A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • • Nominal load current (VIN = 5V) Clamping Energy 2.8A 480mJ Description and Applications The ZXMS6006SG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6006SG is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. • Lamp Driver • Motor Driver • Relay Driver • Solenoid Driver • • • • • • • • • • • • Compact high power dissipation package Low input current Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input Protection (ESD) High continuous current rating Green, RoHS Compliant (Note 1) Halogen and Antimony Free. (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • Case: SOT-223 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.112 grams (approximate) • • • SOT-223 D S IN D D IN S Device symbol Top View Top view Pin Out Ordering Information (Note 3) Product ZXMS6006SGTA Notes: Marking ZXMS6006S Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. Contain <900ppm bromine, chlorine (<1500ppm total) and <1000ppm antimony compounds. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information ZXMS 6006S ZXMS6006S = Product type Marking Code IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 1 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMS6006SG Functional Block Diagram IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 2 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMS6006SG Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Continuous Drain-Source Voltage Drain-Source Voltage for short circuit protection Continuous Input Voltage Continuous Input Current @-0.2V ≤ VIN ≤ 6V Continuous Input Current @VIN < -0.2V or VIN > 6V Pulsed Drain Current @VIN = 3.3V Pulsed Drain Current @VIN = 5V Continuous Source Current (Body Diode) (Note 4) Pulsed Source Current (Body Diode) Unclamped Single Pulse Inductive Energy, TJ = 25°C, ID = 0.5A, VDD = 24V Electrostatic Discharge (Human Body Model) Charged Device Model Symbol VDS VDS(SC) VIN Units V V V IDM IDM IS ISM Value 60 16 -0.5 ... +6 No limit │IIN │≤2 11 13 2 12 EAS 480 mJ VESD VCDM 4000 1000 V V Symbol Value 1.0 8.0 1.6 12.8 125 83 39 -40 to +150 -55 to +150 Units W mW/°C W mW/°C °C/W °C/W °C/W °C °C IIN mA A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation at TA = 25°C (Note 4) Linear Derating Factor Power Dissipation at TA = 25°C (Note 5) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 6) Operating Temperature Range Storage Temperature Range Notes: PD PD RθJA RθJA RθJC TJ TSTG 4. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 5. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 6. Thermal resistance between junction and the mounting surfaces of drain and source pins. IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 3 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated Recommended Operating Conditions The ZXMS6006SG is optimized for use with µC operating from 3.3V and 5V supplies. Characteristic Input voltage range Ambient temperature range High Level Input Voltage for MOSFET to be on Low Level Input Voltage for MOSFET to be off Peripheral Supply Voltage (voltage to which load is referred) Symbol VIN TA VIH VIL VP Min 0 -40 3 0 0 Max 5.5 125 5.5 0.7 16 Unit V °C V V V Max Power Dissipation (W) ID Drain Current (A) Thermal Characteristics Limited by Over-Current Protection Limited 10 by RDS(on) 1ms 1 DC 1s 100ms 100m Single Pulse 10ms Tamb=25°C 10m 15X15X1.6 mm Single 1oz FR4 Limit of s/c protection 1 10 1.6 1.4 50X50X1.6 mm Single 2oz FR4 1.2 1.0 0.8 0.6 0.4 15X15X1.6 mm Single 1oz FR4 0.2 0.0 0 25 VDS Drain-Source Voltage (V) 120 Maximum Power (W) 80 D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 D=0.1 0 100µ 1m 10m 100m 1 10 75 100 125 150 Derating Curve 15X15X1.6 mm Single 1oz FR4 T amb=25°C 100 50 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION ZXMS6006SG 100 1k 100 15X15X1.6 mm Single 1oz FR4 Single Pulse T amb=25°C 10 1 100µ Pulse Width (s) 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 4 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMS6006SG Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Static Characteristics Drain-Source Clamp Voltage Symbol Min Typ Max Unit VDS(AZ) 60 0.7 2.0 2.2 2.6 2.8 4 6 65 1 60 120 85 75 8 13 70 1 2 1.5 100 400 300 125 100 - V td(on) tr td(off) ff - 8.6 18 34 15 - μs TJT ff 150 - 175 10 - °C °C Off State Drain Current IDSS Input Threshold Voltage VIN(th) Input Current Input Current While Over Temperature Active Static Drain-Source On-State Resistance IIN RDS(on) Continuous Drain Current (Note 4) ID Continuous Drain Current (Note 5) Current Limit (Note 7) Dynamic Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Over-Temperature Protection Thermal Overload Trip Temperature (Note 8) Thermal Hysteresis (Note 8) Notes: ID(LIM) µA V μA μA mΩ A A Test Condition ID = 10mA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 1A VIN = +5V, ID = 1A VIN = 3V; TA = 25°C VIN = 5V; TA = 25°C VIN = 3V; TA = 25°C VIN = 5V; TA = 25°C VIN = +3V VIN = +5V VDD = 12V, ID = 1A, VGS = 5V - 7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 8. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods.. IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 5 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics VIN 14 120 8 5V 4.5V 4V 3.5V 3V3V 6 2.5V 12 10 4 2V 2 T A = 25°C IIN Input Current (μA) ID Drain Current (A) 16 0 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 3 4 5 Input Current vs Input Voltage 1.4 0.20 ID = 1A 0.15 T J = 150°C 0.10 0.05 T J = 25°C 0.00 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTH Threshold Voltage (V) RDS(on) On-Resistance (Ω) 2 VIN Input Voltage (V) VDS Drain-Source Voltage (V) Typical Output Characteristic ID = 1mA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ Junction Temperature (°C) On-Resistance vs Input Voltage Threshold Voltage vs Temperature 0.20 IS Source Curent (A) 10 0.15 VIN = 3V 0.10 VIN = 5V 0.05 0.00 VIN = VDS 1.3 VIN Input Voltage (V) RDS(on) On-Resistance (Ω) ADVANCE INFORMATION ZXMS6006SG -50 -25 0 25 50 75 100 125 150 TJ=150°C 1 TJ=25°C 0.1 0.01 0.4 On-Resistance vs Temperature 0.6 0.8 1.0 VSD Source-Drain Voltage (V) TJ Junction Temperature (°C) Reverse Diode Characteristic IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 6 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated Drain-Source Voltage (V) Drain-Source Voltage (V) Typical Characteristics - Continued 12 ID=1A 10 VDS 8 6 VIN 4 2 0 -50 0 50 100 150 200 250 300 12 ID=1A VDS 10 8 6 4 VIN 2 0 -50 0 50 100 150 200 250 300 Time (μs) Time (μs) Switching Speed Switching Speed 10 VIN = 5V ID Drain Current (A) ADVANCE INFORMATION ZXMS6006SG VDS = 15V 8 RD = 0Ω 6 4 2 0 0 5 10 Time (ms) Typical Short Circuit Protection IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 7 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION Package Outline Dimensions DIM A A1 b b2 C D Millimeters Min Max 1.80 0.02 0.10 0.66 0.84 2.90 3.10 0.23 0.33 6.30 6.70 Inches Min Max 0.071 0.0008 0.004 0.026 0.033 0.114 0.122 0.009 0.013 0.248 0.264 DIM e e1 E E1 L - Millimeters Min Max 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 - Inches Min Max 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches. Suggested Pad Layout 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.059 2.3 0.091 mm inches IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 8 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMS6006SG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 9 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com © Diodes Incorporated