www.eicsemi.com FBR600 - FBR610 FAST RECOVERY BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes BR6 0.445 (11.30) 0.405 (10.30) FEATURES : * * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board φ0.158 (4.00) AC + 0.142 (3.60) 0.62 (15.75) 0.58 (14.73) 0.127 (3.20) 0.047 (1.20) AC * Pb / RoHS Free 0.042 (1.06) 0.038 (0.96) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.6 grams 0.75 (19.1) Min. 0.27 (6.90) 0.23 (5.80) Dimension in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Recurrent Peak Reverse Voltage VRRM FBR 600 50 Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc = 50 °C IF(AV) 6.0 A IFSM 150 A 2 64 RATING SYMBOL Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at IF = 3.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Maximum Reverse Recovery Time (Note 1) FBR 601 100 FBR 602 200 FBR 604 400 FBR 606 600 FBR 608 800 FBR 610 1000 UNIT V 2 It VF 1.3 AS V IR 10 µA IR(H) Trr 1.0 150 mA 250 500 ns RθJC TJ 8 °C/W Operating Junction Temperature Range - 50 to + 150 °C Storage Temperature Range TSTG - 50 to + 150 °C Typical Thermal Resistance per diode (Note 2) Notes : 1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal resistance from Junction to Case with units mounted on a 6" x 5.5" x0.11" ( 15 x 14 x 0.3 cm ) Al. plate. Page 1 of 2 Rev. 02 : March 24, 2005 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( FBR600 - FBR610 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Trr 10 Ω + 0.5 + D.U.T. 0 PULSE GENERATOR ( NOTE 2 ) 50 Vdc (approx) 1Ω - 0.25 OSCILLOSCOPE ( NOTE 1 ) - 1.0 A SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 1 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 6.0 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 4.8 3.6 2.4 1.2 Tc = 55 °C 120 90 60 30 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 0 25 50 75 100 125 150 175 1 CASE TEMPERATURE, ( °C) 2 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 6 10 20 40 60 100 FIG.5 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 100 10 Pulse W idth = 300 µs 2% Duty Cycle TJ = 100 °C REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES 4 NUMBER OF CYCLES AT 60Hz TJ = 25 °C 10 1.0 0.1 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005