FBR600 - FBR610

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FBR600 - FBR610
FAST RECOVERY
BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
BR6
0.445 (11.30)
0.405 (10.30)
FEATURES :
*
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Ideal for printed circuit board
φ0.158 (4.00)
AC
+
0.142 (3.60)
0.62 (15.75)
0.58 (14.73)
0.127 (3.20)
0.047 (1.20)
AC
* Pb / RoHS Free
0.042 (1.06)
0.038 (0.96)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.6 grams
0.75 (19.1)
Min.
0.27 (6.90)
0.23 (5.80)
Dimension in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
VRRM
FBR
600
50
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Current Tc = 50 °C
IF(AV)
6.0
A
IFSM
150
A
2
64
RATING
SYMBOL
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 3.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
FBR
601
100
FBR
602
200
FBR
604
400
FBR
606
600
FBR
608
800
FBR
610
1000
UNIT
V
2
It
VF
1.3
AS
V
IR
10
µA
IR(H)
Trr
1.0
150
mA
250
500
ns
RθJC
TJ
8
°C/W
Operating Junction Temperature Range
- 50 to + 150
°C
Storage Temperature Range
TSTG
- 50 to + 150
°C
Typical Thermal Resistance per diode (Note 2)
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to Case with units mounted on a 6" x 5.5" x0.11" ( 15 x 14 x 0.3 cm ) Al. plate.
Page 1 of 2
Rev. 02 : March 24, 2005
www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( FBR600 - FBR610 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5
+
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
6.0
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
4.8
3.6
2.4
1.2
Tc = 55 °C
120
90
60
30
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
0
25
50
75
100
125
150
175
1
CASE TEMPERATURE, ( °C)
2
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
6
10
20
40
60
100
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
100
10
Pulse W idth = 300 µs
2% Duty Cycle
TJ = 100 °C
REVERSE CURRENT,
MICROAMPERES
FORWARD CURRENT, AMPERES
4
NUMBER OF CYCLES AT 60Hz
TJ = 25 °C
10
1.0
0.1
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005