2N7002

2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Voltage - 60 Volts
Drain Curreent - 115 mAmps
FEATURES
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●
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SOT-23
Low On-Resistance: R DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected :1000V
A
D
TOP VIEW
G
E
MECHANICAL DATA
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B
S
D
G
H
Case: SOT-23, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Marking: Device Code
Weight: 0.008 grams (approx.)
J
L
Min
Max
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Symbol
Value
Unit
Drain–Source Voltage
V DSS
60
V dc
Drain–Gate Voltage (R GS = 1.0 MΩ)
V DGR
60
V dc
ID
ID
± 115
± 75
± 800
mAdc
Drain Current
– Continuous TC = 25°C (Note 1.)
– ContinuousTC = 100°C (Note 1.)
– Pulsed (Note 2.)
M
K
● MAXIMUM RATING (Ta = 25 ℃)
Rating
C
Dim
A
IDM
Simplified Schematic
N - Channel
3
Drain
Gate
1
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
V GS
V GSM
± 20
± 40
Vdc
Vpk
2
Source
●THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1.
2.
3.
4.
(Top View)
Symbol
Max
Unit
PD
225
1.8
mW
mW/°C
R θJA
556
°C/W
PD
300
mW
mW/°C
2.4
RθJA
417
°C/W
TJ, Tstg
-55 to
+150
°C
The Power Dissipation of the package may result in a lower continuous drain current.
Pulse Test: Pulse Width≤ 300 µs, Duty Cycle≤ 2.0%.
FR–5 = 1.0 x 0.75 x 0.062 in.
Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Voltage - 60 Volts
Drain Curreent - 115 mAmps
● ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V (BR)DSS
60
–
–
Vdc
IDSS
–
–
–
–
1.0
500
µAdc
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
–
–
1
µAdc
Gate–Body Leakage Current, Reverse
(VGS = – 20 Vdc)
IGSSR
–
–
-1
µAdc
V GS(th)
1.0
1.6
2
Vdc
ID(on)
500
–
–
mA
–
–
–
–
3.75
0.375
–
–
–
–
1.4
–
1.8
–
7.5
13.5
7.5
13.5
g FS
80
–
–
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
C iss
–
17
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
C oss
–
10
25
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
C rss
–
2.5
5.0
pF
t d(on)
–
7
20
ns
t d(off)
–
11
40
ns
V SD
–
–
–1.5
Vdc
IS
–
–
–115
mAdc
ISM
–
–
–800
mAdc
● OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 V dc)
TJ = 25 °C
TJ = 125 °C
● ON CHARACTERISTICS (Note 2.)
Gate ThresholdVoltage
(VDS = VGS, I D = 250 µAdc)
On–State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
V DS(on)
Static Drain–Source On–State Resistance
TC = 25°C
(VGS = 10 V, ID = 500 mAdc)
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
TC = 125°C
rDS(on)
Forward Transconductance
(VDS ≥ 2.0 VDS(on), I D = 200 mAdc)
Vdc
Ohms
● DYNAMIC CHARACTERISTICS
● SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V DD = 25 Vdc , I D 500 mAdc,
R G = 25 Ω, R L = 50 Ω, Vgen = 10 V)
● BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 115 mAdc, VGS = 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
2N7002
RATINGS AND CHARACTERISTIC CURVES
Switching Waveforms and Test Circuit
VDD
10V
90%
INPUT
0V
10%
t(ON)
td(ON)
VDD
td(OFF)
tF
D.U.T.
10%
10%
OUTPUT
Rgen
t(OFF)
tr
RL
PULSE
GENERATOR
INPUT
OUTPUT
0V
90%
90%
°
°
°
°
Figure 1. Ohmic Region
°
Figure 3. Temperature versus Static
Drain–Source On–Resistance
Figure 2. Transfer Characteristics
°
Figure 4. Temperature versus Gate
Threshold Voltage