SYNSEMI BAS16WS

BAS16WS
SMALL SIGNAL DIODE
PRV : 100 Volts
Io : 250 mA
1.35
1.15
1.10
0.80
0.40
1.80
1.60
0.25
SOD-323
FEATURES :
* Pb / RoHS Free
0.15 (max)
* Silicon Epitaxial Planar Diode
* Fast switching diodes.
MECHANICAL DATA :
2.80
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
2.30
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
.
Parameter
Symbol
Value
Unit
VR
75
V
Peak Reverse Voltage
VRM
100
V
Rectified Current (Continuous)
IF(AV)
250
mA
Surge Forward Current at t = 1 s and Tj = 25 °C
IFSM
500
mA
Reverse Voltage
Power Dissipation at T amb = 25 °C
Ptot
Junction Temperature
Tj
Storage Temperature Range
TS
ELECTRICAL CHARACTERISTICS (Rating at Tj =
Parameter
1)
mW
200
150
°C
°C
-65 to + 150
25 °C unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage at I F = 50 mA
VF
-
-
1
V
Leakage Current
at VR=25 V, Tj=150°C
IR
-
-
30
nA
at VR = 75 V
IR
-
-
1
μA
at VR=75 V, Tj=150°C
IR
-
-
50
μA
Ctot
-
-
4
pF
Trr
-
-
6
ns
RthJA
-
-
650 1)
°C/W
Capacitance at VF = VR = 0 V
Reverse Recovery Time
from I F = 10 mA to I R = 10 mA,
I R = 6 V, RL = 100 Ω
Thermal Resistance Junction to Ambient Air
Note : 1) Valid provided that electrodes are kept at ambient temperature
Page 1 of 2
Rev. 04 : December 21, 2005
RATINGS AND CHARACTERISTIC CURVES ( BAS16WS)
Forward charecteristics
Dynamic forward resistance
versus forward current
mA
V
103
104
5
T j = 25 °C
f = 1 kHz
2
2
10
T j = 100 °C
103
T j = 25 °C
iF
5
rF
10
2
102
5
1
2
10
10-1
5
2
-2
10
0
1
2V
1
10-2
10-1
VF
102
10
1
mA
IF
Admissible power dissipation
versus ambient temperture
Relative capacitance
versus reverse voltage
For conditions, see footnote in table
"Absolute Maximum Ratings"
mW
500
C tot (V R ) 1.1
C tot (0 V)
400
P tot
T j = 25 °C
f = 1 kHz
1.0
300
0.9
200
0.8
100
0.7
0
0
Page 2 of 2
100
T amb
200 °C
0
2
4
6
VR
8
10 V
Rev. 04 : December 21, 2005