Certificate TH97/10561QM 1N4148WS Certificate TW00/17276EM SMALL SIGNAL FAST SWITCHING DIODE SOD-323 PRV : 100 Volts IO : 150 mA 1.35 1.15 0.40 0.25 1.80 1.60 FEATURES : 1.10 0.80 0.15 (max) * Silicon Epitaxial Planar Diode * Fast switching diodes. * Pb / RoHS Free MECHANICAL DATA : * Case : SOD-323 plastic Case * Weight : approx. 0.004 g * Marking Code : " W2" 2.80 2.30 Dimensions in millimeters MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Parameter Reverse Voltage Peak Reverse Voltage Average Rectified Current Half Wave Rectification with Resistive Load at f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at T amb = 25 °C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Rating at Ta = Unit 75 100 V V 150 1) mA 350 IFSM Ptot RthJA Tj TSTG mA mW °C/W °C °C 1) 200 650 1) 150 -65 to + 150 25 °C unless otherwise specified) Test Conditions Forward Voltage Leakage Current IF = 10 mA VR = 20 V VR = 75 V VR = 20 V, Tj =150 °C VF = V R = 0 V tp = 0.1µs, Rise Time < 30ns, fp = 5 to 100 kHz IF = 10 mA, I R = 1 mA, VR = 6 V, RL = 100 Ω f = 100 MHz, VRF = 2 V Rectification Efficiency Value VR VRM IF(AV) Parameter Capacitance Voltage Rise when Switching On (tested with 50 mA pulses) Reverse Recovery Time Symbol Symbol Min. Typ. Max. Unit VF IR IR IR Ctot - - 1.0 25 5.0 50 4 V nA µA µA pF Vfr - - 2.5 V Trr - - 4 ns ηv 0.45 - - - Note : (1) Valid provided that electrodes are kept at ambient temperature. Page 1 of 3 Rev. 06 : May 22, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATINGS AND CHARACTERISTIC CURVES (1N4148WS) Forward charecteristics Dynamic forward resistance versus forward current mA V 103 104 5 T j = 25 °C f = 1 kHz 2 102 T j = 100 °C 103 5 T j = 25 °C iF rF 10 2 102 5 1 2 10 -1 10 5 2 10-2 0 1 2V 1 10-2 10-1 10 1 VF 102 mA IF Admissible power dissipation versus ambient temperture Relative capacitance versus reverse voltage For conditions, see footnote in table "Absolute Maximum Ratings" mW 1000 900 C tot (V R ) 1.1 C tot (0 V) 800 P tot 700 T j = 25 °C f = 1 kHz 1.0 600 500 0.9 1N4148 400 300 0.8 200 1N4148W 0.7 100 0 0 Page 2 of 3 100 T amb 200 °C 0 2 4 6 VR 8 10 V Rev. 06 : May 22, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATINGS AND CHARACTERISTIC CURVES (1N4148WS) Leakage Current versus junction temperature nA 104 5 2 103 IR 5 2 102 5 2 VR = 20 V 10 5 2 1 0 200 °C 100 Tj Admissible repetitive peak forward current versus pulse duration For conditions, see footnote in table " Absolute Maximum Ratings " A 100 I ν= t p /T 5 4 T= 1/f p 3 I FRM 2 tp 10 n= 0 I FRM t T 5 4 3 0.1 2 0.2 1 0.5 5 4 3 2 0.1 10-5 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 s tp Page 3 of 3 Rev. 06 : May 22, 2006