SMALL SIGNAL SWITCHING DIODES 1N4148 DO34 Features · Silicon epitaxial planar diode DO-34(GLASS) · Fast switching diodes · 500mW power dissipation 0.79(2.0) MAX. DIA. · This diode is also available in the Mini-MELF case with the type designation LL4148 1.02(26.0) MIN. 0.106(2.9) MAX. Mechanical Data 1.02(26.0) MIN. 0.017(0.42) MAX. DIA. · Case: DO-35 glass case · Polarity: Color band denotes cathode end · Weight: Approx. 0.13 gram Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified) Symbol VR VRM Reverse Voltage Peak Reverse Voltage Average rectified current, Half wave rectification with Resistive load at TA=25℃ and F≥50Hz IAV Surge forward current at t<1S and TJ=25℃ Power dissipation at TA=25℃ Junction temperature Value Units 75 Volts 100 Volts 1501) mA IFSM Ptot 500 mA 5001) mW TJ 175 ℃ Storage temperature range TSTG 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) -65 to +175 ℃ Electrical characteristics (Ratings at 25℃ ambient temperature unless otherwise specified) Forward voltage Leakage current at VR=20V at VR=75V at VR=20V, TJ=150℃ Junction Capacitance at VR=VF=0V Symbols VF IR IR IR CJ Min. Typ. Max. Units 1 25 5 50 Volts nA μA μA 4 pF Voltage rise when switching ON tested with 50mA pulse tp=0.1μS, Rise time<30μS, fp=5 to 100KHz Vfr 2.5 Volts Reverse Recovery time from IF=10mA to IR=1mA, VR=6V, RL=100Ω trr 4 ns RθJA 3501) K/W Thermal resistance, junction to Ambient Rectification efficiency at f=100MHz, VRF=2V η 0.45 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) RATINGS AND CHARACTERISTIC CURVES 1N4148 FIG.2-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG.1-FORWARD CHARACTERISTICS Ω mA 104 103 TJ= 25℃ f=1KHz 102 103 rF TJ=25℃ TJ=100℃ IF 10 102 1 10 10-1 10-2 1 0 1 2V 10-2 10-1 1 VF 102 10 mA IF FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE mW 1000 900 1.1 TJ= 25℃ f=1MHz 800 700 Ptot Ctot(VR) Ctot(OV) 600 500 1.0 0.9 400 300 0.8 200 100 0.7 0 0 200 ℃ 100 TA 0 2 4 6 8 VR 10V RATINGS AND CHARACTERISTIC CURVES 1N4148 FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 104 103 D.U.T. 60 Ω 2nF VRF=2V 5KΩ VO 102 10 VR= 20V 1 0 200 ℃ 100 FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T IFRM IFRM tp 10 T=1/fp n=0 T 0.1 0.2 1 0.5 0.1 10-5 10-4 10-3 10-2 10-1 tp 1 10S