High-Speed Analog N-Channel DMOS FETs Improved On -Resistance CORPORATION SD310 / SD312 / SD314 FEATURES • High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB • Low On Resistance . . . . . . . . . . . . . . . . . 15 Ohms @ 15V Feedthrough and Feedback Transients • Low • Low Capacitance: • • — Input (Gate) . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ. — Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ. — Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ. No Protection Diode from Gate to Substrate for very high impedance applications Maximum Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . ±40V APPLICATIONS DESCRIPTION The Calogic SD310 is a 30V analog switch driver without a built-in protection diode from gate to substrate for use with SD312 and SD314 DMOS analog switches. The SD312 is a high performance, high-speed, high-voltage, and low resistance analog switch capable of switching ±5V signals. The maximum threshold of 2V permits simple direct TTL an CMOS driving for small applications. The SD314 is DMOS analog switch capable of switching ±10V analog signals with all other parameters identical to those of SD312. All three devices are manufactured with an implanted high-speed, high-voltage, and low resistance double-diffused MOS (DMOS) process. SD310, SD312 and SD314 devices also have no built-in protection diode to enhance performance in high impedance circuits. The devices are available in 4-lead hermetic TO-72 package and in die form for hybrid applications. Custom devices based on SD310, SD312 and SD314 can also be ordered. SD310: Analog Switch Driver • • • • • • • • SD312 and SD314: Analog Switches High-Speed Digital Switches Multiplexers A to D Converters D to A Converters Choppers Sample & Hold ORDERING INFORMATION Part Package Temperature Range SD310DE SD312DE SD314DE XSD310 XSD312 XSD314 Hermetic TO-72 Package Hermetic TO-72 Package Hermetic TO-72 Package Sorted Chips in Carriers Sorted Chips in Carriers Sorted Chips in Carriers SCHEMATIC DIAGRAM (Top View) BODY AND CASE SOURCE DRAIN 1 4 2 3 TO-72 GATE C G Body is internally connected to the case CD10-2 D S -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC SD310 / SD312 / SD314 CORPORATION ABSOLUTE MAXIMUM RATINGS PARAMETER Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation at 25oC Case Temperature . . . 1.2W Storage Temperature Range . . . . . . . . . . . . . . -65o to +200oC Lead Temperature (1/16" from case for 10 sec.). . . . . . 300oC Operating Temperature Range . . . . . . . . . . . -55oC to +125oC VDS Drain-to-source +30 +10 +20 Vdc VSD Source-to-drain* +10 +10 +20 Vdc VDB Drain-to-body +30 +15 +25 Vdc VSB Source-to-body +15 +15 +25 Vdc VGS Gate-to-source ±40 ±40 ±40 Vdc VGB Gate-to-body ±40 ±40 ±40 Vdc VGD Gate-to-drain ±40 ±40 ±40 Vdc SD310 SD312 SD314 DC ELECTRICAL CHARACTERISTICS (TA = 25oC, unless other specified.) SYMBOL SD310 PARAMETER SD312 SD314 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX BREAKDOWN VOLTAGE BVDS Drain-to-source 30 35 10 25 VGS = VBS = 0V, ID = 10µA 10 25 20 25 VGS = VBS = -5V, IS = 10nA V BVSD Source-to drain 10 10 20 VGD = VBD = -5V, ID = 10nA BVDB Drain-to-body 15 15 25 VGB = 0V, source OPEN, ID = 10nA BVSB Source-to-body 15 15 25 VGB = 0V, drain OPEN, IS = 10µA LEAKAGE CURRENT IDS (OFF) 1 Drain-to-source 10 1 10 VGS = VBS = -5V, VDS = +10V 1 ISD (OFF) 1 Source-to-drain 10 1 nA 10 1 IGBS Gate VT Threshold voltage rDS (ON) Drain-to-source resistance 0.1 0.5 1.0 2.0 30 0.1 0.5 1.0 2.0 50 30 20 35 20 15 25 15 VGS = VBS = -5V, VDS = +20V 10 0.5 VGS = VBD = -5V, VSD = +10V 10 VGS = VBD = -5V, VSD = +20V 0.1 VDB = VSB = 0V, VGS = ±40V 1.0 2.0 50 30 50 35 20 35 V VDS = VGS = VT, I S = 1µA, VSB = 0V ID = 1.0mA, VSB = 0, VGS = +5V Ω ID = 1.0mA, VSB = 0, VGS = +10V ID = 1.0mA, VSB = 0, VGS = +15V 15 AC ELECTRICAL CHARACTERISTICS SYMBOL SD310 PARAMETER SD312 SD314 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX gfs Forward transconductance 15 20 15 20 15 20 mmhos VDS = 10V, VSB = 0V, I D = 20mA, f = 1kHz SMALL SIGNAL CAPACITANCES (See capacitance model) C(GS+GD+GB) Gate node 2.4 3.7 2.4 3.7 2.4 3.7 C(GD+DB) Drain node 1.3 1.7 1.3 1.7 1.3 1.7 C(GS+SB) Source node 3.5 4.5 3.5 4.5 3.5 4.5 CDG Reverse transfer 0.3 0.7 0.3 0.7 0.3 0.7 pF VDS = 10V, f = 1MHz VGS = VBS = -15V UNIT SD310 / SD312 / SD314 CORPORATION Package Dimensions TO-72 .195 .178 (4.95) (4.53) .230 .209 (5.84) (5.31) .210 .170 (5.33) (4.32) .030 (.76) 4 LEADS .500 (12.70) .021 .016 (.53) (.41) .046 .036 (1.16) (.91) .100 (2.54) 0.50 (1.27) 45 o BOTTOM VIEW .048 .028 (1.21) (.72) TO-72