FBR800 - FBR810 FAST RECOVERY BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 8.0 Amperes BR10 φ 0.158 (4.00) FEATURES : * * * * * * * 0.520 (13.20) 0.480 (12.20) High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board AC 0.142 (3.60) 0.77 (19.56) 0.73 (18.54) 0.290 (7.36) 0.210 (5.33) AC 0.052 (1.32) 0.048 (1.22) 0.75 (19.1) Min. MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.1 grams 0.30 (7.62) 0.25 (6.35) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL FBR FBR FBR FBR FBR FBR FBR UNITS 800 801 802 804 806 808 810 Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Maximum Average Forward Current Tc = 50 °C IF(AV) 8.0 Amps. IFSM 200 Amps. 2 It VF 160 IR 10 A S Volts µA Volts Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at IF = 4.0 Amps. Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance per diode (Note 2) Operating Junction Temperature Range Storage Temperature Range 1.3 I R(H) Trr 2 µA 200 150 250 500 ns RθJC 2.5 TJ - 50 to + 150 °C/W °C T STG - 50 to + 150 °C Notes : 1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink. UPDATE : APRIL 21, 1998 RATING AND CHARACTERISTIC CURVES ( FBR800 - FBR810 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Trr 10 Ω + 0.5 A D.U.T. + 0 PULSE GENERATOR ( NOTE 2 ) 50 Vdc (approx) 1Ω - 0.25 OSCILLOSCOPE ( NOTE 1 ) - 1.0 A SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 1 cm 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 10 8 6 4 2 Tc = 55 °C 160 120 80 40 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 0 175 1 CASE TEMPERATURE, ( °C) 2 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 6 10 20 40 60 REVERSE CURRENT, MICROAMPERES PER DIODE 100 Pulse Width = 300 µs 2% Duty Cycle TJ = 25 °C 10 1.0 0.1 10 TJ = 100 °C 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 100 FIG.5 - TYPICAL REVERSE CHARACTERISTICS PER DIODE FORWARD CURRENT, AMPERES 4 NUMBER OF CYCLES AT 60Hz 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, VOLTS 1.8 2.0 140