MBRS140

www.eicsemi.com
MBRS140
SCHOTTKY BARRIER RECTIFIER
Schottky Power Rectifier
Surface Mount Power Package
SMB (DO-214AA)
Employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry
features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and
polarity protection diodes, in surface mount applications
where compact size and weight are critical to the
system.
4.65 ± 0.30
5.30 ± 0.22
1.14 ± 0.38
0.1 ± 0.1
0.22 ± 0.07
2.1 ± 0.15
2.28 ± 0.15
3.62 ± 0.32
FEATURES :
*
*
*
*
*
Very Low Forward Voltage Drop
Small Compact Surface Mountable Package
Highly Stable Oxide Passivated Junction
Guardring for Stress Protection
Pb / RoHS Free
Dimensions in millimeters
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMB Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.1079 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
VALUE
UNIT
Maximum Repetitive Reverse Voltage
VRRM
40
V
Maximum Working Peak Reverse Voltage
VRWM
40
V
Maximum DC Blocking Voltage
VDC
40
V
Maximum Average Rectified Forward Current (TL = 115°C)
IF(AV)
1.0
A
IFSM
40
A
VF
0.60
V
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase)
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 1.0 A, TJ = 25°C)
Maximum Instantaneous Reverse Current (Note1)
TJ = 25°C
TJ = 100°C
Thermal Resistance - Junction to Lead (TL = 25°C)
Operating Junction Temperature
1.0
mA
10
mA
RθJL
12
°C/W
TJ
- 65 to +125
°C
IR
Note: (1) Pulse Test : Pulse Width = 300μs Duty Cycle ≤ 2%
Page 1 of 2
Rev. 04 : September 28, 2012
www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( MBRS140 )
AVERAGE POWER DISSIPATION
(WATTS)
FIG.2 - POWER DISSIPATION
8
RATED VOLTAGE APPLIED
RθJC = 12ฐC/W, TJ = 125ฐC
6
4
DC
2
0
SQUARE WAVE
30
40
50
60
70
80
90
100 110 120 130 140
4
π
TJ = 125 °C
3
5
CAPACITIVE LOAD
10
2
IPK
IAV =
20
SQUARE
WAVE
DC
1
0
0
1
2
3
4
CASE TEMPERATURE, ( °C)
AVERAGE FORWARD CURRENT, (A)
FIG.3 - TYPICAL FORWARD VOLTAGE
FIG.4 - TYPICAL REVERSE CURRENT
2.0
1.0
TC = 100 °C
0.5
0.2
TC = 25 °C
0.1
100
REVERSE CURRENT, (mA)
INSTANTANEOUS FORWARD
CURRENT, (A)
AVERAGE FORWARD CURRENT,
(A)
FIG.1 - CURRENT DERATING (CASE)
0.05
0.03
TJ = 125 °C
= 100 °C
10
= 75 °C
1.0
= 25 °C
0.1
0.01 0
0.02
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
4
8
12
16
20
24
28
32
36
40
0.8
REVERSE VOLTAGE, (V)
INSTANTANEOUS FORWARD
VOLTAGE, (V)
FIG. 5 TYPICAL CAPACITANCE
200
CAPACITANCE , (pF)
180
NOTE :TYPICAL CAPACITANCE
AT 0 V = 160 pF
160
140
120
100
80
60
40
20
00
4
8
12
16
20
24
28
32
36
40
REVERSE VOLTAGE, (V)
Page 2 of 2
Rev. 04 : September 28, 2012