GBU10005 THRU GBU1010 GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 10.0 Ampere FEATURES GBU Glass passivated chip junction Reliable low cost construction utilizing molded plastic technique ● Ideal for printed circuit board ● Low reverse leakage current ● Low forward voltage drop ● High surge current capabiliy ● ● MECHANICAL DATA ● ● ● ● Case:Molded plastic, GBU Terminals : Terminals: Leads solderable per MIL-STD-202 method 208 guaranteed Epoxy: UL 94V-0 rate flame retardant Mounting Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Symbols GBU 10005 GBU 1001 GBU 1002 GBU 1004 GBU 1006 GBU 1008 GBU Units 1010 Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current with Heatsink at TC = 100 OC I(AV) 10.0 A Peak Forward Surge Current, 8.3 ms Single Half-Sine -Wave superimposed on rated load (JEDEC Method) IFSM 250 A Maximum Forward Voltage at 5.0 A DC and 25 OC VF 1.0 V Maximum Reverse Current at TA = 25 C at Rated DC Blocking Voltage TA = 125 OC IR 5.0 500 µA CJ 70 RθJC 2.2 TJ,TS -55 to +150 Parameter O Typical Junction Capacitance Typical Thermal Resistance 1) 2) Operating and Storage Temperature Range 1) 2) Measured at 1 MHz and applied reverse voltage of 4 VDC. Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate heatsink. pF C/W O C O GBU10005 THRU GBU1010 10 Resistive or Inductive Load 8 6 4 2 0 0 50 100 IF, INS TANTANE OUS FOR WAR D CUR R E NT (A) I(AV ), AV G FOR WAR D R E CTIFIE D CUR R E NT (A) RATINGS AND CHARACTERISTIC CURVES 100 Tj = 25° C 10 1.0 0.1 0 150 0.6 1.0 1.4 1.8 V F, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, per element 250 1000 Tj = 25° C f = 1.0MHz 200 CT, TOTAL CAPACITANCE (pF) IFSM, PE AK FOR WAR D S UR GE CUR R E NT (A) TC, CASE TEMPERATURE ( °C) Fig. 1 Forward Current Derating Curve 0.2 Single Half-Sine Wave (JEDEC Method) 150 100 50 Tj = 25° C 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current 100 10 0.1 1.0 10 100 V R, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance, per element