mW/°C RθJA 125 °C/W Thermal Resistance, Junction to Ambient (Note 7) RθJA 83 °C/W Thermal Resistance, Junction to Case (Note 8) RθJC 39 °C/W TJ -40 to +150 °C TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 6) Operating Temperature Range Storage Temperature Range Notes: 6. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 7. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 8. Thermal resistance between junction and the mounting surfaces of drain and source pins. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6005SGQ Document number: DS32249 Rev. 1 - 2 2 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6005SGQ Recommended Operating Conditions Characteristic Symbol Min Max Input Voltage Range VIN 0 5.5 Unit V Ambient Temperature Range TA -40 +125 °C High Level Input Voltage for MOSFET to be on VIH 3 5.5 V Low Level Input Voltage for MOSFET to be off VIL 0 0.7 V Peripheral Supply Voltage (voltage to which load is referred) VP 0 24 V Thermal Characteristics (°C) (°C/W) ADVANCE INFORMATION The ZXMS6005SGQ is optimized for use with μC operating from 3.3V and 5V supplies. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6005SGQ Document number: DS32249 Rev. 1 - 2 3 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6005SGQ Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.) ADVANCE INFORMATION Characteristic Symbol Min Typ Max Unit VDS(AZ) 60 65 70 V — — 1 — — 2 Test Condition Static Characteristics Drain-Source Clamp Voltage Off State Drain Current IDSS Input Threshold Voltage VIN(th) Input Current IIN Input Current While Over Temperature Active — Static Drain-Source On-State Resistance RDS(on) Continuous Drain Current (Note 6) ID Continuous Drain Current (Note 7) Current Limit (Note 9) ID(LIM) 0.7 1 1.5 — 60 100 — 120 200 — — 300 — 170 250 — 150 200 1.4 — — 1.6 — — 1.9 — — 2.0 — — 2.2 5 — 7 — 3.3 μA V μA μA mΩ ID = 10mA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 1A VIN = +5V, ID = 1A VIN = 3V; TA = +25°C A VIN = 5V; TA = +25°C VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C A VIN = +3V VIN = +5V Dynamic Characteristics td(on) — 6 — tr — 14 — td(off) — 34 — ff — 19 — Thermal Overload Trip Temperature (Note 10) TJT 150 175 — °C — Thermal Hysteresis (Note 10) — — 10 — °C — Turn On Delay Time Rise Time Turn Off Delay Time Fall Time μs VDD = 12V, ID = 1A, VGS = 5V Over-Temperature Protection Notes: 9. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 10. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods.. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6005SGQ Document number: DS32249 Rev. 1 - 2 4 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6005SGQ 4.5V 5V 8 7 4V 6 3.5V 3V 5 2.5V 4 3 2V 2 VIN 1 0 120 = 25°C TAT=A 25°C IIN Input Current (A) ID Drain Current (A) 9 1.5V 0 1 2 3 4 5 6 7 8 80 60 40 20 0 1 2 3 4 5 VIN Input Voltage (V) VDS Drain-Source Voltage (V) Input Current vs Input Voltage 1.4 ID = 1A 0.4 = 150°C TT J= J 150°C 0.2 TTJJ== 25°C 25°C 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTH Threshold Voltage (V) RDS(on) On-Resistance () 100 0 9 10 11 12 Typical Output Characteristic VIN = VDS 1.3 ID = 1mA 1.2 1.1 1.0 0.9 0.8 -75 -50 -25 0 25 50 75 100 125 150 TJ Junction Temperature (°C) (°C) VIN Input Voltage (V) On-Resistance vs Input Voltage Threshold Voltage vs Temperature 10 0.40 0.35 0.30 VIN = 3V 0.25 0.20 0.15 VIN = 5V 0.10 0.05 0.00 -75 -50 -25 0 25 50 75 100 125 150 IS Source Curent (A) RDS(on) On-Resistance () ADVANCE INFORMATION Typical Characteristics TTJ==150°C 150°C J 1 0.01 J 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) (°C) TJ Junction Temperature (°C) On-Resistance vs Temperature T J=25°C T = 25°C 0.1 Reverse Diode Characteristic IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6005SGQ Document number: DS32249 Rev. 1 - 2 5 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6005SGQ Drain-Source Voltage (V) Drain-Source Voltage (V) 12 ID=1A 10 VDS 8 6 VIN 4 2 0 -50 0 50 100 150 200 250 300 12 ID=1A VDS 10 8 6 4 VIN 2 0 -50 0 50 100 150 200 250 300 Time (s) Time (s) Switching Speed Switching Speed ID Drain Current (A) ADVANCE INFORMATION Typical Characteristics - Continued VIN = 5V 8 VDS = 15V RD = 0 6 4 2 0 -2 0 2 4 6 8 10 12 Time (ms) Typical Short Circuit Protection IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6005SGQ Document number: DS32249 Rev. 1 - 2 6 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6005SGQ Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D Q b1 C Dim E A A1 b b1 C D E E1 Gauge Plane 0.25 Seating Plane e1 b A1 1.55 0.010 0.60 2.90 0.20 6.45 3.45 1.65 0.15 0.80 3.10 0.30 6.55 3.55 Typ 1.60 0.05 0.70 3.00 0.25 6.50 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm 0° -1 0° e 7° 7° A L SOT223 Min Max Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions X1 X2 Y1 Y2 C1 C2 Y1 C1 Y2 X2 C2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6005SGQ Document number: DS32249 Rev. 1 - 2 7 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6005SGQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6005SGQ Document number: DS32249 Rev. 1 - 2 8 of 8 www.diodes.com April 2014 © Diodes Incorporated