Corel Ventura - SST211.CHP

FAST DMOS FET Switches
N-Channel Enhancement-Mode
LLC
SST211 / SST213 / SST215
FEATURES
• High Speed Switching. . . . . . . . . . . . . . . . . . . . td(ON) 1ns
• Low Capacitance . . . . . . . . . . . . . . . . . . . . . 2.4pF typical
ON Resistance . . . . . . . . . . . . . . . . . . . . 50Ω typycal
• Low
• High Gain
• Surface Mount Package
APPLICATIONS
DESCRIPTION
Designed for audio, video and high frequency applications,
the SST211 Series is a high speed, ultra low capacitance
SPST analog switch. Utilizing Calogic’s proprietary DMOS
processing the SST211 Series features an integrated zener
diode designed to protect the gate from electrical over stress.
ORDERING INFORMATION
• Ultra High Speed Analog Switching
and Hold
• Sample
• Multiplexers
• High Gain Amplifiers
PIN CONFIGURATION
Part
Package
SST211
SST213
SST215
XSST211
XSST213
XSST215
SOT-143 Surface Mount
SOT-143 Surface Mount
SOT-143 Surface Mount
Sorted Chips in Carriers
Sorted Chips in Carriers
Sorted Chips in Carriers
Temperature Range
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
SCHEMATIC DIAGRAM
DRAIN
(2)
3
BODY
(4)
2
GATE
(3)
4
CD1-1
1
SOURCE
(1)
PRODUCT MARKING
SST211
211
SST213
213
SST215
215
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS067 REV A
SST211 / SST213 / SST215
LLC
ABSOLUTE MAXIMUM RATINGS (Tc = +25oC unless otherwise noted)
Parameter
Breakdown Voltages
SST211
SST213
SST215
Unit
+30
+10
+30
+15
-15
+25
-0.3
+25
-30
+25
+10
+10
+15
+15
-15
+25
-0.3
+25
-15
+25
+20
+20
+25
+25
-25
+30
-0.3
+30
-25
+30
V
V
V
V
V
V
V
V
V
V
VDS
VSD
VDB
VSB
VGS
VGB
VGD
Tj Operating Junction Temperature Range . . -55 to +125oC
TS Storage Temperature Range . . . . . . . . . . . -55 to +150oC
ID Continous Drain Current . . . . . . . . . . . . . . . . . . . . . 50mA
PT Power Dissipation (at or below Tc = +25oC) . . . . 360mW
Linear Derating Factor3.6mW/ o
ELECTRICAL CHARACTERISTICS (Tc = +25oC unless otherwise noted)
SYMBOL
CHARACTERISTICS
SST211
SST213
SST215
MIN TYP MAX MIN TYP MAX MIN TYP MAX
UNIT
TEST CONDITIONS
STATIC
30
35
10
25
ID = 10µA, VGS = VBS = 0
BVDS
Drain-Source
Breakdown Voltage
BVSD
Source-Drain Breakdown Voltage 10
BVDB
Drain-Body
Breakdown Voltage
15
15
25
ID = 10nA, VGB = 0 Source
OPEN
BVSB
Source-Body
Breakdown Voltage
15
15
25
IS = 10µA, VGB = 0 Drain OPEN
ID(OFF)
Drain-Source
OFF Current
IS(OFF)
Source-Drain
OFF Current
IGBS
Gate-Body
Leakage Current
VGS(th)
Gate Threshold Voltage
rds(on)
Drain-Source 1
ON Resistance
10
25
20
10
ID = 10nA, VGS = VBS = -5V
25
20
IS = 10nA, VGD = VBD = -5V
V
0.2
0.6
10
0.2
10
0.6
10
VDS = 10V
10
0.2
10
0.6
10
10
0.1
2.0
VDS = 20V
VSD = 10V
10
10
0.5
nA
1.0
2.0
1.0
2.0
50
70
50
70
0.1
50
70
30
45
30
45
30
45
VSD = 20V
µA
V
ohms
VGB = 25V
VGB = 30V
VGS = VBS = -5V
VGD = VBD = -5V
VDB = VSB = 0
VDS = VGS, ID = 1µA, VSB = 0
VGS = 5V
VGS = 10V
ID = 1mA
VSB = 0
DYNAMIC
gfs
Common-Source 1
Foward Transcond.
10
12
10
12
10
12
C(gs + gd + gb)
Gate Node Capacitance
2.4
3.5
2.4
3.5
2.4
3.5
C(gd + db)
Drain Node Capacitance
1.3
1.5
1.3
1.5
1.3
1.5
C(gs + sb)
Source Node Capacitance
3.5
4.0
3.5
4.0
3.5
4.0
C(dg)
Reverse Transfer Capacitance
0.3
0.5
0.3
0.5
0.3
0.5
td(ON)
Turn ON Delay Time
0.7
1.0
0.7
1.0
0.7
1.0
tr
Rise Time
0.8
1.0
0.8
1.0
0.8
1.0
t(OFF)
Turn OFF Time
10
10
mS
VDS = 10V, ID = 20mA
f = 1KHz, VSB = 0
pF
VDS = 10V
VGS = VBS = -15V
f = 1MHz
ns
VDD = 5V, VG(ON) = 10V
RL = 680, RG = 51
10
NOTE 1: Pulse Test, 80 Sec, 1% Duty Cycle
Typical Performance Characteristics: See SD211-215 Series
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS067 REV A