www.eicsemi.com LL4148 HIGH SPEED SWITCHING DIODE MiniMELF (SOD-80C) Cathode Mark FEATURES : * * * * * * φ 0.063 (1.64) Silicon Epitaxial Planar Diode High reliability Low reverse current Low forward voltage drop High speed switching Pb / RoHS Free 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g 0.079 (2.00)Min. 0.197 (5.00) REF Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 100 V Maximum Reverse Voltage VR 75 V IF 200 mA IF(AV) 150 mA IFSM 500 mA PD 500 mW RӨJtp 300 °C/W Maximum Junction Temperature TJ 175 °C Storage Temperature Range TS -65 to + 175 °C Maximum Continuous Current (1) Maximum Average Forward Current Half Wave Rectification with Resistive Load, f ≥ 50Hz (1) Maximum Surge Forward Current at t < 1s and Tj = 25°C Maximum Power Dissipation (1) Thermal Resistance Junction to tie-point Note: (1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Parameter (TJ = 25°C unless otherwise noted) Symbol Reverse Current IR Forward Voltage Diode Capacitance VF Cd Reverse Recovery Time Trr Page 1 of 2 Test Condition Min. Typ. Max. Unit VR = 20 V VR = 75 V VR = 20 V , Tj = 150 °C IF = 10 mA f = 1MHz ; VR = 0 IF = 10 mA , I R = 1mA, VR = 6 V, RL = 100Ω - - 25 5 50 1 4 nA - - 4 ns μA μA V pF Rev. 02 : March 25, 2005 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( LL4148 ) FIG. 1 ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE 1000 Forward Current , IF (mA) POWER DISSIPATION , P D (mW) 800 600 400 200 0 100 10 1 TJ = 25°C 0.1 0.01 0 100 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Forward Voltage , VF (V) Ambient Temperature , Ta (°C) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERSE CURRENT VERSUS JUNCTION TEMPERATURE 104 1.2 Reverse Current , IR (nA) Diode Capacitance , Cd (pF) 1.0 0.9 0.8 0.7 f = 1MHz; TJ = 25°C 0.6 103 102 10 0.5 0.4 1 0 5 Reverse Voltage , VR (V) Page 2 of 2 10 0 100 200 Junction Temperature, Tj (°C) Rev. 02 : March 25, 2005