ll4148 : high speed switching diode

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LL4148
HIGH SPEED SWITCHING DIODE
MiniMELF (SOD-80C)
Cathode Mark
FEATURES :
*
*
*
*
*
*
φ 0.063 (1.64)
Silicon Epitaxial Planar Diode
High reliability
Low reverse current
Low forward voltage drop
High speed switching
Pb / RoHS Free
0.055 (1.40)
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
Mounting Pad Layout
0.098 (2.50)
Max.
0.049 (1.25)Min.
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Unit
Maximum Peak Reverse Voltage
VRM
100
V
Maximum Reverse Voltage
VR
75
V
IF
200
mA
IF(AV)
150
mA
IFSM
500
mA
PD
500
mW
RӨJtp
300
°C/W
Maximum Junction Temperature
TJ
175
°C
Storage Temperature Range
TS
-65 to + 175
°C
Maximum Continuous Current
(1)
Maximum Average Forward Current
Half Wave Rectification with Resistive Load, f ≥ 50Hz (1)
Maximum Surge Forward Current at t < 1s and Tj = 25°C
Maximum Power Dissipation
(1)
Thermal Resistance Junction to tie-point
Note: (1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Parameter
(TJ = 25°C unless otherwise noted)
Symbol
Reverse Current
IR
Forward Voltage
Diode Capacitance
VF
Cd
Reverse Recovery Time
Trr
Page 1 of 2
Test Condition
Min.
Typ.
Max.
Unit
VR = 20 V
VR = 75 V
VR = 20 V , Tj = 150 °C
IF = 10 mA
f = 1MHz ; VR = 0
IF = 10 mA , I R = 1mA,
VR = 6 V, RL = 100Ω
-
-
25
5
50
1
4
nA
-
-
4
ns
μA
μA
V
pF
Rev. 02 : March 25, 2005
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RATING AND CHARACTERISTIC CURVES ( LL4148 )
FIG. 1 ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG. 2 TYPICAL FORWARD VOLTAGE
1000
Forward Current , IF (mA)
POWER DISSIPATION , P D (mW)
800
600
400
200
0
100
10
1
TJ = 25°C
0.1
0.01
0
100
200
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward Voltage , VF (V)
Ambient Temperature , Ta (°C)
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
FIG. 4 TYPICAL REVERSE CURRENT
VERSUS JUNCTION TEMPERATURE
104
1.2
Reverse Current , IR (nA)
Diode Capacitance , Cd (pF)
1.0
0.9
0.8
0.7
f = 1MHz;
TJ = 25°C
0.6
103
102
10
0.5
0.4
1
0
5
Reverse Voltage , VR (V)
Page 2 of 2
10
0
100
200
Junction Temperature, Tj (°C)
Rev. 02 : March 25, 2005