BAS16WS SMALL SIGNAL DIODE PRV : 100 Volts Io : 250 mA 1.35 1.15 1.10 0.80 0.40 1.80 1.60 0.25 SOD-323 FEATURES : * Pb / RoHS Free 0.15 (max) * Silicon Epitaxial Planar Diode * Fast switching diodes. MECHANICAL DATA : 2.80 * Case : SOD-323 plastic Case * Weight : approx. 0.004 g 2.30 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified . Parameter Symbol Value Unit VR 75 V Peak Reverse Voltage VRM 100 V Rectified Current (Continuous) IF(AV) 250 mA Surge Forward Current at t = 1 s and Tj = 25 °C IFSM 500 mA Reverse Voltage Power Dissipation at T amb = 25 °C Ptot Junction Temperature Tj Storage Temperature Range TS ELECTRICAL CHARACTERISTICS (Rating at Tj = Parameter 1) mW 200 150 °C °C -65 to + 150 25 °C unless otherwise specified) Symbol Min. Typ. Max. Unit Forward Voltage at I F = 50 mA VF - - 1 V Leakage Current at VR=25 V, Tj=150°C IR - - 30 nA at VR = 75 V IR - - 1 μA at VR=75 V, Tj=150°C IR - - 50 μA Ctot - - 4 pF Trr - - 6 ns RthJA - - 650 1) °C/W Capacitance at VF = VR = 0 V Reverse Recovery Time from I F = 10 mA to I R = 10 mA, I R = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Note : 1) Valid provided that electrodes are kept at ambient temperature Page 1 of 2 Rev. 04 : December 21, 2005 RATINGS AND CHARACTERISTIC CURVES ( BAS16WS) Forward charecteristics Dynamic forward resistance versus forward current mA V 103 104 5 T j = 25 °C f = 1 kHz 2 2 10 T j = 100 °C 103 T j = 25 °C iF 5 rF 10 2 102 5 1 2 10 10-1 5 2 -2 10 0 1 2V 1 10-2 10-1 VF 102 10 1 mA IF Admissible power dissipation versus ambient temperture Relative capacitance versus reverse voltage For conditions, see footnote in table "Absolute Maximum Ratings" mW 500 C tot (V R ) 1.1 C tot (0 V) 400 P tot T j = 25 °C f = 1 kHz 1.0 300 0.9 200 0.8 100 0.7 0 0 Page 2 of 2 100 T amb 200 °C 0 2 4 6 VR 8 10 V Rev. 04 : December 21, 2005